Panasonic 2SD1260A, 2SD1260 Datasheet

Po wer Transistors

B

E

C

2SD1260, 2SD1260A

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB937 and 2SB937A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1260
2SD1260A
2SD1260

2SD1260A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Symbol

2SD1260
2SD1260A
2SD1260
2SD1260A

2SD1260
2SD1260A

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

FE

=25˚C)

C

Ratings

60
80
60
80

5
4
2

35

1.3

150

–55 to +150

=25˚C)

VCE = 60V, IE = 0
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

Internal Connection

10.0±0.310.5min.

10.0±0.3

4.4±0.5

2.0 1.5±0.1

2.0

1000
1000

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

60
80

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

+0

typ

0.5

–0.4

1.5

20

4
1

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Rank R Q P

h

1000 to 2500 2000 to 5000

FE2

4000 to 10000

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

max

1
1
2
2
2

10000

2.8

2.5

14.7±0.5

Unit

mA

mA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1260, 2SD1260A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

TC=–25˚C

1

100˚C

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(1)

(P

=1.3W)

C

(2)
(3)

V

CE(sat)—IC

IC/IB=250

25˚C

Collector current IC (A

)

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

0654132

IB=2.0mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

4

10

TC=100˚C

25˚C

3

10

–25˚C

2

10

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

0.2mA

VCE=4V

)

IC—V

10

8

)
A

(

C

6

4

Collector current I

2

0

03.20.8 2.41.6

)

Base to emitter voltage VBE (V

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

TC=100˚C

BE

25˚C

CB

–25˚C

IE=0
f=1MHz
T

VCE=4V

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD1260

2SD1260A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10