Panasonic 2SD1258 Datasheet

Po wer Transistors

2SD1258

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

200
150

6

2.5
1

0.1

40

1.3

150

–55 to +150

FE

Unit

V
V
V
A
A
A

W

˚C
˚C

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

*

hFE Rank classification

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz

min

150
500

Rank Q P

h

500 to 1200 800 to 2000

FE

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification.

typ25max

100
100

2000

1

Unit

µA
µA

V

V

MHz

1

Po wer Transistors 2SD1258

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 310.10.03 0.3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

BE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

IC/IB=25

–25˚C

)

CE

0.5

0.4

)
A

(

C

0.3

0.2

Collector current I

0.1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

TC=100˚C

25˚C

1000

–25˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

IB=400µA

350µA
300µA

250µA

200µA

150µA

100µA

50µA

C

VCE=4V

)

)
V

(

10

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 310.10.03 0.3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=4V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=25

–25˚C

)

=25˚C

)

Area of safe operation (ASO) R

100

30

)

10

A

(

C

I

CP

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

300ms

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10