Panasonic 2SD1253A, 2SD1253 Datasheet

Po wer Transistors

2SD1253, 2SD1253A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB930 and 2SB930A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1253
2SD1253A
2SD1253

2SD1253A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank R Q P

h

FE1

40 to 90 70 to 150 120 to 250

Symbol

2SD1253
2SD1253A
2SD1253
2SD1253A

2SD1253
2SD1253A

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

CE(sat)

=25˚C)

C

Ratings

60
80
60
80

5
8
4

40

1.3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V

10.0±0.310.5min.

10.0±0.3

4.4±0.5

2.0 1.5±0.1

2.0

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

60
80
40
15

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

+0

typ

0.4

1.2

0.5

–0.4

1.5

20

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

14.7±0.5

3.0

max

400
400
700
700

1

4.4±0.5

0 to 0.4

Unit

µA

µA

mA

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

250

2

1.5
MHz

V

V
V

µs
µs
µs

1

Po wer Transistors 2SD1253, 2SD1253A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

020164128

IB=150mA

T

100mA

80mA

60mA

40mA

30mA

20mA

10mA

5mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

=25˚C

C

VCE=4V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

VCE=4V

25˚C

TC=100˚C

–25˚C

fT—I

C

VCE=10V
f=1MHz
T

=25˚C

C

Collector current IC (A

)

)

Area of safe operation (ASO) R

100

30

)

I

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD1253

2SD1253A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10