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Po wer Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
Features
■
●
Wide area of safe operation (ASO)
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.0±0.310.5min.
2.0 1.5±0.1
8.5±0.2
6.0±0.5
1.5max.
0.8±0.1
3.4±0.3
Unit: mm
1.0±0.1
1.1max.
0.5max.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1251
2SD1251A
2SD1251
2SD1251A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1251
2SD1251A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*1
h
Rank classification
FE2
CBO
CEO
EBO
C
Symbol
I
CBO
I
EBO
V
CEO(sus)
h
FE1
*1
h
FE2
V
BE
V
CE(sat)
f
T
=25˚C)
C
Ratings
60
80
60
80
8
6
4
1
30
1.3
150
–55 to +150
=25˚C)
*2
VCB = 20V, IE = 0
VEB = 8V, IC = 0
IC = 0.2A, L = 25mH
VCE = 3V, IC = 0.1A
VCE = 3V, IC = 1A
VCE = 3V, IC = 1A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.2A, f = 0.5MHz
Rank Q P O
h
FE2
30 to 60 50 to 100 80 to 160
Note: Ordering can be made by the common rank (OP rank h
Unit
V
V
V
A
10.0±0.3
A
A
2.0
4.4±0.5
W
˚C
˚C
Conditions
*2
V
50/60Hz mercury relay
FE2
Test circuit
CEO(sus)
L 25mH
120Ω
6V
1Ω
15V
= 50 to 160) in the rank classification.
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
123
min
60
80
40
30
I
C
X
Y
G
2.54±0.3
–0.4
+0
1.5
0.8±0.1
2.54±0.3
typ1max
(A)
0.2
0.1
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
4.4±0.5
0 to 0.4
Unit
30
µA
1
mA
V
160
1.2
1
V
V
MHz
60/80 V
14.7±0.5
(V)
CE
1
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Po wer Transistors 2SD1251, 2SD1251A
PC—Ta IC—V
50
)
W
(
40
C
(1)
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
30
V
(
10
CE(sat)
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.03 0.1 0.3 1 3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
IC/IB=5
T
TC=100˚C
25˚C
Collector current IC (A
=25˚C
C
–25˚C
)
)
CE
2.4
2.0
)
A
(
1..6
C
1.2
0.8
IB=35mA
Collector current I
0.4
0
012108264
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
25˚C
300
–25˚C
100
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
=25˚C
T
C
30mA
25mA
20mA
15mA
10mA
5mA
VCE=3V
)
IC—V
3.2
2.8
TC=100˚C
)
2.4
A
(
C
2.0
1.6
1.2
0.8
Collector current I
0.4
0
02.42.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
25˚C
–25˚C
BE
CB
V
CE
IE=0
f=1MHz
T
=25˚C
C
=3V
)
)
Area of safe operation (ASO) R
100
30
)
10
A
I
(
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
10ms
300ms
Non repetitive pulse
=25˚C
T
C
t=5ms
2SD1251
2SD1251A
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10