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Po wer Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification
For TV vartical deflection output
Complementary to 2SB928 and 2SB928A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1250
2SD1250A
2SD1250
2SD1250A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
200
200
150
180
6
3
2
30
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
14.7±0.5
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1250
2SD1250A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
Rank classification
FE1
Rank Q P
h
FE1
60 to 140 100 to 240
C
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 500µA, IE = 0
IC = 5mA, IB = 0
IE = 500µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 0.5A, f = 1MHz
min
200
150
180
6
60
50
typ20max
50
50
240
1
1
Unit
µA
µA
V
V
V
V
V
MHz
1
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Po wer Transistors 2SD1250, 2SD1250A
PC—Ta IC—V
50
)
W
(
40
C
(1)
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 10.03 0.3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
TC=100˚C
25˚C
Collector current IC (A
)
IC/IB=10
–25˚C
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=7mA
6mA
5mA
4mA
3mA
2mA
Collector current I
0.2
0
02420164128
1mA
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
300
100
Forward current transfer ratio h
TC=100˚C
25˚C
–25˚C
30
10
3
1
0.01 0.1 1 100.03 0.3 3
VCE=10V
Collector current IC (A
T
=25˚C
C
IC—V
BE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
TC=100˚C
25˚C
–25˚C
Collector current I
0.2
0
01.21.00.80.2 0.60.4
)
)
Base to emitter voltage VBE (V
fT—I
C
1000
300
)
MHz
100
(
T
30
10
3
1
Transition frequency f
0.3
0.1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
VCE=10V
f=1MHz
T
=25˚C
C
)
)
Area of safe operation (ASO) R
10
I
CP
3
I
C
)
1
A
(
C
0.3
0.1
0.03
0.01
Collector current I
0.003
0.001
1 10 100 10003 30 300
Non repetitive pulse
T
C
5ms
1ms
1s
=25˚C
t=0.5ms
2SD1250
Collector to emitter voltage VCE (V
2SD1250A
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10