Panasonic 2SD1250A, 2SD1250 Datasheet

Po wer Transistors

2SD1250, 2SD1250A

Silicon NPN triple diffusion planar type

For power amplification
For TV vartical deflection output
Complementary to 2SB928 and 2SB928A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1250
2SD1250A
2SD1250

2SD1250A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

200
200
150
180

6
3
2

30

1.3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage

2SD1250
2SD1250A

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

*

h

Rank classification

FE1

Rank Q P

h

FE1

60 to 140 100 to 240

C

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 500µA, IE = 0

IC = 5mA, IB = 0

IE = 500µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 0.5A, f = 1MHz

min

200
150
180

6
60
50

typ20max

50
50

240

1
1

Unit

µA
µA

V

V

V

V
V

MHz

1

Po wer Transistors 2SD1250, 2SD1250A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 10.03 0.3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=7mA
6mA

5mA

4mA

3mA

2mA

Collector current I

0.2

0

02420164128

1mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

100

Forward current transfer ratio h

TC=100˚C

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

T

=25˚C

C

IC—V

BE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

TC=100˚C

25˚C

–25˚C

Collector current I

0.2

0

01.21.00.80.2 0.60.4

)

)

Base to emitter voltage VBE (V

fT—I

C

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

VCE=10V
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

10

I

CP

3

I

C

)

1

A

(

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001
1 10 100 10003 30 300

Non repetitive pulse
T

C

5ms
1ms

1s

=25˚C

t=0.5ms

2SD1250

Collector to emitter voltage VCE (V

2SD1250A

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10