Panasonic 2SD1249A, 2SD1249 Datasheet

Po wer Transistors

2SD1249, 2SD1249A

Silicon NPN triple diffusion planar type

For low-freauency power amplification

Features

■

●

High collector to base voltage V

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

Electrical Characteristics (T

■

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank R Q P

h

FE1

2SD1249
2SD1249A
2SD1249
2SD1249A

TC=25°C
Ta=25°C

Parameter

2SD1249
2SD1249A
2SD1249
2SD1249A

2SD1249
2SD1249A

40 to 90 70 to 150 120 to 250

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CBO

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

Unit

350
400
250
300

5

1.5

0.75
35

1.3

150

V

V

V
A
A

W

˚C
˚C

Conditions

VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 10V, IC = 0.2A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

10.0±0.310.5min.

10.0±0.3

4.4±0.5

2.0 1.5±0.1

2.0

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

250
300

40
10

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

+0

typ

0.5

0.5

–0.4

1.5

30

2

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

14.7±0.5

3.0

max

1
1
1
1
1

4.4±0.5

0 to 0.4

Unit

mA

mA

mA

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

250

1.5
1

MHz

V

V
V

µs
µs
µs

1

Po wer Transistors 2SD1249, 2SD1249A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=14mA
12mA
10mA

8mA

6mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

Forward current transfer ratio h

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

T

4mA

2mA

=25˚C

C

IC—V

BE

4.0

3.2

)
A

(

C

2.4

1.6

Collector current I

0.8

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.001

)

25˚C

TC=100˚C

0.003

–25˚C

fT—I

C

0.01 0.1 1

0.03 0.3

Collector current IC (A

=10V

V

CE

VCE=10V
f=10MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

C

3

I

CP

1

I

C

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=10ms

300ms

2SD1249

Collector to emitter voltage VCE (V

1ms

2SD1249A

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10