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Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SD1211
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB987
Features
■
●
High collector to emitter voltage V
●
Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
120
120
5
1
0.5
1
150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Rank R S
h
FE1
130 ~ 220 185 ~ 330
Symbol
V
CEO
V
EBO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
120
5
130
50
typ
200
max
330
1
1.2
20
Unit
V
V
V
V
MHz
pF
1
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Transistor
2SD1211
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
Ta=–25˚C
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
C
IC/IB=10
25˚C
75˚C
)
V
25˚C
CE(sat)
Ta=75˚C
–25˚C
fT — I
— I
E
C
IC/IB=10
)
VCB=10V
Ta=25˚C
)
CE
200
160
)
mA
(
C
120
80
Collector current I
40
0
012108264
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
Ta=75˚C
25˚C
–25˚C
Collector current IC (A
Ta=25˚C
=1.0mA
I
B
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
C
=10
I
C/IB
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
–1 –3 –10 –30 –100
Emitter current IE (mA
Cob — V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
1 3 10 30 100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
10
3
I
)
CP
1
A
(
C
I
C
0.3
0.1
0.03
0.01
Collector current I
0.003
0.001
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
t=1s
Single pulse
Ta=25˚C
t=10ms
)