Panasonic 2SD1211 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SD1211

Silicon NPN epitaxial planer type

For low-frequency amplification
Complementary to 2SB987

Features

■

●

High collector to emitter voltage V

●

Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

120
120

5
1

0.5
1

150

Unit

V
V
V
A

A
W
˚C
˚C

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Rank R S

h

FE1

130 ~ 220 185 ~ 330

Symbol

V

CEO

V

EBO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Conditions

IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

120

5

130

50

typ

200

max

330

1

1.2

20

Unit

V
V

V
V

MHz

pF

1

Transistor

2SD1211

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

IC/IB=10

25˚C

75˚C

)

V

25˚C

CE(sat)

Ta=75˚C

–25˚C

fT — I

— I

E

C

IC/IB=10

)

VCB=10V
Ta=25˚C

)

CE

200

160

)

mA

(

C

120

80

Collector current I

40

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

Ta=25˚C

=1.0mA

I

B

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

C

=10

I

C/IB

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

Emitter current IE (mA

Cob — V

80

)
pF

70

(

ob

60

50

40

30

20

10

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

Area of safe operation (ASO)

10

3

I

)

CP

1

A

(

C

I

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

t=1s

Single pulse
Ta=25˚C

t=10ms

)