Panasonic 2SD1205A, 2SD1205 Datasheet

Transistor

2SD1205, 2SD1205A

Silicon NPN epitaxial planer type darlington

For low-frequency amplification

Features

■

●

Forward current transfer ratio hFE is designed high, which is ap­propriate to the driver circuit of motors and printer bammer: h
= 4000 to 2000.

●

A shunt resistor is omitted from the driver.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1205
2SD1205A
2SD1205

2SD1205A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*1

hFE Rank classification

Rank Q R

h

4000 ~ 10000 8000 ~ 20000

FE

Symbol

2SD1205
2SD1205A
2SD1205
2SD1205A

Ratings

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

30
60
25
50

5
750
500
400
150

–55 ~ +150

Symbol

I
I

V

V

V
h
V
V
f

CBO

EBO

FE

T

CBO

CEO

EBO

*1

CE(sat)

BE(sat)

VCB = 25V, IE = 0
VEB = 4V, IC = 0

IC = 100µA, IE = 0

IC = 1mA, IB = 0

IE = 100µA, IC = 0
VCE = 10V, IC = 500mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
VCB = 10V, IE = –50mA, f = 200MHz

FE

Unit

V

V

V
mA
mA

mW

˚C
˚C

Conditions

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

Internal Connection

B

min

30
60
25
50

5

*2

*2

*2

4000

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

≈200Ω

typ

max

100
100

20000

2.5

150

*2

Pulse measurement

C

E

3

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Unit

nA
nA

V

V

V

V
V

MHz

1

Transistor

2SD1205, 2SD1205A

PC — Ta V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE — I

C

5

10

FE

4

10

3

10

25˚C

Ta=75˚C

–25˚C

VCE=10V

— I

)

100

V

(

30

CE(sat)

10

3

25˚C

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

–25˚C

Collector current IC (A

Cob — V

8

)
pF

7

(

ob

6

5

4

CE(sat)

Ta=75˚C

CB

C

IC/IB=1000

IE=0
f=1MHz
Ta=25˚C

100

)
V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

)

V

— I

BE(sat)

3

Ta=–25˚C

1

0.01 0.1 1 100.03 0.3 3

C

IC/IB=1000

25˚C

75˚C

Collector current IC (A

)

2

10

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

3

2

1

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

2