ON Semiconductor TIP132NPN, TIP137PNP Technical data

现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎好!
Î
Î
Î
Î
TIP131, TIP132 (NPN), TIP137 (PNP)
Preferred Devices
Designed for general−purpose amplifier and low−speed switching
applications.
http://onsemi.com
Features
High DC Current Gain −
hFE= 2500 (Typ) @ I
= 4.0 Adc
C
Collector−Emitter Sustaining Voltage − @ 30 mAdc
V
CEO(sus)
= 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137
Low Collector−Emitter Saturation Voltage −
V
= 2.0 Vdc (Max) @ IC = 4.0 Adc
CE(sat)
= 3.0 Vdc (Max) @ IC = 6.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
MAXIMUM RATINGS
TIP132
Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
Peak
Base Current Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TA = 25_C Operating and Storage Junction,
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
TJ, T
stg
TIP131
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
ООООООООО
Thermal Resistance,
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Junction−to−Case
Junction−to−Ambient
Symbol
R
q
JC
Î
R
q
JA
ÎÎÎ
TIP137
80 80
65 to +150
100 100
5.0
8.0 12
300
70
2.0
Max
1.78
63.5
Unit
Vdc Vdc Vdc Adc
mAdc
W W
_C
Unit
_C/W
Î
_C/W
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 70 WATTS
MARKING DIAGRAM
4
TO−220AB
CASE 221A
1
2
3
TIP13x = Device Code x = 1, 2, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
STYLE 1
ORDERING INFORMATION
Device Package Shipping
TIP131 TO−220 TIP131G TO−220
TIP132 TO−220 50 Units/Rail TIP132G TO−220
TIP137 TO−220 50 Units/Rail TIP137G TO−220
(Pb−Free)
(Pb−Free)
(Pb−Free)
TIP13xG
AYWW
50 Units/Rail 50 Units/Rail
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1 Publication Order Number:
Preferred devices are recommended choices for future use
and best overall value.
TIP131/D
TIP131, TIP132 (NPN), TIP137 (PNP)
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
Î
PNP
TIP137
COLLECTOR
NPN TIP131 TIP132
BASE
8.0 k 120
BASE
8.0 k 120
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) TIP131
ОООООООООООООООООООО
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 40 Vdc, IB = 0) TIP131 (VCE = 50 Vdc, IB = 0) TIP132, TIP137
ОООООООООООООООООООО
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) TIP131
ОООООООООООООООООООО
(VCB = 100 Vdc, IE = 0) TIP132, TIP137
Emitter Cutoff Current
ОООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
(IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
ОООООООООООООООООООО
(IC = 4.0 Adc, IB = 16 mAdc) (IC = 6.0 Adc, IB = 30 mAdc)
ОООООООООООООООООООО
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
= 25_C unless otherwise noted)
C
Characteristic
TIP132, TIP137
COLLECTOR
EMITTER
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
ÎÎÎ
Min
80
Î
100
Î
Î
Î
Î
500
Î
1000
Î
Î
Î
Max
ÎÎ
ÎÎ
0.5
ÎÎ
0.5
0.2
ÎÎ
0.2
5.0
ÎÎ
ÎÎ
15000
ÎÎ
2.0
3.0
ÎÎ
2.5
ÎÎ
Unit
Vdc
Î
mAdc
Î
Î
mAdc
Î
mAdc
Î
Î
Vdc
Î
Î
Vdc
Î
http://onsemi.com
2
1.0
0.7
0.5
0.3
0.2
0.1
0.07
(NORMALIZED)
0.05
0.03
0.02
r(t), TRANSIENT THERMAL RESISTANCE
0.01
0.01
0.2
0.1
0.05
0.02
0.01
D = 0.5
0.02
TIP131, TIP132 (NPN), TIP137 (PNP)
T
T
C
A
80
4.0
60
3.0
T
C
40
2.0
T
20
1.0
, POWER DISSIPATION (WATTS)
D
P
0
0
0 20 40 60 80 100 120 160
Figure 2. Power Derating
SINGLE PULSE
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
A
T, TEMPERATURE (°C)
Z
= r(t) R
q
JC(t)
R
= 1.78°C/W MAX
q
JC
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T
− TC = P
J(pk)
t, TIME (ms)
140
P
q
JC
1
Z
q
JC(t)
(pk)
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
Figure 3. Thermal Response
http://onsemi.com
3
TIP131, TIP132 (NPN), TIP137 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
SEATING
−T−
PLANE
B
4
Q
123
F
T
A
U
C
S
H
K
Z
L
V
R J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your local Sales Representative.
TIP131/D
4
Loading...