ON Semiconductor TIP132NPN, TIP137PNP Technical data
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TIP131, TIP132 (NPN),
TIP137 (PNP)
Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
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Features
• High DC Current Gain −
hFE= 2500 (Typ) @ I
= 4.0 Adc
C
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
V
CEO(sus)
= 80 Vdc (Min) − TIP131
= 100 Vdc (Min) − TIP132, TIP137
• Low Collector−Emitter Saturation Voltage −
V
= 2.0 Vdc (Max) @ IC = 4.0 Adc
CE(sat)
= 3.0 Vdc (Max) @ IC = 6.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS
TIP132
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Base Current
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TA = 25_C
Operating and Storage Junction,
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
TJ, T
stg
TIP131
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
ООООООООО
Thermal Resistance,
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Junction−to−Case
Junction−to−Ambient
Symbol
R
q
JC
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R
q
JA
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TIP137
80
80
–65 to + 150
100
100
5.0
8.0
12
300
70
2.0
Max
1.78
63.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W
_C
Unit
_C/W
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_C/W
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 70 WATTS
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
1
2
3
TIP13x = Device Code
x = 1, 2, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
STYLE 1
ORDERING INFORMATION
Device Package Shipping
TIP131 TO−220
TIP131G TO−220
TIP132 TO−220 50 Units/Rail
TIP132G TO−220
TIP137 TO−220 50 Units/Rail
TIP137G TO−220
(Pb−Free)
(Pb−Free)
(Pb−Free)
TIP13xG
AYWW
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1 Publication Order Number:
Preferred devices are recommended choices for future use
and best overall value.
TIP131/D
TIP131, TIP132 (NPN), TIP137 (PNP)
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PNP
TIP137
COLLECTOR
NPN
TIP131
TIP132
BASE
≈ 8.0 k ≈ 120
BASE
≈ 8.0 k ≈ 120
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) TIP131
ОООООООООООООООООООО
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 40 Vdc, IB = 0) TIP131
(VCE = 50 Vdc, IB = 0) TIP132, TIP137
ОООООООООООООООООООО
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) TIP131
ОООООООООООООООООООО
(VCB = 100 Vdc, IE = 0) TIP132, TIP137
Emitter Cutoff Current
ОООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
(IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
ОООООООООООООООООООО
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 6.0 Adc, IB = 30 mAdc)
ОООООООООООООООООООО
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
= 25_C unless otherwise noted)
C
Characteristic
TIP132, TIP137
COLLECTOR
EMITTER
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
ÎÎÎ
Min
80
Î
100
Î
−
Î
−
−
Î
−
−
Î
500
Î
1000
Î
−
−
Î
−
Î
Max
−
ÎÎ
−
ÎÎ
0.5
ÎÎ
0.5
0.2
ÎÎ
0.2
5.0
ÎÎ
−
ÎÎ
15000
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2.0
3.0
ÎÎ
2.5
ÎÎ
Unit
Vdc
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mAdc
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mAdc
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mAdc
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−
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Vdc
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Vdc
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