TIP131, TIP132 (NPN), TIP137 (PNP)
Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general-purpose amplifier and low-speed switching applications.
Features
• High DC Current Gain -
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 80 Vdc (Min) - TIP131
= 100 Vdc (Min) - TIP132, TIP137
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• Pb-Free Packages are Available*
MAXIMUM RATINGS
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TIP132 |
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Rating |
Symbol |
TIP131 |
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TIP137 |
Unit |
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Collector-Emitter Voltage |
VCEO |
80 |
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100 |
Vdc |
Collector-Base Voltage |
VCB |
80 |
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100 |
Vdc |
Emitter-Base Voltage |
VEB |
5.0 |
Vdc |
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Collector Current - Continuous |
IC |
8.0 |
Adc |
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Peak |
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12 |
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Base Current |
IB |
300 |
mAdc |
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Total Power Dissipation @ TC = 25°C |
PD |
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70 |
W |
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Total Power Dissipation @ TA = 25°C |
PD |
2.0 |
W |
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Operating and Storage Junction, |
TJ, Tstg |
–65 to +150 |
°C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, |
RqJC |
1.78 |
°C/W |
Junction-to-Case |
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Thermal Resistance, |
RqJA |
63.5 |
°C/W |
Junction-to-Ambient |
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 70 WATTS
MARKING
DIAGRAM
4
TO-220AB |
TIP13xG |
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CASE 221A |
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AYWW |
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STYLE 1 |
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1
2
3
TIP13x = Device Code
x= 1, 2, or 7
A= Assembly Location
Y= Year
WW = Work Week
G= Pb-Free Package
ORDERING INFORMATION
Device |
Package |
Shipping |
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TIP131 |
TO-220 |
50 Units/Rail |
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TIP131G |
TO-220 |
50 Units/Rail |
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(Pb-Free) |
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TIP132 |
TO-220 |
50 Units/Rail |
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TIP132G |
TO-220 |
50 Units/Rail |
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(Pb-Free) |
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TIP137 |
TO-220 |
50 Units/Rail |
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TIP137G |
TO-220 |
50 Units/Rail |
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(Pb-Free) |
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Preferred devices are recommended choices for future use |
*For additional information on our Pb-Free strategy and soldering details, please |
and best overall value. |
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download the ON Semiconductor Soldering and Mounting Techniques |
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Reference Manual, SOLDERRM/D. |
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♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
November, 2007 - Rev. 2 |
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TIP131/D |
TIP131, TIP132 (NPN), TIP137 (PNP)
PNP |
COLLECTOR |
TIP137 |
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BASE |
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≈ 8.0 k |
≈ 120 |
NPN |
COLLECTOR |
TIP131 |
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TIP132 |
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BASE |
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≈ 8.0 k |
≈ 120 |
EMITTER |
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EMITTER |
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Figure 1. Darlington Circuit Schematic |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage (Note 1) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mAdc, IB = 0) |
TIP131 |
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80 |
- |
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TIP132, TIP137 |
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100 |
- |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 40 Vdc, IB = 0) |
TIP131 |
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- |
0.5 |
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(VCE = 50 Vdc, IB = 0) |
TIP132, TIP137 |
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- |
0.5 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 80 Vdc, IE = 0) |
TIP131 |
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- |
0.2 |
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(VCB = 100 Vdc, IE = 0) |
TIP132, TIP137 |
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- |
0.2 |
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Emitter Cutoff Current |
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IEBO |
- |
5.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (Note 1) |
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DC Current Gain |
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hFE |
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- |
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(IC = 1.0 Adc, VCE = 4.0 Vdc) |
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500 |
- |
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(IC = 4.0 Adc, VCE = 4.0 Vdc) |
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1000 |
15000 |
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Collector-Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 4.0 Adc, IB = 16 mAdc) |
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- |
2.0 |
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(IC = 6.0 Adc, IB = 30 mAdc) |
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- |
3.0 |
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Base-Emitter On Voltage |
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VBE(on) |
- |
2.5 |
Vdc |
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(IC = 4.0 Adc, VCE = 4.0 Vdc) |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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http://onsemi.com
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