ON Semiconductor TIP120, TIP121, TIP122, TIP125, TIP126 Service Manual

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)

Preferred Devices

Plastic Medium-Power
Complementary Silicon
Transistors

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Designed for general-purpose amplifier and low-speed switching

applications.

Features

•High DC Current Gain -

h

FE

= 2500 (Typ) @ IC
= 4.0 Adc

•Collector-Emitter Sustaining Voltage - @ 100 mAdc

V

CEO(sus)

= 60 Vdc (Min) - TIP120, TIP125
= 80 Vdc (Min) - TIP121, TIP126
= 100 Vdc (Min) - TIP122, TIP127

•Low Collector-Emitter Saturation Voltage -

V

= 2.0 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built-In Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80-100 VOLTS, 65 WATTS

MARKING
DIAGRAM

4

TO-220AB

CASE 221A

1

2

3

TIP12x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package

STYLE 1

TIP12xG

AYWW

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 7

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

TIP120/D

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

MAXIMUM RATINGS

TIP120,

TIP125

60

60

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Rating

Symbol

V

CEO

V

CB

V

EB

I

C

- Peak

Base Current

Total Power Dissipation @ TC = 25°C

I

B

P

D

Derate above 25°C

Total Power Dissipation @ TA = 25°C

P

D

Derate above 25°C

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction, Temperature Range

TJ, T

E

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

Symbol

R

q

JC

R

q

JA

TIP121,

TIP126

80

80

5.0

5.0

8.0

120

65

0.52

2.0

0.016

50

–65 to +150

Max

1.92

62.5

TIP122,

TIP127

100

100

Unit

Vdc

Vdc

Vdc

Adc

mAdc

W

W/°C

W

W/°C

mJ

°C

Unit

°C/W

°C/W

ORDERING INFORMATION

Device Package Shipping

TIP120 TO-220 50 Units / Rail

TIP120G TO-220

(Pb-Free)

TIP121 TO-220 50 Units / Rail

TIP121G TO-220

(Pb-Free)

TIP122 TO-220 50 Units / Rail

TIP122G TO-220

(Pb-Free)

TIP125 TO-220 50 Units / Rail

TIP125G TO-220

(Pb-Free)

TIP126 TO-220 50 Units / Rail

TIP126G TO-220

(Pb-Free)

TIP127 TO-220 50 Units / Rail

TIP127G TO-220

(Pb-Free)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

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2

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 2)

= 100 mAdc, IB = 0) TIP120, TIP125

(I

C

TIP121, TIP126
TIP122, TIP127

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP120, TIP125
(VCE = 40 Vdc, IB = 0) TIP121, TIP126
(VCE = 50 Vdc, IB = 0) TIP122, TIP127

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP120, TIP125
(VCB = 80 Vdc, IE = 0) TIP121, TIP126
(VCB = 100 Vdc, IE = 0) TIP122, TIP127

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)

Base-Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

C

ob

Min

60
80

100

-

-

-

-

-

-

-

1000
1000

-

-

-

4.0

-

-

Max

-

-

-

0.5

0.5

0.5

0.2

0.2

0.2

2.0

-

-

2.0

4.0

2.5

-

300
200

Unit

Vdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

-

pF

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

T

C

A

80

60

T

C

40

T

20

0

0

0 20 40 60 80 100 120 160

A

T, TEMPERATURE (°C)

Figure 1. Power Derating

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3

140

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

MUST BE FAST RECOVERY TYPE, eg:

1

1N5825 USED ABOVE I

≈ 100 mA

B

MSD6100 USED BELOW IB ≈ 100 mA

V

2

approx

+8.0 V

0

V

1

approx

-12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

R

B

D

1

51

for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.

≈ 8.0 k

+4.0 V

Figure 2. Switching Times Test Circuit

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

(NORMALIZED)

0.05

0.02

0.03

0.02

0.01

0.01

0.01
SINGLE PULSE

0.02

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

r(t), TRANSIENT THERMAL RESISTANCE

TUT

≈ 120

R

V

-30 V

C

5.0

CC

3.0

t

s

PNP
NPN

2.0

SCOPE

1.0

t

f

0.7

0.5

t, TIME (s)μ

0.3

0.2
VCC = 30 V

t

r

IC/IB = 250
IB1 = I

0.1

0.07

0.05

0.1

B2

TJ = 25°C

td @ V

BE(off)

= 0

0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

5.0 7.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

P

Z

= r(t) R

q

JC(t)

R

= 1.92°C/W MAX

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

t, TIME (ms)

q

JC

1

Z

q

JC(t)

(pk)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 4. Thermal Response

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4

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

20

10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.02

1.0

TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V

CEO

2.0 5.0 20 50 100

3.0 7.0 30 70

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

500 ms

dc

1ms

TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

10

Figure 5. Active-Region Safe Operating Area

10,000

5000
3000

2000

1000

500
300

200

100

, SMALL-SIGNAL CURRENT GAIN

fe

h

50
30

20

10

1.0

TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc

PNP
NPN

20 50 100 200 10002.0 5.0 10

f, FREQUENCY (kHz)

5ms

100 ms

500

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - V
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150°C. T

may be calculated from the data in Figure 4.

J(pk)

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown

300

TJ = 25°C

200

C

100

70

C, CAPACITANCE (pF)

50

30

0.1

C

ib

PNP
NPN

2.0 5.0 10 20 100500.2 0.5 1.0

VR, REVERSE VOLTAGE (VOLTS)

ob

CE

Figure 6. Small-Signal Current Gain

Figure 7. Capacitance

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5

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

NPN
TIP120, TIP121, TIP122

20,000

10,000

5000

TJ = 150°C

3000
2000

1000

, DC CURRENT GAIN

FE

h

500

300
200

0.1

0.2 0.3 0.5 1.0 2.0 10

IC = 2.0 A

3.0

2.6

25°C

-55°C

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A

6.0 A

20,000

VCE = 4.0 V

10,000

, DC CURRENT GAIN

h

5.0 7.0

Figure 8. DC Current Gain

TJ = 25°C

PNP
TIP125, TIP126, TIP127

7000
5000

TJ = 150°C

FE

3000

2000

1000

700

500

300

200

3.0

2.6

0.1

25°C

-55°C

0.2 0.3 0.5 1.0 2.0 10

IC = 2.0 A

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A 6.0 A

VCE = 4.0 V

5.0 7.0

TJ = 25°C

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

2.2

1.8

1.4

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.3

0.5 1.0 2.0 10 30

0.7 5.0

IB, BASE CURRENT (mA)

3.0 7.0

Figure 9. Collector Saturation Region

TJ = 25°C

V

@ IC/IB = 250

BE(sat)

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

CE(sat)

0.1

0.2 0.3 0.5 1.0 2.0 5.0 10

IC, COLLECTOR CURRENT (AMP)

0.7 7.0

3.0

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

20

1.0

0.3

3.0

TJ = 25°C

2.5

2.0

1.5

VBE @ VCE = 4.0 V

V, VOLTAGE (VOLTS)

V

1.0

0.5

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

Figure 10. “On” Voltages

0.5 1.0 2.0 10 30

0.7 5.0 20

IB, BASE CURRENT (mA)

@ IC/IB = 250

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMP)

3.0 7.0

@ IC/IB = 250

3.00.7 7.0

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6

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

l

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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TIP120/D

7