ON Semiconductor TIP122 NPN, TIP127 PNP Technical data

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Preferred Devices

Plastic Medium−Power Complementary Silicon Transistors

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Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

h

FE

= 2500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc

V

CEO(sus)

= 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127

• Low Collector−Emitter Saturation Voltage −

V

= 2.0 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

MARKING DIAGRAM

4

TO−220AB

CASE 221A

1

2

3

TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

STYLE 1

TIP12xG

AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

September, 2005 − Rev. 6

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

TIP120/D

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Î

MAXIMUM RATINGS

TIP120,

Rating

Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous

ОООООООООООООООО

− Peak Base Current Total Power Dissipation @ TC = 25_C

Derate above 25_C

ОООООООООООООООО

Total Power Dissipation @ TA = 25_C

Symbol

V

CEO

V

CB

V

EB

I

C

ÎÎÎ

I

B

P

ÎÎÎ

D

P

D

TIP125

60 60

ООООООО

Derate above 25_C Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction, Temperature Range

TJ, T

E

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

Symbol

R

q

JC

R

q

JA

TIP121,

TIP126

80 80

5.0

8.0

120

65

0.52

2.0

0.016 50

–65 to +150

Max

1.92

62.5

TIP122,

TIP127

100 100

Unit

Vdc Vdc Vdc Adc

ÎÎ

mAdc

W

W/_C

ÎÎ

W

W/_C

mJ _C

Unit

_C/W _C/W

ORDERING INFORMATION

Device Package Shipping

TIP120 TO−220 50 Units / Rail TIP120G TO−220

(Pb−Free) TIP121 TO−220 50 Units / Rail TIP121G TO−220

(Pb−Free) TIP122 TO−220 50 Units / Rail TIP122G TO−220

(Pb−Free) TIP125 TO−220 50 Units / Rail TIP125G TO−220

(Pb−Free) TIP126 TO−220 50 Units / Rail TIP126G TO−220

(Pb−Free) TIP127 TO−220 50 Units / Rail TIP127G TO−220

(Pb−Free)

50 Units / Rail

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2

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

= 100 mAdc, IB = 0) TIP120, TIP125

(I

C

ООООООООООООООООООО

TIP121, TIP126 TIP122, TIP127

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP120, TIP125

ООООООООООООООООООО

(VCE = 40 Vdc, IB = 0) TIP121, TIP126

ООООООООООООООООООО

(VCE = 50 Vdc, IB = 0) TIP122, TIP127

Collector Cutoff Current

ООООООООООООООООООО

(VCB = 60 Vdc, IE = 0) TIP120, TIP125 (VCB = 80 Vdc, IE = 0) TIP121, TIP126

ООООООООООООООООООО

(VCB = 100 Vdc, IE = 0) TIP122, TIP127

Emitter Cutoff Current

ООООООООООООООООООО

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.5 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООО

(IC = 3.0 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

ООООООООООООООООООО

(IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)

ООООООООООООООООООО

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc)

ООООООООООООООООООО

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

ООООООООООООООООООО

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

ООООООООООООООООООО

TIP120, TIP121, TIP122

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

h

fe

ÎÎÎ

C

ob

ÎÎÎ

Min

60

ÎÎ

80

ÎÎ

100

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

1000

ÎÎ

1000

ÎÎ

−

ÎÎ

−

ÎÎ

4.0

ÎÎ

−

ÎÎ

Max

−

Î

−

Î

−

Î

0.5

Î

0.5

Î

0.2

Î

0.2

2.0

Î

−

Î

−

Î

2.0

4.0

Î

2.5

Î

−

Î

300 200

Î

Unit

Vdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

mAdc

ÎÎ

−

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

−

ÎÎ

pF

ÎÎ

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

C

A

80

60

T

C

40

T

20

0

0 20 40 60 80 100 120 160

A

T, TEMPERATURE (°C)

Figure 1. Power Derating

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