TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
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Designed for general-purpose amplifier and low-speed switching
applications.
Features
•High DC Current Gain -
h
FE
= 2500 (Typ) @ IC
= 4.0 Adc
•Collector-Emitter Sustaining Voltage - @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) - TIP120, TIP125
= 80 Vdc (Min) - TIP121, TIP126
= 100 Vdc (Min) - TIP122, TIP127
•Low Collector-Emitter Saturation Voltage -
V
= 2.0 Vdc (Max) @ IC = 3.0 Adc
CE(sat)
= 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built-In Base-Emitter Shunt Resistors
•Pb-Free Packages are Available*
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VOLTS, 65 WATTS
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
1
2
3
TIP12x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
STYLE 1
TIP12xG
AYWW
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 7
1 Publication Order Number:
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
MAXIMUM RATINGS
TIP120,
TIP125
60
60
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
- Peak
Base Current
Total Power Dissipation @ TC = 25°C
I
B
P
D
Derate above 25°C
Total Power Dissipation @ TA = 25°C
P
D
Derate above 25°C
Unclamped Inductive Load Energy (Note 1)
Operating and Storage Junction, Temperature Range
TJ, T
E
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
Symbol
R
q
JC
R
q
JA
TIP121,
TIP126
80
80
5.0
5.0
8.0
120
65
0.52
2.0
0.016
50
–65 to +150
Max
1.92
62.5
TIP122,
TIP127
100
100
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/°C
W
W/°C
mJ
°C
Unit
°C/W
°C/W
ORDERING INFORMATION
Device Package Shipping
TIP120 TO-220 50 Units / Rail
TIP120G TO-220
(Pb-Free)
TIP121 TO-220 50 Units / Rail
TIP121G TO-220
(Pb-Free)
TIP122 TO-220 50 Units / Rail
TIP122G TO-220
(Pb-Free)
TIP125 TO-220 50 Units / Rail
TIP125G TO-220
(Pb-Free)
TIP126 TO-220 50 Units / Rail
TIP126G TO-220
(Pb-Free)
TIP127 TO-220 50 Units / Rail
TIP127G TO-220
(Pb-Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
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2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
= 100 mAdc, IB = 0) TIP120, TIP125
(I
C
TIP121, TIP126
TIP122, TIP127
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP120, TIP125
(VCE = 40 Vdc, IB = 0) TIP121, TIP126
(VCE = 50 Vdc, IB = 0) TIP122, TIP127
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP120, TIP125
(VCB = 80 Vdc, IE = 0) TIP121, TIP126
(VCB = 100 Vdc, IE = 0) TIP122, TIP127
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
Base-Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
h
fe
C
ob
Min
60
80
100
-
-
-
-
-
-
-
1000
1000
-
-
-
4.0
-
-
Max
-
-
-
0.5
0.5
0.5
0.2
0.2
0.2
2.0
-
-
2.0
4.0
2.5
-
300
200
Unit
Vdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
-
pF
4.0
3.0
2.0
1.0
, POWER DISSIPATION (WATTS)
D
P
T
T
C
A
80
60
T
C
40
T
20
0
0
0 20 40 60 80 100 120 160
A
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
140