ON Semiconductor TIP110, TIP111, TIP112, TIP115, TIP116 Service Manual

TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)

TIP111, TIP112, TIP116, and TIP117 are Preferred Devices

Plastic Medium-Power
Complementary Silicon
Transistors

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Designed for general-purpose amplifier and low-speed switching

applications.

Features

•High DC Current Gain -

hFE= 2500 (Typ) @ IC

= 1.0 Adc

•Collector-Emitter Sustaining Voltage - @ 30 mAdc

V

CEO(sus)

= 60 Vdc (Min) - TIP110, TIP115
= 80 Vdc (Min) - TIP111, TIP116
= 100 Vdc (Min) - TIP112, TIP117

•Low Collector-Emitter Saturation Voltage -

V

= 2.5 Vdc (Max) @ IC

CE(sat)

= 2.0 Adc

•Monolithic Construction with Built-in Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80-100 VOLTS, 50 WATTS

MARKING
DIAGRAM

4

TO-220AB

CASE 221A

1

2

3

TIP11x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package

STYLE 1

TIP11xG

AYWW

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 6

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

TIP110/D

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

MAXIMUM RATINGS

TIP110,

TIP115

60

60

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Rating

Symbol

V

CEO

V

CB

V

EB

I

C

- Peak

Base Current

Total Power Dissipation @ TC = 25°C

I

B

P

D

Derate above 25°C

Total Power Dissipation @ TA = 25°C

P

D

Derate above 25°C

Unclamped Inductive Load Energy - Figure 13

Operating and Storage Junction

TJ, T

E

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

Symbol

R

q

JC

R

q

JA

TIP111,

TIP116

80

80

5.0

2.0

4.0

50

50

0.4

2.0

0.016

25

–65 to +150

Max

2.5

62.5

TIP112,

TIP117

100

100

Unit

Vdc

Vdc

Vdc

Adc

mAdc

W

W/°C

W

W/°C

mJ

°C

Unit

°C/W

°C/W

ORDERING INFORMATION

Device Package Shipping

TIP110 TO-220 50 Units / Rail

TIP110G TO-220

(Pb-Free)

TIP111 TO-220 50 Units / Rail

TIP111G TO-220

(Pb-Free)

TIP112 TO-220 50 Units / Rail

TIP112G TO-220

(Pb-Free)

TIP115 TO-220 50 Units / Rail

TIP115G TO-220

(Pb-Free)

TIP116 TO-220 50 Units / Rail

TIP116G TO-220

(Pb-Free)

TIP117 TO-220 50 Units / Rail

TIP117G TO-220

(Pb-Free)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

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2

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 1)

= 30 mAdc, IB = 0) TIP110, TIP115

(I

C

TIP111, TIP116
TIP112, TIP117

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115
(VCE = 40 Vdc, IB = 0) TIP111, TIP116
(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115
(VCB = 80 Vdc, IE = 0) TIP111, TIP116
(VCB = 100 Vdc, IE = 0) TIP112, TIP117

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)

Collector-Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

Base-Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

C

ob

Min

60
80

100

-

-

-

-

-

-

-

1000

500

-

-

25

-

-

Max

-

-

-

2.0

2.0

2.0

1.0

1.0

1.0

2.0

-

-

2.5

2.8

-

200
100

Unit

Vdc

mAdc

mAdc

mAdc

-

Vdc

Vdc

-

pF

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

T

C

A

60

40

T

C

20

T

A

0

0

0 20 40 60 80 100 120 160

T, TEMPERATURE (°C)

Figure 1. Power Derating

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3

140

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

, MUST BE FAST RECOVERY TYPE, eg:

1

1N5825 USED ABOVE I

≈ 100 mA

B

MSD6100 USED BELOW IB ≈ 100 mA

V

2

approx

+8.0 V

0

V

1

approx

-12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

R

B

D

1

51

for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.

For NPN test circuit, reverse diode,
polarities and input pulses.

≈ 8.0 k

+4.0 V

Figure 2. Switching Times Test Circuit

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

(NORMALIZED)

0.07

0.05

0.03

r(t), TRANSIENT THERMAL RESISTANCE

0.02

0.01

0.01

0.02

0.01

0.2

0.1

0.05

0.02

SINGLE PULSE

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

TUT

≈ 60

R

V

-30 V

C

4.0

CC

t

s

VCC = 30 V
IC/IB = 250

IB1 = I

B2

TJ = 25°C

2.0

SCOPE

t

1.0

0.8

t, TIME (s)μ

0.6

f

t

r

0.4

PNP

0.2

0.04

0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

NPN

td @ V

BE(off)

= 0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

P

Z

= r(t) R

q

JC(t)

R

= 2.5°C/W MAX

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

t, TIME (ms)

q

JC

1

Z

q

JC(t)

(pk)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 4. Thermal Response

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4

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

ACTIVE-REGION SAFE-OPERATING AREA

10

4.0

2.0

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW
RATED V

CEO

1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5ms

TIP115
TIP116
TIP117

10 60 80 100

1ms

dc

40

Figure 5. TIP115, 116, 117

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figures 5 and 6 is based on T

J(pk)

= 150°C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
< 150°C. T

may be calculated from the data in Figure 4.

J(pk)

J(pk)

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

10

4.0

2.0

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

200

100

C, CAPACITANCE (pF)

TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW
RATED V

CEO

1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

70

50

30

20

10

0.04

dc

TIP110
TIP111
TIP112

10 80 100

Figure 6. TIP110, 111, 112

C

ib

PNP
NPN

0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

VR, REVERSE VOLTAGE (VOLTS)

60

TC = 25°C

C

ob

6.0 10 20

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5

Figure 7. Capacitance

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

6.0 k

4.0 k

3.0 k

2.0 k

1.0 k

, DC CURRENT GAIN

800

FE

h

600

400
300

NPN

TIP110, 111, 112

TJ = 125°C

25°C

-55°C

0.04

0.06 0.1 0.2 0.6 1.0 4.0

IC, COLLECTOR CURRENT (AMP)

3.4

IC =

3.0

0.5 A

2.6

1.0 A

2.0 A

0.4

4.0 A

6.0 k

VCE = 3.0 V

2.0

4.0 k

3.0 k

2.0 k

1.0 k

, DC CURRENT GAIN

800

FE

h

600

400
300

0.04

Figure 8. DC Current Gain

3.4

TJ = 25°C

3.0

2.6

PNP

TIP115, 116, 117

TJ = 125°C

25°C

-55°C

0.06 0.1 0.2 0.6 1.0 4.0

IC, COLLECTOR CURRENT (AMP)

IC =

0.5 A

1.0 A

0.4

2.0 A 4.0 A

VCE = 3.0 V

2.0

TJ = 25°C

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

V, VOLTAGE (VOLTS)

CE

2.2

1.8

1.4

1.0

0.6

0.1

0.2 1.0 2.0 20 100

0.5 5.0
IB, BASE CURRENT (mA)

10

Figure 9. Collector Saturation Region

2.2

TJ = 25°C

1.8

V

@ IC/IB = 250

BE(sat)

1.4

1.0

0.6

V

CE(sat)

@ IC/IB = 250

VBE @ VCE = 3.0 V

2.2

1.8

1.4

1.0

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

0.6

50

V

V, VOLTAGE (VOLTS)

0.1

0.2 1.0 2.0 20 100

2.2

1.8

1.4

1.0

0.6

TJ = 25°C

V

CE(sat)

0.5 5.0 50
IB, BASE CURRENT (mA)

V

@ IC/IB = 250

BE(sat)

@ IC/IB = 250

10

VBE @ VCE = 3.0 V

0.2

0.04

0.06 0.1 0.2 0.6 1.0 2.0 4.0

IC, COLLECTOR CURRENT (AMP)

0.4

0.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

Figure 10. “On” Voltages

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6

0.4

IC, COLLECTOR CURRENT (AMP)

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

NPN

TIP110, 111, 112

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+0.8

-0.8

-1.6

-2.4

-3.2

-4.0

V

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

0

25°C to 150°C

*qVC for V

CE(sat)

-55°C to 25°C

25°C to 150°C

qVC for V

BE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

0.1

-55°C to 25°C

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

5

10

REVERSE FORWARD

4

10

3

10

10

10

, COLLECTOR CURRENT (A)μI

C

10

10

VCE = 30 V

2

TJ = 150°C

1

0

100°C

25°C

-1

-0.6

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

+1.4

PNP

TIP115, 116, 117

+0.8

*APPLIES FOR IC/IB ≤ hFE/3

0

-0.8

-1.6

*qVC for V

CE(sat)

-2.4

-3.2

qVC for V

-4.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

-4.8

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

BE

0.1

IC, COLLECTOR CURRENT (AMP)

5

10

REVERSE FORWARD

4

10

3

10

10

10

, COLLECTOR CURRENT (A)μI

C

10

10

VCE = 30 V

2

TJ = 150°C

1

100°C

0

-1

-0.6

25°C

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

+1.4

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

INPUT

MJE254

50 W

50 W

V

= 10 V

BB1

Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.

R

BB1

2kW

R

BB2

100 W

+

V

= 0

-

BB2

Figure 12. Collector Cut‐Off Region

VCE MONITOR

100 mH

TUT

+

VCC = 20 V

-

RS =

0.1 W

I

C

MONITOR

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

0.71 A

V

CE(sat)

0 V

-5 V

0 V

V

CER

20 V

Figure 13. Inductive Load Switching

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7

tw ≈ 3.5 ms (SEE NOTE A)

100 ms

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

l

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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TIP110/D

8