ON Semiconductor TIP100, TIP101, TIP102, TIP105, TIP106 Service Manual

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

TIP101, TIP102, TIP106 and TIP107 are Preferred Devices

Plastic Medium-Power Complementary Silicon Transistors

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Designed for general-purpose amplifier and low-speed switching

applications.

Features

•High DC Current Gain -

h

FE

= 2500 (Typ) @ IC = 4.0 Adc

•Collector-Emitter Sustaining Voltage - @ 30 mAdc

V

CEO(sus)

= 60 Vdc (Min) - TIP100, TIP105 = 80 Vdc (Min) - TIP101, TIP106 = 100 Vdc (Min) - TIP102, TIP107

•Low Collector-Emitter Saturation Voltage -

V

= 2.0 Vdc (Max) @ IC

CE(sat)

= 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc

•Monolithic Construction with Built-in Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80-100 VOLTS, 80 WATTS

MARKING DIAGRAM

4

TO-220AB

CASE 221A

1

2

3

TIP10x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

STYLE 1

TIP10xG

AYWW

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 12

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

TIP100/D

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

MAXIMUM RATINGS

TIP100,

TIP105

60

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Rating

Symbol

V

CEO

V

CB

V

EB

I

C

- Peak

Base Current

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Unclamped Inductive Load Energy (1)

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

I

P

TJ, T

B

D

E

D

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

Symbol

R

q

JC

R

q

JA

TIP101,

TIP106

80

5.0

8.0 15

1.0

80

0.64

30

2.0

0.016

–65 to +150

Max

1.56

62.5

TIP102,

TIP107

100

Unit

Vdc

Adc

W

W/°C

mJ

W

W/°C

°C

Unit

°C/W

ORDERING INFORMATION

Device Package Shipping

TIP100 TO-220 50 Units / Rail

TIP100G TO-220

(Pb-Free)

TIP101 TO-220 50 Units / Rail

TIP101G TO-220

(Pb-Free)

TIP102 TO-220 50 Units / Rail

TIP102G TO-220

(Pb-Free)

TIP105 TO-220 50 Units / Rail

TIP105G TO-220

(Pb-Free)

TIP106 TO-220 50 Units / Rail

TIP106G TO-220

(Pb-Free)

TIP107 TO-220 50 Units / Rail

TIP107G TO-220

(Pb-Free)

50 Units / Rail

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2

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

ÎÎÎ

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)

= 30 mAdc, IB = 0) TIP100, TIP105

(I

C

TIP101, TIP106 TIP102, TIP107

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP100, TIP105 (VCE = 40 Vdc, IB = 0) TIP101, TIP106 (VCE = 50 Vdc, IB = 0) TIP102, TIP107

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP100, TIP105 (VCB = 80 Vdc, IE = 0) TIP101, TIP106 (VCB = 100 Vdc, IE = 0) TIP102, TIP107

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc)

Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

C

ob

Min

60 80

100

-

1000

200

-

4.0

-

Max

-

50 50 50

8.0

20,000

-

2.0

2.5

2.8

-

300 200

Unit

Vdc

mAdc

-

Vdc

-

pF

T

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

C

A

80

60

T

40

20

0

C

T

A

0 20 40 60 80 100 120 160

T, TEMPERATURE (°C)

Figure 1. Power Derating

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3

140

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA

V

2

approx

+8.0 V

0

V

1

approx

-12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

R

B

D

1

51

for td and tr, D1 is disconnected and V2 = 0

For NPN test circuit reverse all polarities.

≈ 8.0 k

+4.0 V

Figure 2. Switching Times Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.2

0.1

0.05

0.02

0.01

0.02

SINGLE PULSE

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

TUT

≈ 120

R

V

-30 V

C

5.0

CC

3.0

t

s

PNP NPN

2.0

SCOPE

1.0

t

f

0.7

0.5

t, TIME (s)μ

0.3 t

0.2

VCC = 30 V

r

IC/IB = 250

0.1

IB1 = I

0.07

0.05

B2

TJ = 25°C

0.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

td @ V

BE(off)

= 0 V

5.0 7.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

P

Z

= r(t) R

q

JC(t)

R

= 1.56°C/W MAX

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

t, TIME (ms)

q

JC

1

Z

q

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

20

5.0

2.0

1.0

0.5

10

100 ms

TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C

1ms

5ms

d‐

c

SECOND BREAKDOWN LIMITED

0.2

, COLLECTOR CURRENT (mA)

0.1

C

I

0.05

CURVES APPLY BELOW RATED V

TIP100, TIP105 TIP101, TIP106

CEO

TIP102, TIP107

0.02

1.0

2.0 5.0 20 50 100

10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active-Region Safe Operating Area

Figure 4. Thermal Response

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - V limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T < 150°C. T

J(pk)

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown

CE

= 150°C; TC is

J(pk)

may be calculated from the data in Figure 4.

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4

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

10,000

5000 3000

2000

1000

500 300

200

100

, SMALL-SIGNAL CURRENT GAIN

fe

h

300

200

50 30

20

10

1.0

PNP NPN

20 50 100 200 10002.0 5.0 10

f, FREQUENCY (kHz)

Figure 6. Small-Signal Current Gain

TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc

500

TJ = 25°C

100

70

C, CAPACITANCE (pF)

50

30

0.1

C

ob

C

ib

PNP NPN

2.0 5.0 10 20 100500.2 0.5 1.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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5

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

NPN TIP100, TIP101, TIP102

20,000

10,000

0.1

TJ = 150°C

0.2 0.3 0.5 1.0 2.0 10

5000

3000 2000

1000

, DC CURRENT GAIN

FE

h

500

300 200

3.0

2.6

25°C

-55°C

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

PNP TIP105, TIP106, TIP107

20,000

VCE = 4.0 V

10,000

7000 5000

3000 2000

1000

, DC CURRENT GAIN

FE

700

h

500

300

5.0 7.0

200

0.1

Figure 8. DC Current Gain

3.0

TJ = 25°C

2.6

VCE = 4.0 V

TJ = 150°C

25°C

-55°C

0.2 0.3 0.5 1.0 2.0 10

IC, COLLECTOR CURRENT (AMP)

0.7 3.0

5.0 7.0

TJ = 25°C

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

V, VOLTAGE (VOLTS)

CE

2.2

1.8

1.4

1.0

3.0

2.5

2.0

1.5

1.0

IC = 2.0 A

0.3

0.5 1.0 2.0 10 30

0.7 5.0

4.0 A

IB, BASE CURRENT (mA)

6.0 A

3.0 7.0

Figure 9. Collector Saturation Region

TJ = 25°C

V

@ IC/IB = 250

BE(sat)

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

CE(sat)

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

1.0

3.0

2.5

2.0

1.5

1.0

0.3

20

IC = 2.0 A 4.0 A 6.0 A

0.5 1.0 2.0 10 30

0.7 5.0 20

IB, BASE CURRENT (mA)

TJ = 25°C

VBE @ VCE = 4.0 V

V

BE(sat)

V

@ IC/IB = 250

CE(sat)

3.0 7.0

@ IC/IB = 250

0.5

0.1

0.2 0.3 0.5 1.0 2.0 5.0 10

IC, COLLECTOR CURRENT (AMP)

0.7 7.0

3.0

Figure 10. “On” Voltages

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0.5

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

IC, COLLECTOR CURRENT (AMP)

6

3.00.7 7.0

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

l

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

ISSUE AE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

-T-

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.161 3.61 4.09

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP100/D

7

ON Semiconductor TIP100, TIP101, TIP102, TIP105, TIP106 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual