ON Semiconductor TIP100, TIP101, TIP102, TIP105, TIP106 Service Manual

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

TIP101, TIP102, TIP106 and TIP107 are Preferred Devices

Plastic Medium-Power Complementary Silicon Transistors

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Designed for general-purpose amplifier and low-speed switching

applications.

Features

•High DC Current Gain -

h

FE

= 2500 (Typ) @ IC = 4.0 Adc

•Collector-Emitter Sustaining Voltage - @ 30 mAdc

V

CEO(sus)

= 60 Vdc (Min) - TIP100, TIP105 = 80 Vdc (Min) - TIP101, TIP106 = 100 Vdc (Min) - TIP102, TIP107

•Low Collector-Emitter Saturation Voltage -

V

= 2.0 Vdc (Max) @ IC

CE(sat)

= 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc

•Monolithic Construction with Built-in Base-Emitter Shunt Resistors

•Pb-Free Packages are Available*

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60-80-100 VOLTS, 80 WATTS

MARKING DIAGRAM

4

TO-220AB

CASE 221A

1

2

3

TIP10x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package

STYLE 1

TIP10xG

AYWW

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 12

1 Publication Order Number:

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

TIP100/D

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

MAXIMUM RATINGS

TIP100,

TIP105

60

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Rating

Symbol

V

CEO

V

CB

V

EB

I

C

- Peak

Base Current

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Unclamped Inductive Load Energy (1)

Total Power Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

I

P

TJ, T

B

D

E

D

stg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

Symbol

R

q

JC

R

q

JA

TIP101,

TIP106

80

5.0

8.0 15

1.0

80

0.64

30

2.0

0.016

–65 to +150

Max

1.56

62.5

TIP102,

TIP107

100

Unit

Vdc

Adc

W

W/°C

mJ

W

W/°C

°C

Unit

°C/W

ORDERING INFORMATION

Device Package Shipping

TIP100 TO-220 50 Units / Rail

TIP100G TO-220

(Pb-Free)

TIP101 TO-220 50 Units / Rail

TIP101G TO-220

(Pb-Free)

TIP102 TO-220 50 Units / Rail

TIP102G TO-220

(Pb-Free)

TIP105 TO-220 50 Units / Rail

TIP105G TO-220

(Pb-Free)

TIP106 TO-220 50 Units / Rail

TIP106G TO-220

(Pb-Free)

TIP107 TO-220 50 Units / Rail

TIP107G TO-220

(Pb-Free)

50 Units / Rail

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2

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

ÎÎÎ

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (1)

= 30 mAdc, IB = 0) TIP100, TIP105

(I

C

TIP101, TIP106 TIP102, TIP107

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP100, TIP105 (VCE = 40 Vdc, IB = 0) TIP101, TIP106 (VCE = 50 Vdc, IB = 0) TIP102, TIP107

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP100, TIP105 (VCB = 80 Vdc, IE = 0) TIP101, TIP106 (VCB = 100 Vdc, IE = 0) TIP102, TIP107

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)

Collector-Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc)

Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

h

fe

C

ob

Min

60 80

100

-

1000

200

-

4.0

-

Max

-

50 50 50

8.0

20,000

-

2.0

2.5

2.8

-

300 200

Unit

Vdc

mAdc

-

Vdc

-

pF

T

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

C

A

80

60

T

40

20

0

C

T

A

0 20 40 60 80 100 120 160

T, TEMPERATURE (°C)

Figure 1. Power Derating

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3

140