ON Semiconductor MC33375 Technical data

查询MC33375D-2.5供应商

MC33375 Series

300 mA, Low Dropout Voltage Regulator with On/Off Control

The MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223 and SOP−8. These devices feature a very low quiescent current and are capable of supplying output currents up to 300 mA. Internal current and thermal limiting protection are provided by the presence of a short circuit at the output and an internal thermal shutdown circuit.

The MC33375 has a control pin that allows a logic level signal to turn−off or turn−on the regulator output.

Due to the low input−to−output voltage differential and bias current specifications, these devices are ideally suited for battery powered computer, consumer, and industrial equipment where an extension of useful battery life is desirable.

Features:

• Low Quiescent Current (0.3 A in OFF mode; 125 A in ON mode)

• Low Input−to−Output Voltage Differential of 25 mV at I

and 260 mV at I

= 300 mA

O

• Extremely Tight Line and Load Regulation

• Stable with Output Capacitance of only 0.33 F for 2.5 V Output

Voltage

• Internal Current and Thermal Limiting

• Logic Level ON/OFF Control

• Pb−Free Packages are Available

V

in

Thermal &

Anti−sat

On/Off

Block

1.23 V V. Ref.

Protection

Rint

54 K

O

GND

= 10 mA,

V

out

http://onsemi.com

LOW DROPOUT

MICROPOWER VOLTAGE

REGULATOR

MARKING

DIAGRAMS

4

SOT−223

ST SUFFIX

1

8

(Note: Microdot may be in either location)

See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.

CASE 318E

SOIC−8

1

D SUFFIX

CASE 751

A = Assembly Location Y = Year M = Date Code L = Wafer Lot W = Work Week xx = Voltage Version G = Pb−Free Package

ORDERING INFORMATION

AYM

375xx G

G

1

8

375xx

ALYW

G

1

This device contains 41 active transistors

Figure 1. Simplified Block Diagram

October, 2006 − Rev. 10

1 Publication Order Number:

MC33375/D

MC33375 Series

PIN CONNECTIONS

Gnd

4

123

V

in

ON/

V

out

ON/OFF

Input

Gnd Gnd

1 2 3 4

8 7 6 5

Output Gnd Gnd N/C

OFF

MAXIMUM RATINGS

Rating Symbol Value Unit

Input Voltage V

CC

Power Dissipation and Thermal Characteristics TA = 25°C

Maximum Power Dissipation

Case 751 (SOP−8) D Suffix Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case

Case 318E (SOT−223) ST Suffix

Thermal Resistance, Junction−to−Air

Thermal Resistance, Junction−to−Case Output Current I Maximum Junction Temperature T Operating Ambient Temperature Range T Storage Temperature Range T

P

D

R



JA

R



JC

R



JA

R



JC

O

J A

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Opera t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

13 Vdc

Internally Limited

160

25

245

15 300 mA 150 °C

− 40 to +125 °C

− 65 to +150 °C

W

°C/W °C/W

http://onsemi.com

2

MC33375 Series

ELECTRICAL CHARACTERISTICS (C

Characteristic

Output Voltage IO = 0 mA to 250 mA

1.8 V Suffix T

2.5 V Suffix

3.0 V Suffix

3.3 V Suffix

5.0 V Suffix

1.8 V Suffix V

2.5 V Suffix 2% Tolerance from T

3.0 V Suffix

3.3 V Suffix

5.0 V Suffix

Line Regulation Vin = [VO + 1] V to 12 V, IO = 250 mA,

Load Regulation Vin = [VO + 1] V, IO = 0 mA to 250 mA,

Dropout Voltage

= 10 mA TJ = −40°C to +125°C

I

O

= 100 mA

I

O

= 250 mA

I

O

= 300 mA

I

O

Ripple Rejection (120 Hz) V Output Noise Voltage

C

= 1.0 FIO = 50 mA (10 Hz to 100 kHz)

L

C

= 200 F

L

= 25°C, Vin = [VO + 1] V

A

= [VO + 1] V, 0 < IO < 100 mA

in

All Suffixes T

= 25°C

A

= 25°C

A

in(peak−peak)

= 1.0 F, TA = 25°C, for min/max values TJ = −40°C to +125°C, Note 1)

L

Symbol Min Typ Max Unit

V

= −40 to +125°C

J

O

Reg

load

Vin − V

line

1.782

2.475

2.970

3.267

4.950

1.764

2.450

2.940

3.234

4.900

1.80

2.50

3.00

3.30

5.00

−

1.818

2.525

3.030

3.333

5.05

1.836

2.550

3.060

3.366

5.100

− 2.0 10 mV

− 5.0 25 mV

O

−

25

115 220 260

100 200 400 500

= [VO + 1.5] V to [VO + 5.5] V − 65 75 − dB

V

n

−

160

46

−

CURRENT PARAMETERS

Quiescent Current ON Mode Vin = [VO + 1] V, IO = 0 mA I Quiescent Current OFF Mode I Quiescent Current ON Mode SAT Vin = [VO − 0.5] V, IO = 0 mA (Note 2)

1.8 V Suffix

2.5 V Suffix

3.0 V Suffix

3.3 V Suffix

5.0 V Suffix

Current Limit Vin = [VO + 1] V, VO Shorted I

QOn QOff

I

QSAT

LIMIT

− 125 200

− 0.3 4.0

−

1100 1100 1500 1500 1500

1500 1500 2000 2000 2000

− 450 − mA

ON/OFF INPUTS

On/Off Input Voltage

Logic “1” (Regulator On) V Logic “0” (Regulator Off) V Logic “0” (Regulator Off) V

= VO ± 2%

out

< 0.03 V

out

< 0.05 V (1.8 V Option)

out

V

CTRL

2.4

−

0.5

0.3

THERMAL SHUTDOWN

Thermal Shutdown − − 150 − °C

1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.

2. Quiescent Current is measured where the PNP pass transistor is in saturation. V

= [VO − 0.5] V guarantees this condition.

in

Vdc

mV

Vrms

A A A

V

http://onsemi.com

3

MC33375 Series

DEFINITIONS

Load Regulation − The change in output voltage for a

change in load current at constant chip temperature.

Dropout Voltage − The input/output differential at which

the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements.

Output Noise Voltage − The RMS AC voltage at the

output with a constant load and no input ripple, measured over a specified frequency range.

Maximum Power Dissipation − The maximum total

dissipation for which the regulator will operate within specifications.

Quiescent Current − Current which is used to operate the

regulator chip and is not delivered to the load.

Line Regulation − The change in output voltage for a

change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected.

Maximum Package Power Dissipation − The maximum

package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 150°C. The junction temperature is rising while the

difference between the input power (V output power (V

out

X I

out

) is increasing.

X ICC) and the

CC

Depending on ambient temperature, it is possible to calculate the maximum power dissipation and so the maximum current as following:

TJ–T

R

A

JA

Pd +

The maximum operating junction temperature TJ is specified at 150°C, if T

= 25°C, then PD can be found. By

A

neglecting the quiescent current, the maximum power dissipation can be expressed as:

P

I

out

+

D

VCC–V

out

The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example).

Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature (150°C for MC33375) and ambient temperature.

TJ–T

R

JA

+

A

P

D

http://onsemi.com

4

MC33375 Series

7

TA = 25° C

6

= 0.47 F

C

5

L

I

= 10 mA

L

V

= 3.3 V

out

V

in

4

3

, INPUT VOLTAGE (V)

2

in

V

out

1

0

20 40 60 80 100 120 140 160 180 200

TIME (S)

Figure 2. Line Transient Response Figure 3. Line Transient Response

300

200

100

0

LOAD

CURRENT

−100

−200

−300

−400

LOAD CURRENT (mA)

−500

−600

−700

CL = 1.0 F V

= 3.3 V

out

T

= 25° C

A

V

= 4.3 V

in

0

50 100 150 200 250 400

V

out

CHANGE

TIME (S)

Figure 4. Load Transient Response

300 350

200

OUTPUT VOLTAGE CHANGE (mV)

150

100

50

0

−50

−100

1.0

0.8 OUTPUT VOLTAGE CHANGE (V)

0.6

0.4

0.2

0

−0.2

−0.4

−0.6

−0.8

−1.0

7

TA = 25° C

6

= 33 F

C

5

L

I

= 10 mA

L

V

= 3.3 V

out

V

in

4

3

2

, INPUT VOLTAGE (V)

in

V

1

V

out

0

50 100 150 200

TIME (S)

350

250

150

50

−50

−150

−250

−350

−450

LOAD CURRENT (mA)

−550

−650

−750 0 250 300

LOAD CURRENT

V

out

CHANGE

50 100 150

200

CL = 33.0 F V

out

TA = 25° C V

in

TIME (S)

Figure 5. Load Transient Response

= 3.3 V

= 4.3 V

70

OUTPUT VOLTAGE CHANGE (mV)

60

50

40

30

20

10

0

−10

−20

0.14

OUTPUT VOLTAGE CHANGE (V)

0.09

0.04

−0.01

−0.06

−0.11

−0.16

3.5

3.0

IL = 1 mA

2.5

IL = 250 mA

2.0

1.5

1.0

OUTPUT VOLTAGE (V)

0.5

0

0.5

0

1.0

1.5 2.0

2.5

3.0 3.5 4.0

INPUT VOLTAGE (V)

Figure 6. Output Voltage versus Input Voltage

300

250

200

150

100

DROPOUT VOLTAGE (mV)

50

0

4.5

5.0

1

Figure 7. Dropout Voltage versus Output Current

http://onsemi.com

5

10 100 1000

IO, OUTPUT CURRENT (mA)