Quality bipolar fabrication with innovative design concepts are
employed for the MC33071/72/74, MC34071/72/74 series of
monolithic operational amplifiers. This series of operational
amplifiers offer 4.5 MHz of gain bandwidth product, 13 V/µs slew rate
and fast setting time without the use of JFET device technology.
Although this series can be operated from split supplies, it is
particularly suited for single supply operation, since the common
mode input voltage range includes ground potential (VEE). With A
Darlington input stage, this series exhibits high input resistance, low
input offset voltage and high gain. The all NPN output stage,
characterized by no deadband crossover distortion and large output
voltage swing, provides high capacitance drive capability, excellent
phase and gain margins, low open loop high frequency output
impedance and symmetrical source/sink AC frequency response.
The MC33071/72/74, MC34071/72/74 series of devices are
available in standard or prime performance (A Suffix) grades and are
specified over the commercial, industrial/vehicular or military
temperature ranges. The complete series of single, dual and quad
operational amplifiers are available in plastic DIP, SOIC and TSSOP
surface mount packages.
• Wide Bandwidth: 4.5 MHz
• High Slew Rate: 13 V/µs
• Fast Settling Time: 1.1 µs to 0.1%
• Wide Single Supply Operation: 3.0 V to 44 V
• Wide Input Common Mode Voltage Range: Includes Ground (V
• Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)
• Large Output Voltage Swing: –14.7 V to +14 V (with ±15 V
Supplies)
• Large Capacitance Drive Capability: 0 pF to 10,000 pF
• Low Total Harmonic Distortion: 0.02%
• Excellent Phase Margin: 60°
• Excellent Gain Margin: 12 dB
• Output Short Circuit Protection
• ESD Diodes/Clamps Provide Input Protection for Dual and Quad
EE)
8
P SUFFIX
CASE 626
14
1
P SUFFIX
CASE 646
Output 1
Inputs 1
Inputs 2
Output 2
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8
1
1
SO–8
D SUFFIX
CASE 751
PIN CONNECTIONS
Offset Null
Inputs
1
2
–
+
3
4
V
EE
(Single, Top View)
1
Output 1 V
2
–
Inputs 1
3
4
V
EE
(Dual, Top View)
14
TSSOP–14
DTB SUFFIX
CASE 948G
+
1
8
NC
7
V
6
Output
5
Offset Null
8
CC
7
Output 2
6
–
+
5
14
SO–14
D SUFFIX
CASE 751A
CC
Inputs 2
1
PIN CONNECTIONS
1
2
1
–
+
3
4
V
CC
5
2
+
–
6
78
14
Output 4
13
4
–
Inputs 4
+
12
11
V
EE
3
10
+
Inputs 3
–
9
Output 3
Semiconductor Components Industries, LLC, 1999
October, 1999 – Rev. 2
(Quad, T op View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
1Publication Order Number:
MC34071/D
Inputs
MC34071,2,4,A MC33071,2,4,A
Representative Schematic Diagram
(Each Amplifier)
V
CC
Q2
Q3Q4
R1
Q8
Q9
C1
R2
Q10
Q1
Bias
–
+
Q5
Q11
Q6
C2
Q7
D2
Q17
R6R7
D3
Q18
Output
R8
Q19
Base
Current
Cancellation
Offset Null
(MC33071, MC34071 only)
Q13
Q12
D1
R3R4
MAXIMUM RATINGS
RatingSymbolValueUnit
Supply Voltage (from VEE to VCC)V
Input Differential Voltage RangeV
Input Voltage RangeV
Output Short Circuit Duration (Note 2)t
Operating Junction TemperatureT
Storage Temperature RangeT
NOTES: 1.Either or both input voltages should not exceed the magnitude of VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ) is not
exceeded (see Figure 1).
S
IDR
IR
SC
J
stg
+44V
Note 1V
Note 1V
Indefinitesec
+150°C
–60 to +150°C
Q14
Q15Q16
R5
Current
Limit
VEE/Gnd
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2
MC34071,2,4,A MC33071,2,4,A
ELECTRICAL CHARACTERISTICS (V
TA = T
Input Offset Voltage (RS = 100 Ω, VCM = 0 V, VO = 0 V)
Average Temperature Coefficient of Input Offset Voltage
Input Bias Current (VCM = 0 V, VO = 0 V)
Input Offset Current (VCM = 0 V, VO = 0V)
Input Common Mode Voltage Range
Large Signal Voltage Gain (VO = ±10 V, RL = 2.0 kΩ)
Output Voltage Swing (VID = ±1.0 V)
Output Short Circuit Current (VID = 1.0 V, VO = 0 V,
Common Mode Rejection
Power Supply Rejection (RS = 100 Ω)
Power Supply Current (Per Amplifier, No Load)
NOTES: 3.T
to T
low
VCC = +15 V, VEE = –15 V, TA = +25°C
VCC = +5.0 V, VEE = 0 V, TA = +25°C
VCC = +15 V, VEE = –15 V, TA = T
RS = 10 Ω, VCM = 0 V, VO = 0 V,
TA = T
TA = +25°C
TA = T
low
TA = +25°C
TA = T
low
TA = +25°C
TA = T
low
TA = +25°C
TA = T
low
VCC = +5.0 V, VEE = 0 V, RL = 2.0 kΩ, TA = +25°C
VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C
VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
VCC = +5.0 V, VEE = 0 V, RL = 2.0 kΩ, TA = +25°C
VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C
VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
TA = 25°C)
Source
Sink
RS ≤ 10 kΩ, VCM = V
VCC/VEE = +16.5 V/–16.5 V to +13.5 V/–13.5 V ,
TA = 25°C
VCC = +5.0 V, VEE = 0 V, VO = +2.5 V, TA = +25°C
VCC = +15 V, VEE = –15 V, VO = 0 V, TA = +25°C
VCC = +15 V, VEE = –15 V, VO = 0 V,
TA = T
low
)
high
CharacteristicsSymbolMinTypMaxMinTypMaxUnit
low
to T
low
high
to T
high
to T
high
to T
high
to T
high
to T
low
high
to T
low
high
, TA = 25°C
ICR
to T
low
high
= –40°C for MC33071, 2, 4, /AT
=0°C for MC34071, 2, 4, /A= +70°C for MC34071, 2, 4, /A
= +15 V , VEE = –15 V , RL = connected to ground, unless otherwise noted. See Note 3 for
CC
to T
high
A SuffixNon–Suffix
V
IO
∆VIO/∆T—10——10—µV/°C
I
IB
I
IO
V
ICR
A
VOL
V
OH
V
OL
I
SC
CMR8097—7097—dB
PSR8097—7097—dB
I
D
= +85°C for MC33071, 2, 4, /A
high
—
—
—
—
—
—
—
50
25
3.7
13.6
13.4
—
—
—
10
20
—
—
—
0.5
0.5
—
100
—
6.0
—
VEE to (VCC –1.8)
VEE to (VCC –2.2)
100
—
4.0
14
—
0.1
–14.7
—
30
30
1.6
1.9
—
3.0
3.0
5.0
500
700
50
300
—
—
—
—
—
0.3
–14.3
–13.5
—
—
2.0
2.5
2.8
—
—
—
—
—
—
—
25
20
3.7
13.6
13.4
—
—
—
10
20
—
—
—
1.0
1.5
—
100
—
6.0
—
VEE to (VCC –1.8)
VEE to (VCC –2.2)
100
—
4.0
14
—
0.1
–14.7
—
30
30
1.6
1.9
—
5.0
5.0
7.0
500
700
75
300
—
—
—
—
—
0.3
–14.3
–13.5
—
—
2.0
2.5
2.8
mV
nA
nA
V
V/mV
V
V
mA
mA
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3
MC34071,2,4,A MC33071,2,4,A
AC ELECTRICAL CHARACTERISTICS (V
CharacteristicsSymbolMinTypMaxMinTypMaxUnit
Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, CL = 500 pF)
AV = +1.0
AV = –1.0
Setting Time (10 V Step, AV = –1.0)
To 0.1% (+1/2 LSB of 9–Bits)
To 0.01% (+1/2 LSB of 12–Bits)
Gain Bandwidth Product (f = 100 kHz)GBW3.54.5—3.54.5—MHz
Power Bandwidth
AV = +1.0, RL = 2.0 kΩ, VO = 20 Vpp, THD = 5.0%
Phase margin
RS = 100 Ω, f = 1.0 kHz
Equivalent Input Noise Current
f = 1.0 kHz
Differential Input Resistance
VCM = 0 V
Differential Input Capacitance
VCM = 0 V
Total Harmonic Distortion
AV = +10, RL = 2.0 kΩ, 2.0 Vpp ≤ VO ≤ 20 Vpp, f = 10 kHz
Channel Separation (f = 10 kHz)——120——120—dB
Open Loop Output Impedance (f = 1.0 MHz)|ZO|—30——30—W
= +15 V, VEE = –15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)
CC
A SuffixNon–Suffix
SR
t
s
BW—160——160—kHz
f
m
A
m
e
n
i
n
R
in
C
in
THD—0.02——0.02—%
8.0
—
—
—
—
—
—
—
—32——32—
—0.22——0.22—
—150——150—MΩ
—2.5——2.5—pF
10
13
1.1
2.2
60
40
12
4.0
—
—
—
—
—
—
—
—
8.0
—
—
—
—
—
—
—
10
13
1.1
2.2
60
40
12
4.0
—
—
—
—
—
—
—
—
V/µs
nV/ Hz√
pA/ Hz√
µs
Deg
dB
Figure 1. Power Supply ConfigurationsFigure 2. Offset Null Circuit
V
Single SupplySplit Supplies
3.0 V to 44 VVCC+|VEE|≤44 V
V
CC
1
2
3
4
V
EE
V
CC
V
EE
V
1
2
3
4
V
CC
Offset nulling range is approximately ±80 mV with a 10 k
potentiometer (MC33071, MC34071 only).
EE
CC
7
2
–
3
+
4
V
EE
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4
6
5
1
10 k
MC34071,2,4,A MC33071,2,4,A
5
Figure 3. Maximum Power Dissipation versus
T emperature for Package Types
2400
2000
1600
1200
D
P , MAXIMUM POWER DISSIPATION (mW)
SO–14 Pkg
800
400
0
–55 –40 –20020406080 100 120 140 160
8 & 14 Pin Plastic Pkg
SO–8 Pkg
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Input Common Mode V oltage
Range versus T emperature
V
CC
V
VCC/VEE = +1.5 V/ –1.5 V to +22 V/ –22 V
CC
VCC –0.8
VCC –1.6
VCC –2.4
Figure 4. Input Offset Voltage versus
T emperature for Representative Units
4.0
2.0
0
–2.0
IO
V
–4.0
V , INPUT OFFSET VOLTAGE (mV)
–55–25025507510012
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Normalized Input Bias Current
versus T emperature
1.3
1.2
1.1
1.0
0.9
VCC = +15 V
VEE = –15 V
VCM = 0
VCC = +15 V
VEE = –15 V
VCM = 0
VEE +0.01
V
EE
–55–250255075100125
1.4
1.2
1.0
0.8
IB
I , INPUT BIAS CURRENT (NORMALIZED)
0.6
V
EE
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Normalized Input Bias Current versus
Input Common Mode Voltage
VCC = +15 V
VEE = –15 V
TA = 25°C
–12–8.0–4.004.08.012
VIC, INPUT COMMON MODE VOLTAGE (V)
0.8
IB
I , INPUT BIAS CURRENT (NORMALIZED)
0.7
–55–250255075100125
ICR
V, INPUT COMMON MODE VOLTAGE RANGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Split Supply Output Voltage
Swing versus Supply V oltage
50
)
, OUTPUT VOLTAGE SWING (V
V
RL Connected
to Ground TA = 25°C
pp
40
30
20
10
O
0
05.010152025
RL = 10 k
VCC, |VEE|, SUPPLY VOLTAGE (V)
RL = 2.0 k
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5
MC34071,2,4,A MC33071,2,4,A
Figure 9. Single Supply Output Saturation
versus Load Resistance to V
V
VCC –1.0
VCC –2.0
VEE +2.0
VEE +1.0
sat
V , OUTPUT SATURATION VOLTAGE (V)
CC
V
V
EE
05.0101520
VCC/VEE = +5.0 V/ –5.0 V to +22 V/ –22 V
TA = 25°C
CC
Source
Sink
V
EE
IL, LOAD CURRENT (±mA)
Figure 11. Single Supply Output Saturation
versus Load Resistance to Ground
0
V
–0.4
–0.8
2.0
1.0
sat
V , OUTPUT SATURATION VOLTAGE (V)
1001.0 k10 k100 k
CC
VCC = +15 V
RL to V
TA = 25°C
Gnd
RL, LOAD RESISTANCE TO VCC (Ω)
CC
CC
Figure 10. Split Supply Output Saturation
versus Load Current
V
CC
VCC–2.0
VCC–4.0
0.2
0.1
sat
V , OUTPUT SATURATION VOLTAGE (V)
0
1001.0 k10 k100 k
RL, LOAD RESISTANCE TO GROUND (Ω)
Gnd
V
CC
Figure 12. Output Short Circuit Current
versus T emperature
60
50
40
30
20
SC
10
I, OUTPUT CURRENT (mA)
0
–55–250255075100125
Source
TA, AMBIENT TEMPERATURE (°C)
Sink
VCC = +15 V
VEE = –15 V
RL ≤ 0.1 Ω∆Vin = 1.0 V
VCC = +15 V
RL = Gnd
TA = 25°C
Figure 13. Output Impedance
versus Frequency
50
VCC = +15 V
VEE = –15 V
40
VCM = 0
VO = 0
∆IO = ±0.5 mA
30
TA = 25°C
20
AV = 1000
10
O
Z , OUTPUT IMPEDANCE ( )Ω
0
1.0 k10 k1001.0 M10 M
AV = 100AV = 10AV = 1.0
f, FREQUENCY (Hz)
28
)
24
pp
20
16
12
8.0
4.0
, OUTPUT VOLTAGE SWING (V
O
V
0
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6
Figure 14. Output Voltage Swing
versus Frequency
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k
THD ≤ 1.0%
TA = 25°C
3.0 k10 k30 k100 k300 k1.0 M 3.0 M
f, FREQUENCY (Hz)
MC34071,2,4,A MC33071,2,4,A
5
A,
O
E
LOO
OL
AGE
GAI
(
B)
,
O
AL
AR
O
IC
IS
OR
IO
(
)
A,
O
E
LOO
OL
AGE
GAI
(
B)
Figure 15. T otal Harmonic Distortion
versus Frequency
0.4
%
N
T
0.3
T
D
N
0.2
M
H
0.1
T
T
THD
0
101001.0 k10 k100 k
AV = 1000
AV = 100
AV = 10
f, FREQUENCY (Hz)
VCC = +15 V
VEE = –15 V
VO = 2.0 V
RL = 2.0 k
TA = 25°C
AV = 1.0
Figure 17. Open Loop Voltage Gain
versus T emperature
116
d
N
T
P V
N
P
VCC = +15 V
112
VEE = –15 V
VO= –10 V to +10 V
RL = 10 k
108
f ≤ 10Hz
104
100
VOL
96
–55–250255075100125
TA, AMBIENT TEMPERATURE (°C)
Figure 16. T otal Harmonic Distortion
versus Output Voltage Swing
4.0
VCC = +15 V
VEE = –15 V
3.0
AV = 1000
pp
2.0
AV = 100
1.0
THD, TOTAL HARMONIC DISTORTION (%)
0
AV = 10
AV = 1.0
04.08.0121620
VO, OUTPUT VOLTAGE SWING (Vpp)
RL = 2.0 k
TA = 25°C
Figure 18. Open Loop Voltage Gain and
Phase versus Frequency
100
0
80
Phase
60
40
VCC = +15 V
VEE = –15 V
20
VO = 0 V
RL = 2.0 k
VOL
TA = 25°C
A, OPEN LOOP VOLTAGE GAIN (dB)
0
1.0101001.0 k10 k 100 k 1.0 M 10 M 100 M
Gain
f, FREQUENCY (Hz)
Phase
Margin
= 60°
45
90
135
, EXCESS PHASE (DEGREES)
φ
180
Figure 19. Open Loop Voltage Gain and
Phase versus Frequency
20
d
N
10
0
T
–10
P V
1. Phase RL = 2.0 k
2. Phase RL = 2.0 k, CL = 300 pF
N
–20
3. Gain RL = 2.0 k
P
4. Gain RL = 2.0 k, CL = 300 pF
VCC = +15 V
–30
VEE = 15 V
VOL
VO = 0 VTA = 25°C
–40
1.02.03.0 5.07.0102030
1
Phase
Margin = 60°
f, FREQUENCY (MHz)
Gain
Margin = 12 dB
2
100
120
140
160
3
180
4
, EXCESS PHASE (DEGREES)
φ
GBW, GAIN BANDWIDTH PRODUCT (NORMALIED)
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7
Figure 20. Normalized Gain Bandwidth
Product versus T emperature
1.15
1.1
1.05
1.0
0.95
0.9
0.85
–55–25025507510012
TA, AMBIENT TEMPERATURE (°C)
VCC = +15 V
VEE = –15 V
RL = 2.0 k
MC34071,2,4,A MC33071,2,4,A
Figure 21. Percent Overshoot versus
Load Capacitance
100
VCC = +15 V
VEE = –15 V
80
RL = 2.0 k
VO = –10 V to +10 V
TA = 25°C
60
40
PERCENT OVERSHOOT
20
0
101001.0 k10 k
CL, LOAD CAPACITANCE (pF)
70
60
50
40
30
20
, PHASE MARGIN (DEGREES)φ
m
10
0
Figure 22. Phase Margin versus
Load Capacitance
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k to
VO = –10 V to +10 V
TA = 25°C
101001.0 k10 k
CL, LOAD CAPACITANCE (pF)
Figure 23. Gain Margin versus Load CapacitanceFigure 24. Phase Margin versus Temperature
14
12
10
8.0
6.0
m
4.0
A , GAIN MARGIN (dB)
2.0
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k to ∞
VO = –10 V to +10 V
TA = 25°C
80
CL = 10 pF
60
40
20
, PHASE MARGIN (DEGREES)φ
m
CL = 100 pF
CL = 1,000 pF
CL = 10,000 pF
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k to
VO = –10 V to +10 V
R
∞
0
101001.0 k10 k
CL, LOAD CAPACITANCE (pF)
Figure 25. Gain Margin versus T emperature
16
VCC = +15 V
12
VEE = –15 V
AV = +1.0
RL = 2.0 k to ∞
VO = –10 V to +10 V
8.0
m
4.0
A , GAIN MARGIN (dB)
0
–55–250255075100
CL = 1,000 pF
TA, AMBIENT TEMPERATURE (°C)
CL = 10 pF
CL = 100 pF
CL = 10,000 pF
125
0
–55–250255075100125
TA, AMBIENT TEMPERATURE (°C)
Figure 26. Phase Margin and Gain Margin
versus Differential Source Resistance
12
10
8.0
6.0
4.0
2.0
m
A , GAIN MARGIN (dB)
R
1
V
O
–
+
R
2
VCC = +15 V
VEE = –15 V
RT = R1 + R
AV = +100
0
VO = 0 V
TA = 25°C
1.01001.0 k10 k10100 k
2
RT, DIFFERENTIAL SOURCE RESISTANCE (Ω)
Gain
Phase
70
60
50
40
30
20
, PHASE MARGIN (DEGREES)φ
m
10
0
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8
SR,
SLE
RA
E
(
OR
ALI
E
)
C
R,
CO
O
O
E
RE
EC
IO
(
B)
MC34071,2,4,A MC33071,2,4,A
Figure 27. Normalized Slew Rate
versus T emperature
1.15
D
Z
M
N
T
W
1.1
1.05
1.0
0.95
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k
CL = 500 pF
0.9
0.85
–55–250255075100125
TA, AMBIENT TEMPERATURE (°C)
10
5.0
0
–5.0
O
V , OUTPUT VOLTAGE SWING FROM 0 V (V)
–10
∆
00.51.01.52.02.53.03.5
Figure 29. Small Signal Transient ResponseFigure 30. Large Signal Transient Reponse
Figure 28. Output Settling Time
10 mV
10 mV
1.0 mV
1.0 mV
1.0 mV
1.0 mV
ts, SETTLING TIME (µs)
VCC = +15 V
VEE = –15 V
AV = –1.0
TA = 25°C
Compensated
Uncompensated
0
50 mV/DIV
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k
CL = 300 pF
TA = 25°C
2.0 µs/DIV
Figure 31. Common Mode Rejection
versus Frequency
100
d
N
T
J
TA = 25°C
80
TA = –55°C
60
D
N M
40
∆V
MM
M
20
CM
CMR = 20 Log
0
0.11.0101001.0 k10 k100 k 1.0 M 10 M
TA = 125°C
–
A
DM
+
∆V
∆V
CM
∆V
x A
O
f, FREQUENCY (Hz)
VCC = +15 V
VEE = –15 V
VCM = 0 V
∆VCM = ±1.5 V
O
DM
VCC = +15 V
VEE = –15 V
AV = +1.0
RL = 2.0 k
CL = 300 pF
0
TA = 25°C
5.0 V/DIV
1.0 µs/DIV
Figure 32. Power Supply Rejection
versus Frequency
100
80
∆V
CC
60
40
20
PSR, POWER SUPPLY REJECTION (dB)
0
–
A
DM
+
+PSR = 20 Log
–PSR = 20 Log
∆V
∆V
O
EE
∆VO/A
DM
∆V
CC
∆VO/A
DM
∆V
EE
0.11.0101001.0 k10 k100 k1.0 M 10 M
f, FREQUENCY (Hz)
VCC = +15 V
VEE = –15 V
TA = 25°C
(∆VCC = +1.5 V)
–PSR
(∆VEE = +1.5 V)
+PSR
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9
MC34071,2,4,A MC33071,2,4,A
Figure 33. Supply Current versus
Supply V oltage
9.0
8.0
7.0
6.0
CC
5.0
I , SUPPLY CURRENT (mA)
4.0
05.010152025
TA = –55°C
TA = 25°C
TA = 125°C
VCC, |VEE|, SUPPLY VOLTAGE (V)
105
95
85
75
PSR, POWER SUPPLY REJECTION (dB)
65
–55–250255075100125
Figure 34. Power Supply Rejection
versus T emperature
(∆VEE = +1.5 V)
–PSR
(∆VCC = +1.5 V)
+PSR
∆VO/A
+PSR = 20 Log
–PSR = 20 Log
TA, AMBIENT TEMPERATURE (°C)
∆V
∆VO/A
∆V
DM
CC
DM
EE
Figure 35. Channel Separation versus FrequencyFigure 36. Input Noise versus Frequency
120
VCC = +15 V
100
VEE = –15 V
TA = 25°C
80
60
40
CHANNEL SEPARATION (dB)
20
0
1020305070100200300
f, FREQUENCY (kHz)
70
Hz )
60
√
nV
50
40
30
20
10
n
e , INPUT NOICE VOLTAGE (
0
101001.0 k10 k100 k
Voltage
Current
f, FREQUENCY (kHz)
VCC = +15 V
VEE = –15 V
VCM = 0
TA = 25°C
VCC = +15 V
VEE = –15 V
∆V
–
A
DM
+
∆V
CC
EE
∆V
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
O
Hz
√
n
i , INPUT NOISE CURRENT (pA )
APPLICATIONS INFORMATION
CIRCUIT DESCRIPTION/PERFORMANCE FEA TURES
Although the bandwidth, slew rate, and settling time of the
MC34071 amplifier series are similar to op amp products
utilizing JFET input devices, these amplifiers offer other
additional distinct advantages as a result of the PNP
transistor differential input stage and an all NPN transistor
output stage.
Since the input common mode voltage range of this input
stage includes the VEE potential, single supply operation is
feasible to as low as 3.0 V with the common mode input
voltage at ground potential.
The input stage also allows differential input voltages up
to ±44 V, provided the maximum input voltage range is not
exceeded. Specifically, the input voltages must range
between VEE and VCC supply voltages as shown by the
maximum rating table. In practice, although not
recommended, the input voltages can exceed the V
voltage by approximately 3.0 V and decrease below the V
CC
EE
voltage by 0.3 V without causing product damage, although
output phase reversal may occur. It is also possible to source
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up to approximately 5.0 mA of current from VEE through
either inputs clamping diode without damage or latching,
although phase reversal may again occur.
If one or both inputs exceed the upper common mode
voltage limit, the amplifier output is readily predictable and
may be in a low or high state depending on the existing input
bias conditions.
Since the input capacitance associated with the small
geometry input device is substantially lower (2.5 pF) than
the typical JFET input gate capacitance (5.0 pF), better
frequency response for a given input source resistance can
be achieved using the MC34071 series of amplifiers. This
performance feature becomes evident, for example, in fast
settling D–to–A current to voltage conversion applications
where the feedback resistance can form an input pole with
the input capacitance of the op amp. This input pole creates
a 2nd order system with the single pole op amp and is
therefore detrimental to its settling time. In this context,
lower input capacitance is desirable especially for higher
10
MC34071,2,4,A MC33071,2,4,A
values of feedback resistances (lower current DACs). This
input pole can be compensated for by creating a feedback
zero with a capacitance across the feedback resistance, if
necessary, to reduce overshoot. For 2.0 kΩ of feedback
resistance, the MC34071 series can settle to within 1/2 LSB
of 8 bits in 1.0 µs, and within 1/2 LSB of 12–bits in 2.2 µs
for a 10 V step. In a inverting unity gain fast settling
configuration, the symmetrical slew rate is ±13 V/µs. In the
classic noninverting unity gain configuration, the output
positive slew rate is +10 V/µs, and the corresponding
negative slew rate will exceed the positive slew rate as a
function of the fall time of the input waveform.
Since the bipolar input device matching characteristics
are superior to that of JFETs, a low untrimmed maximum
offset voltage of 3.0 mV prime and 5.0 mV downgrade can
be economically offered with high frequency performance
characteristics. This combination is ideal for low cost
precision, high speed quad op amp applications.
The all NPN output stage, shown in its basic form on the
equivalent circuit schematic, offers unique advantages over
the more conventional NPN/PNP transistor Class AB
output stage. A 10 kΩ load resistance can swing within 1.0
V of the positive rail (VCC), and within 0.3 V of the negative
rail (VEE), providing a 28.7 Vpp swing from ±15 V supplies.
This large output swing becomes most noticeable at lower
supply voltages.
The positive swing is limited by the saturation voltage of
the current source transistor Q7, and VBE of the NPN pull up
transistor Q17, and the voltage drop associated with the short
circuit resistance, R7. The negative swing is limited by the
saturation voltage of the pull–down transistor Q16, the
voltage drop ILR6, and the voltage drop associated with
resistance R7, where IL is the sink load current. For small
valued sink currents, the above voltage drops are negligible,
allowing the negative swing voltage to approach within
millivolts of VEE. For large valued sink currents (>5.0 mA),
diode D3 clamps the voltage across R6, thus limiting the
negative swing to the saturation voltage of Q16, plus the
forward diode drop of D3 (≈VEE +1.0 V). Thus for a given
supply voltage, unprecedented peak–to–peak output voltage
swing is possible as indicated by the output swing
specifications.
If the load resistance is referenced to VCC instead of
ground for single supply applications, the maximum
possible output swing can be achieved for a given supply
voltage. For light load currents, the load resistance will pull
the output to VCC during the positive swing and the output
will pull the load resistance near ground during the negative
swing. The load resistance value should be much less than
that of the feedback resistance to maximize pull up
capability.
Because the PNP output emitter–follower transistor has
been eliminated, the MC34071 series offers a 20 mA
minimum current sink capability, typically to an output
voltage of (VEE +1.8 V). In single supply applications the
output can directly source or sink base current from a
common emitter NPN transistor for fast high current
switching applications.
In addition, the all NPN transistor output stage is
inherently fast, contributing to the bipolar amplifier’s high
gain bandwidth product and fast settling capability. The
associated high frequency low output impedance (30 Ω typ
@ 1.0 MHz) allows capacitive drive capability from 0 pF to
10,000 pF without oscillation in the unity closed loop gain
configuration. The 60° phase margin and 12 dB gain margin
as well as the general gain and phase characteristics are
virtually independent of the source/sink output swing
conditions. This allows easier system phase compensation,
since output swing will not be a phase consideration. The
high frequency characteristics of the MC34071 series also
allow excellent high frequency active filter capability,
especially for low voltage single supply applications.
Although the single supply specifications is defined at
5.0 V, these amplifiers are functional to 3.0 V @ 25°C
although slight changes in parametrics such as bandwidth,
slew rate, and DC gain may occur.
If power to this integrated circuit is applied in reverse
polarity or if the IC is installed backwards in a socket, large
unlimited current surges will occur through the device that
may result in device destruction.
Special static precautions are not necessary for these
bipolar amplifiers since there are no MOS transistors on
the die.
As with most high frequency amplifiers, proper lead
dress, component placement, and PC board layout should
be exercised for optimum frequency performance. For
example, long unshielded input or output leads may result in
unwanted input–output coupling. In order to preserve the
relatively low input capacitance associated with these
amplifiers, resistors connected to the inputs should be
immediately adjacent to the input pin to minimize additional
stray input capacitance. This not only minimizes the input
pole for optimum frequency response, but also minimizes
extraneous “pick up” at this node. Supply decoupling with
adequate capacitance immediately adjacent to the supply pin
is also important, particularly over temperature, since many
types of decoupling capacitors exhibit great impedance
changes over temperature.
The output of any one amplifier is current limited and thus
protected from a direct short to ground. However, under
such conditions, it is important not to allow the device to
exceed the maximum junction temperature rating. T ypically
for ±15 V supplies, any one output can be shorted
continuously to ground without exceeding the maximum
temperature rating.
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11
MC34071,2,4,A MC33071,2,4,A
(T ypical Single Supply Applications VCC = 5.0 V)
Figure 37. AC Coupled Noninverting AmpliferFigure 38. AC Coupled Inverting Amplifier
V
CC
V
5.1 M
20 k
in
36.6 mV
C
in
1.0 M
pp
1.0 k
V
O
0
+
MC34071
–
100 k
AV = 101
BW (–3.0 dB) = 45 kHz
3.7 V
pp
V
CC
0
100 k
C
V
O
O
10 k
R
L
68 k
C
in
Vin 370 mV
10 k
pp
+
MC34071
–
100 k
C
O
AV = 10 BW (–3.0 dB) = 450 kHz
3.7 V
10 k
R
L
pp
V
O
Figure 39. DC Coupled Inverting Amplifer
Maximum Output Swing
V
O
2.63 V
4.75 V
pp
91 k
5.1 k
V
in
100 k
+
MC34071
–
BW (–3.0 dB) = 450 kHz
Figure 41. Active High–Q Notch Filter
Vin ≥ 0.2 Vdc
V
in
16 k
2.0 C
0.02
0.01
32 k
RR
16 k
C
2.0 R
2.0 C
0.02
–
MC34071
+
1.0 M
AV = 10
fo = 1.0 kHz
fo =
1
4πRC
V
5.1 k
R
L
O
Figure 40. Unity Gain Buffer TTL Driver
2.5 V
V
CC
V
O
00 to 10,000 pF
V
+
in
MC34071
–
Cable
MC54/74XX
TTL Gate
Figure 42. Active Bandpass Filter
2H
R3
2.2 k
–
MC34071
+
V
CC
fo = 30 kHz
Qof
Ho = 10
Ho = 1.0
o
0.4 V
CC
o
4Q2R1–R3
GBW
< 0.1
V
O
C
R2
0.047
C
0.047
R1
V
in
1.1 k
5.6 k
Given fo = Center Frequency
AO = Gain at Center Frequency
Choose Value fo, Q, Ao, C
Then:
QR3R1 R3
R3 = R1 = R2 =
πfoC
For less than 10% error from operational amplifier
where fo and GBW are expressed in Hz.
GBW = 4.5 MHz Typ.
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12
MC34071,2,4,A MC33071,2,4,A
Figure 43. Low Voltage Fast D/A ConverterFigure 44. High Speed Low Voltage Comparator
C
F
V
in
Bit
Switches
10 k
10 k10 k
(R–2R) Ladder Network
Settling Time
1.0 µs (8–Bits, 1/2 LSB)
Figure 45. LED DriverFigure 46. Transistor Driver
V
in
V
ref
5.0 k5.0 k
+
MC34071
–
5.0 k
R
F
–
MC34071
+
V
CC
“ON”
Vin < V
“ON”
Vin > V
V
O
V
CC
ref
ref
V
in
+
MC34071
–
2.0 k
R
1.0 V
+
MC34071MC34071
–
L
V
CC
(A) PNP(B) NPN
2.0 V
V
O
V
O
4.0 V
13 V/µs
0.1
Delay
1.0 µs
+
–
R
L
t
0.2 µs
Delay
25 V/µs
V
R
L
t
CC
Figure 47. AC/DC Ground Current MonitorFigure 48. Photovoltaic Cell Amplifier
I
Load
R
F
–
MC34071
+
VO = I
Cell RF
VO > 0.1 V
Ground Current
Sense Resistor
+
MC34071
–
R
S
R1
R2
VO = I
BW ( –3.0 dB) = GBW
Load RS
For VO > 0.1V
V
O
R1
1+
R2
R2
R1+R2
I
Cell
V
= 0 V
Cell
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13
V
O
MC34071,2,4,A MC33071,2,4,A
Figure 49. Low Input Voltage Comparator
with Hysteresis
V
R2
V
R1
ref
MC34071
V
in
V
V
VH =(V
R1
=(V
inL
R1+R2
=(VOH–V
inH
R1+R2
R1
R1+R
OL–Vref
R1
OH
+
–
ref
–VOL)
)+V
)+V
V
OH
V
OL
ref
ref
Figure 51. High Input Impedance
Differential Amplifier
R1R2
–
1/2
MC34072
+V1
+V2
R2R4
=
VO = 1V2–V1
For (V2 ≥ V1), V > 0
+
(Critical to CMRR)
R3R1
R4
+
R3
R3
R4
R3
O
R4
–
1/2
MC34072
+
Hysteresis
V
inLVinH
V
ref
Figure 50. High Compliance V oltage to
Sink Current Converter
I
out
V
in
V
in
I
out
=
+
MC34071
–
Vin±V
R
IO
R
Figure 52. Bridge Current Amplifier
+V
ref
R
F
RR
V
O
R = ∆R
∆R < < R
RF > > R
R
R
F
–
MC34071
+
VO = V
(VO ≥ 0.1 V)
V
O
∆R R
F
ref
2
2R
Figure 53. Low V oltage Peak Detector
V
in
+
MC34071
–
V
R
L
in
V
V
P
t
VO = Vin (pk)
+
10,000 pF
P
f
OSC
Figure 54. High Frequency Pulse
Width Modulation
0.85
^
RC
V
V
P
t
R
–
1/2
OSC
MC34072
100 k
47 k
V
P
Comparator
C
V+
100 k
+
I
B
0
–
+
1/2
MC34072
–+
Control Group
I
SC
±I
B
Pulse Width
High Current
+
t
Base Charge
Removal
I
out
Output
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14
MC34071,2,4,A MC33071,2,4,A
GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = ±15.0 V
Figure 55. Second Order Low–Pass Active FilterFigure 56. Second Order High–Pass Active Filter
R1
560510
C1
0.44
R2 =
R3
Ǹ
2
C2
0.02
R2
5.6 k
–
MC34071
+
Choose: fo, Ho, C2
Then: C1 = 2C2 (Ho+1)
R2
R3 =R1 =
Ho+14πfoC2
fo = 1.0 kHz
Ho = 10
R2
H
o
C2
0.05
C1
1.0
Choose: fo, Ho, C1
R2
1.1 k
C1
1.0
R1
46.1 k
–
MC34071
+
Then: R1 =
R2 =
C2 =
Figure 57. Fast Settling InverterFigure 58. Basic Inverting Amplifier
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MINMAX
A1.351.75
A10.100.25
B0.350.49
C0.180.25
D4.805.00
E
3.804.00
1.27 BSCe
H5.806.20
h
0.250.50
L0.401.25
0 7
q
INCHESMILLIMETERS
__
__
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18
MC34071,2,4,A MC33071,2,4,A
P ACKAGE DIMENSIONS
148
B
17
A
F
C
N
SEATING
HGD
PLANE
K
P SUFFIX
PLASTIC PACKAGE
CASE 646–06
ISSUE L
L
J
M
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
DIM MINMAXMINMAX
A 0.715 0.770 18.16 19.56
B 0.240 0.2606.106.60
C 0.145 0.1853.694.69
D 0.015 0.0210.380.53
F 0.040 0.0701.021.78
G0.100 BSC2.54 BSC
H 0.052 0.0951.322.41
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability ,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer .
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