ON Semiconductor MC34071, MC34072, MC34074, MC3407A, MC33071 Technical data

...
MC34071,2,4,A MC33071,2,4,A
High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers
The MC33071/72/74, MC34071/72/74 series of devices are available in standard or prime performance (A Suffix) grades and are specified over the commercial, industrial/vehicular or military temperature ranges. The complete series of single, dual and quad operational amplifiers are available in plastic DIP, SOIC and TSSOP surface mount packages.
Wide Bandwidth: 4.5 MHz
High Slew Rate: 13 V/µs
Fast Settling Time: 1.1 µs to 0.1%
Wide Single Supply Operation: 3.0 V to 44 V
Wide Input Common Mode Voltage Range: Includes Ground (V
Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)
Large Output Voltage Swing: –14.7 V to +14 V (with ±15 V
Supplies)
Large Capacitance Drive Capability: 0 pF to 10,000 pF
Low Total Harmonic Distortion: 0.02%
Excellent Phase Margin: 60°
Excellent Gain Margin: 12 dB
Output Short Circuit Protection
ESD Diodes/Clamps Provide Input Protection for Dual and Quad
EE)
8
P SUFFIX
CASE 626
14
1
P SUFFIX
CASE 646
Output 1
Inputs 1
Inputs 2
Output 2
http://onsemi.com
8
1
1
SO–8 D SUFFIX CASE 751
PIN CONNECTIONS
Offset Null
Inputs
1 2
– +
3 4
V
EE
(Single, Top View)
1
Output 1 V
2
Inputs 1
3 4
V
EE
(Dual, Top View)
14
TSSOP–14
DTB SUFFIX
CASE 948G
+
1
8
NC
7
V
6
Output
5
Offset Null
8
CC
7
Output 2
6
– +
5
14
SO–14
D SUFFIX
CASE 751A
CC
Inputs 2
1
PIN CONNECTIONS
1
2
1
– +
3 4
V
CC
5
2
+ –
6
78
14
Output 4
13
4
Inputs 4
+
12 11
V
EE
3
10
+
Inputs 3
9
Output 3
Semiconductor Components Industries, LLC, 1999
October, 1999 – Rev. 2
(Quad, T op View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet.
1 Publication Order Number:
MC34071/D
Inputs
MC34071,2,4,A MC33071,2,4,A
Representative Schematic Diagram
(Each Amplifier)
V
CC
Q2
Q3 Q4
R1
Q8
Q9
C1
R2
Q10
Q1
Bias
+
Q5
Q11
Q6
C2
Q7
D2
Q17
R6 R7
D3
Q18
Output
R8
Q19
Base
Current
Cancellation
Offset Null
(MC33071, MC34071 only)
Q13
Q12
D1
R3 R4
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (from VEE to VCC) V Input Differential Voltage Range V Input Voltage Range V Output Short Circuit Duration (Note 2) t Operating Junction Temperature T Storage Temperature Range T
NOTES: 1.Either or both input voltages should not exceed the magnitude of VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 1).
S
IDR
IR
SC
J
stg
+44 V Note 1 V Note 1 V
Indefinite sec
+150 °C
–60 to +150 °C
Q14
Q15 Q16
R5
Current
Limit
VEE/Gnd
http://onsemi.com
2
MC34071,2,4,A MC33071,2,4,A
ELECTRICAL CHARACTERISTICS (V
TA = T
Input Offset Voltage (RS = 100 , VCM = 0 V, VO = 0 V)
Average Temperature Coefficient of Input Offset Voltage
Input Bias Current (VCM = 0 V, VO = 0 V)
Input Offset Current (VCM = 0 V, VO = 0V)
Input Common Mode Voltage Range
Large Signal Voltage Gain (VO = ±10 V, RL = 2.0 kΩ)
Output Voltage Swing (VID = ±1.0 V)
Output Short Circuit Current (VID = 1.0 V, VO = 0 V,
Common Mode Rejection
Power Supply Rejection (RS = 100 Ω)
Power Supply Current (Per Amplifier, No Load)
NOTES: 3.T
to T
low
VCC = +15 V, VEE = –15 V, TA = +25°C VCC = +5.0 V, VEE = 0 V, TA = +25°C VCC = +15 V, VEE = –15 V, TA = T
RS = 10 , VCM = 0 V, VO = 0 V,
TA = T
TA = +25°C TA = T
low
TA = +25°C TA = T
low
TA = +25°C TA = T
low
TA = +25°C TA = T
low
VCC = +5.0 V, VEE = 0 V, RL = 2.0 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
VCC = +5.0 V, VEE = 0 V, RL = 2.0 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 10 kΩ, TA = +25°C VCC = +15 V, VEE = –15 V, RL = 2.0 kΩ,
TA = T
TA = 25°C)
Source Sink
RS 10 k, VCM = V
VCC/VEE = +16.5 V/–16.5 V to +13.5 V/–13.5 V ,
TA = 25°C
VCC = +5.0 V, VEE = 0 V, VO = +2.5 V, TA = +25°C VCC = +15 V, VEE = –15 V, VO = 0 V, TA = +25°C VCC = +15 V, VEE = –15 V, VO = 0 V,
TA = T
low
)
high
Characteristics Symbol Min Typ Max Min Typ Max Unit
low
to T
low
high
to T
high
to T
high
to T
high
to T
high
to T
low
high
to T
low
high
, TA = 25°C
ICR
to T
low
high
= –40°C for MC33071, 2, 4, /A T =0°C for MC34071, 2, 4, /A = +70°C for MC34071, 2, 4, /A
= +15 V , VEE = –15 V , RL = connected to ground, unless otherwise noted. See Note 3 for
CC
to T
high
A Suffix Non–Suffix
V
IO
VIO/T 10 10 µV/°C
I
IB
I
IO
V
ICR
A
VOL
V
OH
V
OL
I
SC
CMR 80 97 70 97 dB
PSR 80 97 70 97 dB
I
D
= +85°C for MC33071, 2, 4, /A
high
— —
— —
— —
50 25
3.7
13.6
13.4
— — —
10 20
— — —
0.5
0.5 —
100
6.0 —
VEE to (VCC –1.8) VEE to (VCC –2.2)
100
4.0 14 —
0.1
–14.7
30 30
1.6
1.9 —
3.0
3.0
5.0
500 700
50
300
— —
— — —
0.3 –14.3 –13.5
— —
2.0
2.5
2.8
— — —
— —
— —
25 20
3.7
13.6
13.4
— — —
10 20
— — —
1.0
1.5 —
100
6.0 —
VEE to (VCC –1.8) VEE to (VCC –2.2)
100
4.0 14 —
0.1
–14.7
30 30
1.6
1.9 —
5.0
5.0
7.0
500 700
75
300
— —
— — —
0.3 –14.3 –13.5
— —
2.0
2.5
2.8
mV
nA
nA
V
V/mV
V
V
mA
mA
http://onsemi.com
3
MC34071,2,4,A MC33071,2,4,A
AC ELECTRICAL CHARACTERISTICS (V
Characteristics Symbol Min Typ Max Min Typ Max Unit
Slew Rate (Vin = –10 V to +10 V, RL = 2.0 kΩ, CL = 500 pF)
AV = +1.0 AV = –1.0
Setting Time (10 V Step, AV = –1.0)
To 0.1% (+1/2 LSB of 9–Bits)
To 0.01% (+1/2 LSB of 12–Bits) Gain Bandwidth Product (f = 100 kHz) GBW 3.5 4.5 3.5 4.5 MHz Power Bandwidth
AV = +1.0, RL = 2.0 kΩ, VO = 20 Vpp, THD = 5.0% Phase margin
RL = 2.0 k
RL = 2.0 kΩ, CL = 300 pF Gain Margin
RL = 2.0 k
RL = 2.0 kΩ, CL = 300 pF Equivalent Input Noise Voltage
RS = 100 , f = 1.0 kHz Equivalent Input Noise Current
f = 1.0 kHz Differential Input Resistance
VCM = 0 V Differential Input Capacitance
VCM = 0 V Total Harmonic Distortion
AV = +10, RL = 2.0 kΩ, 2.0 Vpp VO 20 Vpp, f = 10 kHz Channel Separation (f = 10 kHz) 120 120 dB Open Loop Output Impedance (f = 1.0 MHz) |ZO| 30 30 W
= +15 V, VEE = –15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)
CC
A Suffix Non–Suffix
SR
t
s
BW 160 160 kHz
f
m
A
m
e
n
i
n
R
in
C
in
THD 0.02 0.02 %
8.0 —
— —
— —
— —
32 32
0.22 0.22
150 150 M
2.5 2.5 pF
10 13
1.1
2.2
60 40
12
4.0
— —
— —
— —
— —
8.0 —
— —
— —
— —
10 13
1.1
2.2
60 40
12
4.0
— —
— —
— —
— —
V/µs
nV/ Hz√
pA/ Hz√
µs
Deg
dB
Figure 1. Power Supply Configurations Figure 2. Offset Null Circuit
V
Single Supply Split Supplies
3.0 V to 44 V VCC+|VEE|44 V
V
CC
1
2
3
4
V
EE
V
CC
V
EE
V
1
2
3
4
V
CC
Offset nulling range is approximately ±80 mV with a 10 k potentiometer (MC33071, MC34071 only).
EE
CC
7
2
3
+
4
V
EE
http://onsemi.com
4
6
5
1
10 k
MC34071,2,4,A MC33071,2,4,A
5
Figure 3. Maximum Power Dissipation versus
T emperature for Package Types
2400
2000
1600
1200
D
P , MAXIMUM POWER DISSIPATION (mW)
SO–14 Pkg
800
400
0
–55 –40 –20 0 20 40 60 80 100 120 140 160
8 & 14 Pin Plastic Pkg
SO–8 Pkg
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Input Common Mode V oltage
Range versus T emperature
V
CC
V
VCC/VEE = +1.5 V/ –1.5 V to +22 V/ –22 V
CC
VCC –0.8
VCC –1.6
VCC –2.4
Figure 4. Input Offset Voltage versus
T emperature for Representative Units
4.0
2.0
0
–2.0
IO
V
–4.0
V , INPUT OFFSET VOLTAGE (mV)
–55 –25 0 25 50 75 100 12
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Normalized Input Bias Current
versus T emperature
1.3
1.2
1.1
1.0
0.9
VCC = +15 V VEE = –15 V VCM = 0
VCC = +15 V VEE = –15 V VCM = 0
VEE +0.01
V
EE
–55 –25 0 25 50 75 100 125
1.4
1.2
1.0
0.8
IB
I , INPUT BIAS CURRENT (NORMALIZED)
0.6
V
EE
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Normalized Input Bias Current versus
Input Common Mode Voltage
VCC = +15 V VEE = –15 V TA = 25°C
–12 –8.0 –4.0 0 4.0 8.0 12
VIC, INPUT COMMON MODE VOLTAGE (V)
0.8
IB
I , INPUT BIAS CURRENT (NORMALIZED)
0.7 –55 –25 0 25 50 75 100 125
ICR
V , INPUT COMMON MODE VOLTAGE RANGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Split Supply Output Voltage
Swing versus Supply V oltage
50
)
, OUTPUT VOLTAGE SWING (V V
RL Connected to Ground TA = 25°C
pp
40
30
20
10
O
0
0 5.0 10 15 20 25
RL = 10 k
VCC, |VEE|, SUPPLY VOLTAGE (V)
RL = 2.0 k
http://onsemi.com
5
MC34071,2,4,A MC33071,2,4,A
Figure 9. Single Supply Output Saturation
versus Load Resistance to V
V
VCC –1.0
VCC –2.0
VEE +2.0
VEE +1.0
sat
V , OUTPUT SATURATION VOLTAGE (V)
CC
V
V
EE
0 5.0 10 15 20
VCC/VEE = +5.0 V/ –5.0 V to +22 V/ –22 V TA = 25°C
CC
Source
Sink
V
EE
IL, LOAD CURRENT (±mA)
Figure 11. Single Supply Output Saturation
versus Load Resistance to Ground
0
V
–0.4
–0.8
2.0
1.0
sat
V , OUTPUT SATURATION VOLTAGE (V)
100 1.0 k 10 k 100 k
CC
VCC = +15 V RL to V TA = 25°C
Gnd
RL, LOAD RESISTANCE TO VCC (Ω)
CC
CC
Figure 10. Split Supply Output Saturation
versus Load Current
V
CC
VCC–2.0
VCC–4.0
0.2
0.1
sat
V , OUTPUT SATURATION VOLTAGE (V)
0
100 1.0 k 10 k 100 k
RL, LOAD RESISTANCE TO GROUND (Ω)
Gnd
V
CC
Figure 12. Output Short Circuit Current
versus T emperature
60
50
40
30
20
SC
10
I , OUTPUT CURRENT (mA)
0
–55 –25 0 25 50 75 100 125
Source
TA, AMBIENT TEMPERATURE (°C)
Sink
VCC = +15 V VEE = –15 V RL 0.1 Vin = 1.0 V
VCC = +15 V RL = Gnd TA = 25°C
Figure 13. Output Impedance
versus Frequency
50
VCC = +15 V VEE = –15 V
40
VCM = 0 VO = 0 IO = ±0.5 mA
30
TA = 25°C
20
AV = 1000
10
O
Z , OUTPUT IMPEDANCE ( )
0
1.0 k 10 k 100 1.0 M 10 M
AV = 100 AV = 10 AV = 1.0
f, FREQUENCY (Hz)
28
)
24
pp
20 16 12
8.0
4.0
, OUTPUT VOLTAGE SWING (V
O
V
0
http://onsemi.com
6
Figure 14. Output Voltage Swing
versus Frequency
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k THD 1.0% TA = 25°C
3.0 k 10 k 30 k 100 k 300 k 1.0 M 3.0 M f, FREQUENCY (Hz)
MC34071,2,4,A MC33071,2,4,A
5
A,
O
E
LOO
OL
AGE
GAI
(
B)
,
O
AL
AR
O
IC
IS
OR
IO
(
)
A,
O
E
LOO
OL
AGE
GAI
(
B)
Figure 15. T otal Harmonic Distortion
versus Frequency
0.4
% N
T
0.3
T D
N
0.2
M H
0.1
T T
THD
0
10 100 1.0 k 10 k 100 k
AV = 1000
AV = 100
AV = 10
f, FREQUENCY (Hz)
VCC = +15 V VEE = –15 V VO = 2.0 V RL = 2.0 k TA = 25°C
AV = 1.0
Figure 17. Open Loop Voltage Gain
versus T emperature
116
d N
T P V
N P
VCC = +15 V
112
VEE = –15 V VO= –10 V to +10 V RL = 10 k
108
f 10Hz
104
100
VOL
96
–55 –25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 16. T otal Harmonic Distortion
versus Output Voltage Swing
4.0 VCC = +15 V
VEE = –15 V
3.0
AV = 1000
pp
2.0
AV = 100
1.0
THD, TOTAL HARMONIC DISTORTION (%)
0
AV = 10 AV = 1.0
0 4.0 8.0 12 16 20
VO, OUTPUT VOLTAGE SWING (Vpp)
RL = 2.0 k TA = 25°C
Figure 18. Open Loop Voltage Gain and
Phase versus Frequency
100
0
80
Phase
60
40
VCC = +15 V VEE = –15 V
20
VO = 0 V RL = 2.0 k
VOL
TA = 25°C
A , OPEN LOOP VOLTAGE GAIN (dB)
0
1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M 100 M
Gain
f, FREQUENCY (Hz)
Phase Margin
= 60°
45
90
135
, EXCESS PHASE (DEGREES)
φ
180
Figure 19. Open Loop Voltage Gain and
Phase versus Frequency
20
d N
10
0
T
–10
P V
1. Phase RL = 2.0 k
2. Phase RL = 2.0 k, CL = 300 pF
N
–20
3. Gain RL = 2.0 k
P
4. Gain RL = 2.0 k, CL = 300 pF VCC = +15 V
–30
VEE = 15 V
VOL
VO = 0 V TA = 25°C
–40
1.0 2.0 3.0 5.0 7.0 10 20 30
1
Phase Margin = 60°
f, FREQUENCY (MHz)
Gain Margin = 12 dB
2
100
120
140
160
3
180
4
, EXCESS PHASE (DEGREES)
φ
GBW, GAIN BANDWIDTH PRODUCT (NORMALIED)
http://onsemi.com
7
Figure 20. Normalized Gain Bandwidth
Product versus T emperature
1.15
1.1
1.05
1.0
0.95
0.9
0.85 –55 –25 0 25 50 75 100 12
TA, AMBIENT TEMPERATURE (°C)
VCC = +15 V VEE = –15 V RL = 2.0 k
MC34071,2,4,A MC33071,2,4,A
Figure 21. Percent Overshoot versus
Load Capacitance
100
VCC = +15 V VEE = –15 V
80
RL = 2.0 k VO = –10 V to +10 V TA = 25°C
60
40
PERCENT OVERSHOOT
20
0
10 100 1.0 k 10 k
CL, LOAD CAPACITANCE (pF)
70 60
50 40 30 20
, PHASE MARGIN (DEGREES)φ
m
10
0
Figure 22. Phase Margin versus
Load Capacitance
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V TA = 25°C
10 100 1.0 k 10 k
CL, LOAD CAPACITANCE (pF)
Figure 23. Gain Margin versus Load Capacitance Figure 24. Phase Margin versus Temperature
14 12
10
8.0
6.0
m
4.0
A , GAIN MARGIN (dB)
2.0
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V TA = 25°C
80
CL = 10 pF
60
40
20
, PHASE MARGIN (DEGREES)φ
m
CL = 100 pF
CL = 1,000 pF
CL = 10,000 pF
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V
R
0
10 100 1.0 k 10 k
CL, LOAD CAPACITANCE (pF)
Figure 25. Gain Margin versus T emperature
16
VCC = +15 V
12
VEE = –15 V AV = +1.0 RL = 2.0 k to VO = –10 V to +10 V
8.0
m
4.0
A , GAIN MARGIN (dB)
0
–55 –25 0 25 50 75 100
CL = 1,000 pF
TA, AMBIENT TEMPERATURE (°C)
CL = 10 pF
CL = 100 pF
CL = 10,000 pF
125
0
–55 –25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 26. Phase Margin and Gain Margin
versus Differential Source Resistance
12 10
8.0
6.0
4.0
2.0
m
A , GAIN MARGIN (dB)
R
1
V
O
– +
R
2
VCC = +15 V VEE = –15 V RT = R1 + R AV = +100
0
VO = 0 V TA = 25°C
1.0 100 1.0 k 10 k10 100 k
2
RT, DIFFERENTIAL SOURCE RESISTANCE (Ω)
Gain
Phase
70 60 50 40 30 20
, PHASE MARGIN (DEGREES)φ
m
10 0
http://onsemi.com
8
SR,
SLE
RA
E
(
OR
ALI
E
)
C
R,
CO
O
O
E
RE
EC
IO
(
B)
MC34071,2,4,A MC33071,2,4,A
Figure 27. Normalized Slew Rate
versus T emperature
1.15
D Z
M N
T W
1.1
1.05
1.0
0.95
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 500 pF
0.9
0.85 –55 –25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
10
5.0
0
–5.0
O
V , OUTPUT VOLTAGE SWING FROM 0 V (V)
–10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Figure 29. Small Signal Transient Response Figure 30. Large Signal Transient Reponse
Figure 28. Output Settling Time
10 mV
10 mV
1.0 mV
1.0 mV
1.0 mV
1.0 mV
ts, SETTLING TIME (µs)
VCC = +15 V VEE = –15 V AV = –1.0 TA = 25°C
Compensated
Uncompensated
0
50 mV/DIV
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 300 pF TA = 25°C
2.0 µs/DIV
Figure 31. Common Mode Rejection
versus Frequency
100 d N
T J
TA = 25°C
80
TA = –55°C
60
D N M
40
V
MM
M
20
CM
CMR = 20 Log
0
0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M
TA = 125°C
– A
DM
+
V
V
CM
V
x A
O
f, FREQUENCY (Hz)
VCC = +15 V VEE = –15 V VCM = 0 V VCM = ±1.5 V
O
DM
VCC = +15 V VEE = –15 V AV = +1.0 RL = 2.0 k CL = 300 pF
0
TA = 25°C
5.0 V/DIV
1.0 µs/DIV
Figure 32. Power Supply Rejection
versus Frequency
100
80
V
CC
60
40
20
PSR, POWER SUPPLY REJECTION (dB)
0
A
DM
+
+PSR = 20 Log
–PSR = 20 Log
V
V
O
EE
VO/A
DM
V
CC
VO/A
DM
V
EE
0.1 1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M f, FREQUENCY (Hz)
VCC = +15 V VEE = –15 V TA = 25°C
(VCC = +1.5 V)
–PSR
(VEE = +1.5 V)
+PSR
http://onsemi.com
9
MC34071,2,4,A MC33071,2,4,A
Figure 33. Supply Current versus
Supply V oltage
9.0
8.0
7.0
6.0
CC
5.0
I , SUPPLY CURRENT (mA)
4.0 0 5.0 10 15 20 25
TA = –55°C
TA = 25°C
TA = 125°C
VCC, |VEE|, SUPPLY VOLTAGE (V)
105
95
85
75
PSR, POWER SUPPLY REJECTION (dB)
65
–55 –25 0 25 50 75 100 125
Figure 34. Power Supply Rejection
versus T emperature
(VEE = +1.5 V)
–PSR
(VCC = +1.5 V)
+PSR
VO/A
+PSR = 20 Log
–PSR = 20 Log
TA, AMBIENT TEMPERATURE (°C)
V
VO/A
V
DM
CC
DM
EE
Figure 35. Channel Separation versus Frequency Figure 36. Input Noise versus Frequency
120
VCC = +15 V
100
VEE = –15 V TA = 25°C
80
60
40
CHANNEL SEPARATION (dB)
20
0
10 20 30 50 70 100 200 300
f, FREQUENCY (kHz)
70
Hz )
60
nV
50 40 30 20 10
n
e , INPUT NOICE VOLTAGE (
0
10 100 1.0 k 10 k 100 k
Voltage
Current
f, FREQUENCY (kHz)
VCC = +15 V VEE = –15 V VCM = 0 TA = 25°C
VCC = +15 V VEE = –15 V
V
A
DM
+
V
CC
EE
V
2.8
2.4
2.0
1.6
1.2
0.8
0.4 0
O
Hz
n
i , INPUT NOISE CURRENT (pA )
APPLICATIONS INFORMATION
CIRCUIT DESCRIPTION/PERFORMANCE FEA TURES
Although the bandwidth, slew rate, and settling time of the MC34071 amplifier series are similar to op amp products utilizing JFET input devices, these amplifiers offer other additional distinct advantages as a result of the PNP transistor differential input stage and an all NPN transistor output stage.
Since the input common mode voltage range of this input stage includes the VEE potential, single supply operation is feasible to as low as 3.0 V with the common mode input voltage at ground potential.
The input stage also allows differential input voltages up to ±44 V, provided the maximum input voltage range is not exceeded. Specifically, the input voltages must range between VEE and VCC supply voltages as shown by the maximum rating table. In practice, although not recommended, the input voltages can exceed the V voltage by approximately 3.0 V and decrease below the V
CC
EE
voltage by 0.3 V without causing product damage, although output phase reversal may occur. It is also possible to source
http://onsemi.com
up to approximately 5.0 mA of current from VEE through either inputs clamping diode without damage or latching, although phase reversal may again occur.
If one or both inputs exceed the upper common mode voltage limit, the amplifier output is readily predictable and may be in a low or high state depending on the existing input bias conditions.
Since the input capacitance associated with the small geometry input device is substantially lower (2.5 pF) than the typical JFET input gate capacitance (5.0 pF), better frequency response for a given input source resistance can be achieved using the MC34071 series of amplifiers. This performance feature becomes evident, for example, in fast settling D–to–A current to voltage conversion applications where the feedback resistance can form an input pole with the input capacitance of the op amp. This input pole creates a 2nd order system with the single pole op amp and is therefore detrimental to its settling time. In this context, lower input capacitance is desirable especially for higher
10
MC34071,2,4,A MC33071,2,4,A
values of feedback resistances (lower current DACs). This input pole can be compensated for by creating a feedback zero with a capacitance across the feedback resistance, if necessary, to reduce overshoot. For 2.0 k of feedback resistance, the MC34071 series can settle to within 1/2 LSB of 8 bits in 1.0 µs, and within 1/2 LSB of 12–bits in 2.2 µs for a 10 V step. In a inverting unity gain fast settling configuration, the symmetrical slew rate is ±13 V/µs. In the classic noninverting unity gain configuration, the output positive slew rate is +10 V/µs, and the corresponding negative slew rate will exceed the positive slew rate as a function of the fall time of the input waveform.
Since the bipolar input device matching characteristics are superior to that of JFETs, a low untrimmed maximum offset voltage of 3.0 mV prime and 5.0 mV downgrade can be economically offered with high frequency performance characteristics. This combination is ideal for low cost precision, high speed quad op amp applications.
The all NPN output stage, shown in its basic form on the equivalent circuit schematic, offers unique advantages over the more conventional NPN/PNP transistor Class AB output stage. A 10 k load resistance can swing within 1.0 V of the positive rail (VCC), and within 0.3 V of the negative rail (VEE), providing a 28.7 Vpp swing from ±15 V supplies. This large output swing becomes most noticeable at lower supply voltages.
The positive swing is limited by the saturation voltage of the current source transistor Q7, and VBE of the NPN pull up transistor Q17, and the voltage drop associated with the short circuit resistance, R7. The negative swing is limited by the saturation voltage of the pull–down transistor Q16, the voltage drop ILR6, and the voltage drop associated with resistance R7, where IL is the sink load current. For small valued sink currents, the above voltage drops are negligible, allowing the negative swing voltage to approach within millivolts of VEE. For large valued sink currents (>5.0 mA), diode D3 clamps the voltage across R6, thus limiting the negative swing to the saturation voltage of Q16, plus the forward diode drop of D3 (≈VEE +1.0 V). Thus for a given supply voltage, unprecedented peak–to–peak output voltage swing is possible as indicated by the output swing specifications.
If the load resistance is referenced to VCC instead of ground for single supply applications, the maximum possible output swing can be achieved for a given supply voltage. For light load currents, the load resistance will pull the output to VCC during the positive swing and the output will pull the load resistance near ground during the negative swing. The load resistance value should be much less than that of the feedback resistance to maximize pull up capability.
Because the PNP output emitter–follower transistor has been eliminated, the MC34071 series offers a 20 mA
minimum current sink capability, typically to an output voltage of (VEE +1.8 V). In single supply applications the output can directly source or sink base current from a common emitter NPN transistor for fast high current switching applications.
In addition, the all NPN transistor output stage is inherently fast, contributing to the bipolar amplifier’s high gain bandwidth product and fast settling capability. The associated high frequency low output impedance (30 typ @ 1.0 MHz) allows capacitive drive capability from 0 pF to 10,000 pF without oscillation in the unity closed loop gain configuration. The 60° phase margin and 12 dB gain margin as well as the general gain and phase characteristics are virtually independent of the source/sink output swing conditions. This allows easier system phase compensation, since output swing will not be a phase consideration. The high frequency characteristics of the MC34071 series also allow excellent high frequency active filter capability, especially for low voltage single supply applications.
Although the single supply specifications is defined at
5.0 V, these amplifiers are functional to 3.0 V @ 25°C although slight changes in parametrics such as bandwidth, slew rate, and DC gain may occur.
If power to this integrated circuit is applied in reverse polarity or if the IC is installed backwards in a socket, large unlimited current surges will occur through the device that may result in device destruction.
Special static precautions are not necessary for these bipolar amplifiers since there are no MOS transistors on the die.
As with most high frequency amplifiers, proper lead dress, component placement, and PC board layout should be exercised for optimum frequency performance. For example, long unshielded input or output leads may result in unwanted input–output coupling. In order to preserve the relatively low input capacitance associated with these amplifiers, resistors connected to the inputs should be immediately adjacent to the input pin to minimize additional stray input capacitance. This not only minimizes the input pole for optimum frequency response, but also minimizes extraneous “pick up” at this node. Supply decoupling with adequate capacitance immediately adjacent to the supply pin is also important, particularly over temperature, since many types of decoupling capacitors exhibit great impedance changes over temperature.
The output of any one amplifier is current limited and thus protected from a direct short to ground. However, under such conditions, it is important not to allow the device to exceed the maximum junction temperature rating. T ypically for ±15 V supplies, any one output can be shorted continuously to ground without exceeding the maximum temperature rating.
http://onsemi.com
11
MC34071,2,4,A MC33071,2,4,A
(T ypical Single Supply Applications VCC = 5.0 V)
Figure 37. AC Coupled Noninverting Amplifer Figure 38. AC Coupled Inverting Amplifier
V
CC
V
5.1 M
20 k
in
36.6 mV
C
in
1.0 M
pp
1.0 k
V
O
0
+
MC34071
100 k
AV = 101
BW (–3.0 dB) = 45 kHz
3.7 V
pp
V
CC
0
100 k
C
V
O
O
10 k
R
L
68 k
C
in
Vin 370 mV
10 k
pp
+
MC34071
100 k
C
O
AV = 10 BW (–3.0 dB) = 450 kHz
3.7 V
10 k
R
L
pp
V
O
Figure 39. DC Coupled Inverting Amplifer
Maximum Output Swing
V
O
2.63 V
4.75 V
pp
91 k
5.1 k
V
in
100 k
+
MC34071
BW (–3.0 dB) = 450 kHz
Figure 41. Active High–Q Notch Filter
Vin 0.2 Vdc
V
in
16 k
2.0 C
0.02
0.01
32 k
RR
16 k
C
2.0 R
2.0 C
0.02
MC34071
+
1.0 M
AV = 10
fo = 1.0 kHz
fo =
1
4πRC
V
5.1 k R
L
O
Figure 40. Unity Gain Buffer TTL Driver
2.5 V
V
CC
V
O
0 0 to 10,000 pF
V
+
in
MC34071
Cable
MC54/74XX
TTL Gate
Figure 42. Active Bandpass Filter
2H
R3
2.2 k –
MC34071
+
V
CC
fo = 30 kHz
Qof
Ho = 10 Ho = 1.0
o
0.4 V
CC
o
4Q2R1–R3
GBW
< 0.1
V
O
C
R2
0.047
C
0.047
R1
V
in
1.1 k
5.6 k
Given fo = Center Frequency AO = Gain at Center Frequency Choose Value fo, Q, Ao, C
Then:
Q R3 R1 R3
R3 = R1 = R2 =
πfoC
For less than 10% error from operational amplifier where fo and GBW are expressed in Hz.
GBW = 4.5 MHz Typ.
http://onsemi.com
12
MC34071,2,4,A MC33071,2,4,A
Figure 43. Low Voltage Fast D/A Converter Figure 44. High Speed Low Voltage Comparator
C
F
V
in
Bit
Switches
10 k
10 k 10 k
(R–2R) Ladder Network Settling Time
1.0 µs (8–Bits, 1/2 LSB)
Figure 45. LED Driver Figure 46. Transistor Driver
V
in
V
ref
5.0 k5.0 k
+
MC34071
5.0 k
R
F
MC34071
+
V
CC
“ON” Vin < V
“ON” Vin > V
V
O
V
CC
ref
ref
V
in
+
MC34071
2.0 k R
1.0 V
+
MC34071 MC34071
L
V
CC
(A) PNP (B) NPN
2.0 V
V
O
V
O
4.0 V 13 V/µs
0.1 Delay
1.0 µs
+ –
R
L
t
0.2 µs Delay
25 V/µs
V
R
L
t
CC
Figure 47. AC/DC Ground Current Monitor Figure 48. Photovoltaic Cell Amplifier
I
Load
R
F
MC34071
+
VO = I
Cell RF
VO > 0.1 V
Ground Current
Sense Resistor
+
MC34071
R
S
R1
R2
VO = I
BW ( –3.0 dB) = GBW
Load RS
For VO > 0.1V
V
O
R1
1+
R2
R2
R1+R2
I
Cell
V
= 0 V
Cell
http://onsemi.com
13
V
O
MC34071,2,4,A MC33071,2,4,A
Figure 49. Low Input Voltage Comparator
with Hysteresis
V
R2
V
R1
ref
MC34071
V
in
V
V
VH =(V
R1
=(V
inL
R1+R2
=(VOH–V
inH
R1+R2
R1
R1+R
OL–Vref
R1
OH
+ –
ref
–VOL)
)+V
)+V
V
OH
V
OL
ref
ref
Figure 51. High Input Impedance
Differential Amplifier
R1 R2
1/2
MC34072
+V1 +V2
R2 R4
=
VO = 1 V2–V1
For (V2 V1), V > 0
+
(Critical to CMRR)
R3R1
R4
+
R3
R3
R4 R3
O
R4
1/2
MC34072
+
Hysteresis
V
inLVinH
V
ref
Figure 50. High Compliance V oltage to
Sink Current Converter
I
out
V
in
V
in
I
out
=
+
MC34071
Vin±V
R
IO
R
Figure 52. Bridge Current Amplifier
+V
ref
R
F
RR
V
O
R = ∆R
R < < R RF > > R
R
R
F
MC34071
+
VO = V
(VO 0.1 V)
V
O
R R
F
ref
2
2R
Figure 53. Low V oltage Peak Detector
V
in
+
MC34071
V
R
L
in
V
V
P
t
VO = Vin (pk)
+
10,000 pF
P
f
OSC
Figure 54. High Frequency Pulse
Width Modulation
0.85
^
RC
V
V
P
t
R
1/2
OSC
MC34072
100 k
47 k
V
P
Comparator
C
V+
100 k
+
I
B
0
+
1/2
MC34072
+
Control Group
I
SC
±I
B
Pulse Width
High Current
+
t
Base Charge
Removal
I
out
Output
http://onsemi.com
14
MC34071,2,4,A MC33071,2,4,A
GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = ±15.0 V
Figure 55. Second Order Low–Pass Active Filter Figure 56. Second Order High–Pass Active Filter
R1
560 510
C1
0.44
R2 =
R3
Ǹ
2
C2
0.02
R2
5.6 k
MC34071
+
Choose: fo, Ho, C2 Then: C1 = 2C2 (Ho+1)
R2
R3 = R1 =
Ho+14πfoC2
fo = 1.0 kHz
Ho = 10
R2 H
o
C2
0.05
C1
1.0
Choose: fo, Ho, C1
R2
1.1 k
C1
1.0
R1
46.1 k –
MC34071
+
Then: R1 =
R2 =
C2 =
Figure 57. Fast Settling Inverter Figure 58. Basic Inverting Amplifier
CF*
VO = 10 V
Step
R1
V
V
O
in
V
R2
O
=
V
R1
in
+
MC34071
R2
BW (–3.0 dB) = GBW
I
High Speed
DAC
R
F
2.0 k
MC34071
+
Uncompensated
Compensated
ts = 1.0 µs to 1/2 LSB (8–Bits)
ts = 2.2 µs to 1/2 LSB (12–Bits)
fo = 100 Hz Ho = 20
Ho+0.5
πfoC1
Ǹ
2
2πfoC1 (1/Ho+2)
C
H
o
R1
R1 +R2
SR = 13 V/µs
Ǹ
2
V
O
R
L
*Optional Compensation
SR = 13 V/µs
Figure 59. Basic Noninverting Amplifier Figure 60. Unity Gain Buffer (AV = +1.0)
+
MC34071
V
in
R1
R2
V
O
=
1 +
V
in
BW (–3.0 dB) = GBW
R
R2 R1
R1
R1 +R2
V
O
L
V
in
+
MC34071
BWp = 200 kHz VO = 20 V SR = 10 V/µs
pp
http://onsemi.com
15
V
O
MC34071,2,4,A MC33071,2,4,A
Figure 61. High Impedance Differential Amplifier
+
MC34074
R
R
E
R
MC34074
+
R
R
R
R
MC34074
+
Example: Let: R = RE = 12 k Then: AV = 3.0 BW = 1.5 MHz
V
O
AV = 1 + 2
R
R
E
Figure 62. Dual V oltage Doubler
+V
O
220 pF
R
+V
L
18.93 –18.78
10 k 18 –18
5.0 k 15.4 –15.4
–V
O
100 k
+10
MC34074
+
–10
O
100 k
100 k
+
MC34074
+
MC34074
+
10
+
10
+
10
+
10
R
L
R
L
–V
O
http://onsemi.com
16
Op Amp
Function
Single MC34071P, MC34071AP
MC34071D, MC34071AD MC34071DR2, MC34071ADR2
MC33071P, MC33071AP MC33071D, MC33071AD MC33071DR2, MC33071ADR2
Dual MC34072P , MC34072AP
MC34072D, MC34072AD MC34072DR2, MC34072ADR2
MC33072P, MC33072AP MC33072D, MC33072AD MC33072DR2, MC33072ADR2
MC34072VD MC34072VDR2
Quad MC34074P , MC34074AP
MC34074D, MC34074AD MC34074DR2, MC34074ADR2
MC33074P, MC33074AP MC33074D, MC33074AD MC33074DR2, MC33074ADR2 MC33074DTB, MC33074ADTB MC33074DTBR2, MC33074ADTBR2
MC34074VD MC34074VDR2
Device
MC34071,2,4,A MC33071,2,4,A
ORDERING INFORMATION
Operating
Temperature Range
TA = 0° to +70°C
TA = –40° to +85°C
TA = 0° to +70°C
TA = –40° to +85°C
TA = –40° to +125°C
TA = 0° to +70°C
TA = –40° to +85°C
TA = –40° to +125°C
Package Shipping
SO–8 / Tape & Reel
SO–8 / Tape & Reel
SO–8 / Tape & Reel
SO–8 / Tape & Reel
SO–8 / Tape & Reel
SO–8 / Tape & Reel
SO–8 / Tape & Reel
TSSOP–14
TSSOP–14 / Tape & Reel
SO–8 / Tape & Reel
DIP–8
SO–8
DIP–8
SO–8
DIP–8
SO–8
DIP–8
SO–8
SO–8
DIP–8
SO–8
DIP–8
SO–8
SO–8
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail 98 Units / Rail
2500 Units / Tape & Reel
96 Units / Rail
2500 Units / Tape & Reel
98 Units / Rail
2500 Units / Tape & Reel
http://onsemi.com
17
NOTE 2
–T–
SEATING PLANE
H
A
E
B
C
A1
58
14
F
–A–
N
D
G
0.13 (0.005) B
D
58
1
H
4
e
B
SS
MC34071,2,4,A MC33071,2,4,A
P ACKAGE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
–B–
L
C
J
K
M
0.25MB
A
SEATING PLANE
A0.25MCB
A
T
0.10
M
M
M
D SUFFIX
(SO–8)
PLASTIC PACKAGE
CASE 751–05
ISSUE R
M
h
X 45
_
C
q
L
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC M ––– 10 ––– 10 N 0.76 1.01 0.030 0.040
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.
MILLIMETERS
DIM MIN MAX
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E
3.80 4.00
1.27 BSCe
H 5.80 6.20
h
0.25 0.50
L 0.40 1.25
0 7
q
INCHESMILLIMETERS
__
__
http://onsemi.com
18
MC34071,2,4,A MC33071,2,4,A
P ACKAGE DIMENSIONS
14 8
B
17
A
F
C
N
SEATING
HG D
PLANE
K
P SUFFIX
PLASTIC PACKAGE
CASE 646–06
ISSUE L
L
J
M
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
4. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 19.56 B 0.240 0.260 6.10 6.60 C 0.145 0.185 3.69 4.69 D 0.015 0.021 0.38 0.53 F 0.040 0.070 1.02 1.78 G 0.100 BSC 2.54 BSC H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38 K 0.115 0.135 2.92 3.43 L 0.300 BSC 7.62 BSC M 0 10 0 10
____
N 0.015 0.039 0.39 1.01
MILLIMETERSINCHES
–T–
SEATING PLANE
–A–
14 8
G
D 14 PL
0.25 (0.010) A
D SUFFIX
(SO–14)
PLASTIC PACKAGE
CASE 751A–03
ISSUE F
–B–
71
M
7 PL
P
M
0.25 (0.010) B
X 45
C
R
K
S
B
T
S
M
_
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
F
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7
____
P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019
INCHESMILLIMETERS
http://onsemi.com
19
–T–
0.10 (0.004)
SEATING PLANE
MC34071,2,4,A MC33071,2,4,A
P ACKAGE DIMENSIONS
DTB SUFFIX
(TSSOP–14)
PLASTIC PACKAGE
CASE 948G–01
ISSUE O
14X REFK
S
U
T
S
N
0.25 (0.010)
U0.15 (0.006) T
S
2X L/2
0.10 (0.004) V
14
M
8
M
L
PIN 1 IDENT.
1
S
U0.15 (0.006) T
A
–V–
B
–U–
N
F
7
DETAIL E
K
K1
J
J1
SECTION N–N
C
D
G
H
DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–.
DIM MIN MAX MIN MAX
A 4.90 5.10 0.193 0.200 B 4.30 4.50 0.169 0.177 C ––– 1.20 ––– 0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC H 0.50 0.60 0.020 0.024 J 0.09 0.20 0.004 0.008
–W–
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC M 0 8 0 8
____
INCHESMILLIMETERS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer .
PUBLICATION ORDERING INFORMATION
USA/EUROPE Literature Fulfillment:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com
Fax Response Line*: 303–675–2167
800–344–3810 Toll Free USA/Canada
*To receive a Fax of our publications
N. America Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, T okyo, Japan 141–8549
Phone: 81–3–5487–8345 Email: r14153@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local Sales Representative.
MC34071/D
20
WWW.ALLDATASHEET.COM
Copyright © Each Manufacturing Company.
All Datasheets cannot be modified without permission.
This datasheet has been download from :
www.AllDataSheet.com
100% Free DataSheet Search Site.
Free Download.
No Register.
Fast Search System.
www.AllDataSheet.com
Loading...