ON Semiconductor MBRM130L Technical data
MBRM130L
s
l
l
l
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Surface Mount
Schottky Power Rectifier
POWERMITE
®
Power Surface Mount Package
The Schottky Powermite® employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite® has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles, < 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are AC−DC and DC−DC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm
• Low V
Provides Higher Efficiency and Extends Battery Life
F
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• Pb−Free Packages are Available
Mechanical Characteristics:
• Powermite
®
is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
2
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
BCG
M = Date Code
BCG = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MBRM130LT1 POWERMITE 3000/Tape & Ree
MBRM130LT1G POWERMITE
(Pb−Free)
MBRM130LT3 POWERMITE 12000/Tape & Ree
MBRM130LT3G POWERMITE
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ANODE
M
G
†
3000/Tape & Ree
12000/Tape & Ree
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 4
1 Publication Order Number:
MBRM130L/D
MBRM130L
i
, INSTANTANEOUS FORWARD CURRENT (AMPS)
6
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 135°C) I
Peak Repetitive Forward Current
(At Rated V
, Square Wave, 100 kHz, TC = 135°C)
R
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 30 V)
(VR = 20 V)
(VR = 10 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%
V
V
I
I
R
RRM
RWM
V
R
O
FRM
FSM
stg
J
R
tjl
tjtab
R
tja
V
F
I
R
30 V
1.0 A
2.0 A
50 A
−55 to 150 °C
−55 to 125 °C
35
23
277
TJ = 25°C TJ = 85°C
0.30
0.38
0.52
0.20
0.33
0.50
TJ = 25°C TJ = 85°C
0.41
0.13
0.05
11
5.3
3.2
V/ms
°C/W
V
mA
10
1.0
0.1
0
F
10
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.0
TJ = 125°C
TJ = 85°C
TJ = 150°C
TJ = 25°C
TJ = −40°C
0.1
0.30.1 0.2 0.4
0.5
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.6
0 0.30.1 0.2 0.4
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
http://onsemi.com
2
TJ = 25°C
TJ = −40°C
0.5
0.
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