MBRM130L
s
l
l
l
l
Surface Mount
Schottky Power Rectifier
POWERMITE
®
Power Surface Mount Package
The Schottky Powermite® employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite® has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles, < 1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are AC−DC and DC−DC
converters, reverse battery protection, and “ORing” of multiple supply
voltages and any other application where performance and size are
critical.
Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm
• Low V
Provides Higher Efficiency and Extends Battery Life
F
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• Pb−Free Packages are Available
Mechanical Characteristics:
• Powermite
®
is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
2
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
BCG
M = Date Code
BCG = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MBRM130LT1 POWERMITE 3000/Tape & Ree
MBRM130LT1G POWERMITE
(Pb−Free)
MBRM130LT3 POWERMITE 12000/Tape & Ree
MBRM130LT3G POWERMITE
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ANODE
M
G
†
3000/Tape & Ree
12000/Tape & Ree
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 4
1 Publication Order Number:
MBRM130L/D
MBRM130L
i
, INSTANTANEOUS FORWARD CURRENT (AMPS)
6
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 135°C) I
Peak Repetitive Forward Current
(At Rated V
, Square Wave, 100 kHz, TC = 135°C)
R
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature T
Operating Junction Temperature T
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 30 V)
(VR = 20 V)
(VR = 10 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%
V
V
I
I
R
RRM
RWM
V
R
O
FRM
FSM
stg
J
R
tjl
tjtab
R
tja
V
F
I
R
30 V
1.0 A
2.0 A
50 A
−55 to 150 °C
−55 to 125 °C
35
23
277
TJ = 25°C TJ = 85°C
0.30
0.38
0.52
0.20
0.33
0.50
TJ = 25°C TJ = 85°C
0.41
0.13
0.05
11
5.3
3.2
V/ms
°C/W
V
mA
10
1.0
0.1
0
F
10
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.0
TJ = 125°C
TJ = 85°C
TJ = 150°C
TJ = 25°C
TJ = −40°C
0.1
0.30.1 0.2 0.4
0.5
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.6
0 0.30.1 0.2 0.4
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
http://onsemi.com
2
TJ = 25°C
TJ = −40°C
0.5
0.
MBRM130L
I
, REVERSE CURRENT (AMPS)
g*
10E−3
1.0E−3
100E−6
10E−6
R
1.0E−6
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
, AVERAGE FORWARD CURRENT (AMPS)
O
I
35 65 85 95
100E−3
TJ = 85°C
10E−3
TJ = 85°C
1.0E−3
TJ = 25°C
100E−6
10E−6
, MAXIMUM REVERSE CURRENT (AMPS)
5.0 10 15 300
200
R
3025
I
VR, REVERSE VOLTAGE (VOLTS)
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
TJ = 25°C
20
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
dc
FREQ = 20 kHz
SQUARE WA VE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 7525
125
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
0.7
0.6
0.5
0.4
0.3
0.2
0.1
, AVERAGE POWER DISSIPATION (WATTS)
FO
P
Ipk/Io = 5
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 20
0
0.20
0.4 0.8 1.2 1.6
0.6 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
SQUARE
WAVE
1.055 115105
25
dc
1000
150
140
130
TJ = 25°C
120
15°C/W
110
20°C/W
25°C/W
100
100
90
80
70
60
C, CAPACITANCE (pF)
50
40
, DERATED OPERATING TEMPERATURE (_C)
T
30
20
15 300
J
VR, DC REVERSE VOLTAGE (VOLTS)
10
0
105.0 15 205.0 10
3020 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Deratin
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = T
− r(t)(Pf + Pr) where
Jmax
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = T
Pr = reverse power dissipation
where r(t) = Rthja. For other power applications further calculations must be performed.
R
= 10°C/W
tja
35°C/W
25
Jmax
− r(t)Pr,
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3
R
, TRANSIENT THERMAL RESISTANCE (NORMALIZED) R
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
1.0
0.1
0.01
MBRM130L
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
(T)
1.0
0.1
0.01
0.001
(T)
50%
20%
10%
5.0%
2.0%
1.0%
0.0001 0.001 0.01 1.0 10
T, TIME (s)
0.10.00001
Figure 9. Thermal Response Junction to Lead
Rtjl(t) = Rtjl*r(t)
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
10
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
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4
MBRM130L
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE D
−A−
C
J
F
0.08 (0.003) C
M
S
B
T
S
−B−
TERM. 1
K
TERM. 2
R
L
J
H
−T−
0.08 (0.003) C
D
M
S
B
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
S
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
DIM MIN MAX MIN MAX
A 1.75 2.05 0.069 0.081
B 1.75 2.18 0.069 0.086
C 0.85 1.15 0.033 0.045
D 0.40 0.69 0.016 0.027
F 0.70 1.00 0.028 0.039
H −0.05 +0.10 −0.002 +0.004
J 0.10 0.25 0.004 0.010
K 3.60 3.90 0.142 0.154
L 0.50 0.80 0.020 0.031
R 1.20 1.50 0.047 0.059
S
0.50 REF 0.019 REF
INCHESMILLIMETERS
SOLDERING FOOTPRINT*
0.635
2.67
0.105
0.025
0.762
0.030
2.54
0.100
SCALE 10:1
0.050
ǒ
inches
1.27
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRM130L/D
5
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