Page 1
MBRP3045N
Schottky Barrier Rectifier
Applications
• Switched mode power supply
• Freewheeling diodes
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
1
TO220
1.Anode
3.Anode
2. Cathode
MBRP3045N — Schottky Barrier Rectifier
June 2008
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol ParameterValueUnits
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 45 V
Maximum DC Reverse Voltage 45 V
Average Rectified Forward Current @ TC = 100°C30A
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
200 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 2.2 °C/W
Electrical Characteristics (per diode)
Symbol Parameter Value Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300 μs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
= 15A TC = 25 °C 0.65
F
I
= 15A
F
I
= 30A
F
I
= 30A
F
Maximum Instantaneous Reverse Current
@ rated V
R
T
= 125 °C
C
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
T
= 125 °C
C
0.57
0.80
0.65
1
80
V
mA
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev.A 1
Page 2
Typical Performance Characteristics
MBRP3045N — Schottky Barrier Rectifier
100
[A]
10
F
1
TJ=125 oC
Forward Current, I
0.1
0.01
0.0 0.5 1.0 1.5
TJ=75 oC
TJ=25 oC
Forward Volt age Drop, VF[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
1000
900
800
700
[pF]
J
600
500
400
300
TJ=25 oC
100
10
[mA]
R
1
0.1
Reverse Current, I
0.01
1E-3
0 10203040
TJ=150 oC
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
C/W]
o
1
200
Juntion Capacitance, C
0 10203040
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
35
30
[A]
F(AV)
25
20
15
10
5
Average Forward Current, I
0
0 20 40 60 80 100 120 140 160
DC
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
Transient Thermal Impedance [
100μ 1m 10 m 100m 1 10
Pulse Duration [s]
Figure 4. Thermal Impedance Characteristics
(per diode)
250
[A]
225
FSM
200
175
150
125
100
75
Max. Forward Surge Current, I
50
110100
Number of Cycles @ 60Hz
Figure 6. Non-Repetitive Surge Current
(per diode)
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev. A 2
Page 3
Package Dimensions
MBRP3045N — Schottky Barrier Rectifier
TO-220
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev. A 3
Page 4
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MBRP3045N Schottky Barrier RectifierMBRP3045N
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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This datasheet contains final specifications. Fairchild Semiconductor reserves
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This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev. A 4
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