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MBRS340
SCHOTTKY POWER RECTIFIER
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
General Description:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
Absolute Maximum Ratings* TA = 25
Features:
• Compact surface mount package with J-bend leads (SMC).
• 3.0 Watt Power Dissipation package.
• 3.0 Ampere, forward voltage less than 525 mv
Ordering:
• 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel.
O
C unless otherwise noted
Parameter Value Units
Storage Temperature -65 to +150
Maximum Junction Temperature -65 to +125 OC
Repetitive Peak Reverse Voltage (V
Average Rectified Forward Current (T
(TL = 90OC) 4.0 A
Surge Non Repetitive Forward Current 80 A
) 40 V
RRM
= 100OC) 3.0 A
L
O
C
(Half wave, single phase, 60 Hz)
Junction to Case for Thermal Resistance (R
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SMC Package
(DO-214AB)
) 11 OC/W
ØJL
Top Mark: B34
Electrical Characteristics TA = 25
1
O
C unless otherwise noted
2
Actual Size
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
IR Reverse Leakage Current 2.0 mA VR= 40 V; Tj = 25OC
PW 300 us, <2% Duty Cycle 20 mA VR= 40 V; Tj = 100OC
VF Forward Voltage 525 mV IF= 3.0 A; Tj = 25OC
PW 300 us, <2% Duty Cycle
© 1997 Fairchild Semiconductor Corporation
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MBRS340
Forward Voltage
vs Tem perature
5
2
F
I - FORWARD CURRENT (A)
1
0.5
0.2
0.1
0.05
100ºC
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V - FORWARD VOLTAGE (V)
F
25ºC
120
100
80
60
10
5
1
0.1
0.01
0.001
0.0001
R
I - REVERSE LEAKAGE CURRENT (mA)
Capacitance vs.
Reverse Bias Voltage
T = +25ºC
A
Reverse Leakage Current
vs Tem perat ure
125ºC
100ºC
75ºC
25ºC
0 5 10 15 20 25 30 35 40
V - REVERSE VOLTAGE (V)
R
40
CAPACITANCE ( pF)
20
0
0 5 10 15 20 25 30 35 40
V - REVERSE BIAS VOLTAG E (V)
R
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DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Actual Size
DIM (mils) (mils) (mm) (mm)
A 220 245 5.59 6.22
MIN MAX MIN MAX
2
1
A
B 260 280 6.60 7.11
C 79 103 2.00 2.62
D 305 320 7.75 8.13
E 115 125 2.92 3.18
B
F 4 8 0.10 3.18
G 30 60 0.76 1.52
H 6 12 0.15 0.31
D
G
C
H
F
SMC PACKAGE
PACKAGE CODE = (MC)
Fairchild Semiconductor's Criteria
A
E
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