ON Semiconductor BF393ZL1, BF393 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
300 Vdc
Collector–Base Voltage V
CBO
300 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB =0)
V
(BR)CEO
300 —
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
300 —
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V
(BR)EBO
6.0 —
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
I
CBO
— 0.1
µAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
I
EBO
— 0.1
µAdc
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Order this document
by BF393/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces BF392/D)
BF393
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
h
FE
25
40
—
—
—
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
V
CE(sat)
— 2.0
Vdc
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
V
BE(sat)
— 2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
f
T
50 —
MHz
Common Emitter Feedback Capacitance
(VCB = 60 Vdc, IE = 0, f = 1.0 MHz)
C
re
— 2.0
pF
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