ON Semiconductor BC846BDW1T1-D Service Manual
BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
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These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current −
Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CEO
CBO
EBO
I
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature Range
1. FR−5 = 1.0 x 0.75 x 0.062 in
P
R
TJ, T
q
65 45 30 V
80 50 30 V
6.0 6.0 5.0 V
100 100 100 mAdc
D
JA
stg
380
250
3.0
328 °C/W
−55 to +150 °C
mW
mW/°C
(3)
Q
1
(4) (5) (6)
(1)(2)
Q
2
MARKING
6
1
SOT−363
CASE 419B
STYLE 1
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
DIAGRAM
1x MG
G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 6
1 Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA) BC846 Series
BC847 Series
BC848 Series
Collector−Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0) BC846 Series
BC847 Series
BC848 Series
Collector−Base Breakdown Voltage
(IC = 10 mA) BC846 Series
BC847 Series
BC848 Series
Emitter−Base Breakdown Voltage
(IE = 1.0 mA) BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B,
BC847C, BC848C
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
−
V
V
−
−
−
−
−
−
V
−
−
−
−
−
−
V
−
−
−
−
−
−
−
15
5.0
−
−
−
nA
mA
−
−
−
150
270
−
−
(IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B,
BC847C, BC848C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
V
CE(sat)
V
BE(sat)
V
BE(on)
NF
f
T
obo
200
420
−
−
−
−
580
−
290
520
−
−
0.7
0.9
660
−
450
800
0.25
0.6
−
−
700
770
V
V
mV
100 − − MHz
− − 4.5 pF
dB
− − 10
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