BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
45 V
50 V
5.0 V
500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 10
1 Publication Order Number:
BC817−16LT/D
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Output Capacitance
(IC = 10 mA)
(VEB = 0, IC = 10 mA)
(IE = 1.0 mA)
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
(I
= 100 mA, VCE = 1.0 V) BC817−16
C
= 500 mA, VCE = 1.0 V)
(I
C
(IC = 500 mA, IB = 50 mA)
(IC = 500 mA, VCE = 1.0 V)
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
(VCB = 10 V, f = 1.0 MHz)
= 25°C unless otherwise noted)
A
BC817−25
BC817−40
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
obo
FE
T
45 − − V
50 − − V
5.0 − − V
−
−
100
160
250
40
−
−
−
−
−
−
100
5.0
250
400
600
−
nA
mA
− − 0.7 V
− − 1.2 V
100 − − MHz
− 10 − pF
−
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC817−16LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BC817−16LT3G
6A
SOT−23
10,000/Tape & Reel
(Pb−Free)
BC817−25LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BC817−25LT3G SOT−23
6B
10,000/Tape & Reel
(Pb−Free)
BC817−40LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BC817−40LT3G SOT−23
6C
10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
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