ON Semiconductor BC807-16LT1-D Service Manual
BC807-16LT1G,
BC807-25LT1G,
BC807-40LT1G
General Purpose
Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
−45 V
−50 V
−5.0 V
−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
5xx M G
G
1
5xx = Device Code
xx = A1, B1, or C
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 8
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
Publication Order Number:
BC807−16LT1/D
BC807−16LT1G, BC807−25LT1G, BC807−40LT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC807−16
BC807−25
BC807−40
(IC = −500 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
obo
FE
T
−45 − − V
−50 − − V
−5.0 − − V
−
−
100
160
250
40
−
−100
−
−
−
−
−
−5.0
250
400
600
−
nA
mA
− − −0.7 V
− − −1.2 V
100 − − MHz
− 10 − pF
−
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC807−16LT1G
BC807−16LT3G SOT−23
5A1
BC807−25LT1G
BC807−25LT3G SOT−23
5B1
BC807−40LT1G
BC807−40LT3G
5C
SOT−23
(Pb−Free)
(Pb−Free)
SOT−23
(Pb−Free)
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
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