ON Semiconductor BC638, BC640 Service Manual
BC640, BC640−16
High Current Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
−80 Vdc
−80 Vdc
−5.0 Vdc
−0.5 Adc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 14
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COLLECTOR
2
3
BASE
1
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
2
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 0
1 Publication Order Number:
BC
640
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC64
0−16
AYWWG
G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
BC640/D
BC640, BC640−16
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
= −10 mAdc, IB = 0)
C
Collector − Base Breakdown Voltage
= −100 mAdc, IE = 0)
(I
C
Emitter − Base Breakdown Voltage
= −10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
= −5.0 mAdc, VCE = −2.0 Vdc)
C
(IC = −150 mAdc, VCE = −2.0 Vdc) BC640
(IC = −500 mA, VCE = −2.0 V)
Collector − Emitter Saturation Voltage
(I
= −500 mAdc, IB = −50 mAdc)
C
Base − Emitter On Voltage
(I
= −500 mAdc, VCE = −2.0 Vdc)
C
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
= −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
C
Output Capacitance
(V
= −10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= −0.5 Vdc, IC = 0, f = 1.0 MHz)
EB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
BC640−16
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
C
FE
−80 − −
−80 − −
−5.0 − − Vdc
−
−
25
40
100
25
−
−
−
−
−
−
−
−
−0.25
−0.5
−100
−10
−
160
250
−
−0.5
−
− − −1.0
T
ob
ib
− 150 −
− 9.0 −
− 110 −
Vdc
Vdc
nAdc
mAdc
Vdc
Vdc
MHz
pF
pF
−
ORDERING INFORMATION
Device Package Shipping
BC640G TO−92
(Pb−Free)
BC640ZL1G TO−92
(Pb−Free)
BC640−16 TO−92 5000 Units / Bulk
BC640−16G TO−92
(Pb−Free)
5000 Units / Bulk
2000 Units / Ammo Box
5000 Units / Bulk
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2
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