ON Semiconductor BC618ZL1, BC618RL1, BC618RL, BC618 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
55 Vdc
Collector–Base Voltage V
CBO
80 Vdc
Emitter–Base Voltage V
EBO
12 Vdc
Collector Current — Continuous I
C
1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V
(BR)CEO
55 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
80 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
12 — — Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
I
CES
— — 50 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
I
CBO
— — 50 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
— — 50 nAdc
Order this document
by BC618/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR 1
BASE
2
EMITTER 3
BC618
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
V
CE(sat)
— — 1.1 Vdc
Base–Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
V
BE(sat)
— — 1.6 Vdc
DC Current Gain
(IC = 100 µA, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 5.0 Vdc)
(IC = 200 mA, VCE = 5.0 Vdc)
(IC = 1.0 A, VCE = 5.0 Vdc)
h
FE
2000
4000
10000
4000
—
—
—
—
—
—
50000
—
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
f
T
150 — — MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
C
ob
— 4.5 7.0 pF
Input Capacitance
(VEB = 5.0 V , IE = 0, f = 1.0 MHz)
C
ib
— 5.0 9.0 pF
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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