Total Power Dissipation @ TA = 25°C
Derate above T
Total Power Dissipation @ TA = 25°C
Derate above T
Operating and Storage Junction
Temperature Range
= 25°C
A
= 25°C
A
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
−45Vdc
−50Vdc
−5.0Vdc
−100mAdc
625
5.0
1.5
12
−55 to +150°C
200°C/W
83.3°C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
SymbolMinTy pMaxUnit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
h
FE
T
cbo
fe
−45−−
−50−−
−5.0−−Vdc
−
−
−
−
−15
−5.0
−−−15
100
380
−
−
−
270
500
−0.075
−0.3
−0.25
−
800
−0.25
−0.6
−
−−1.1−
−
−
−0.55
−0.52
−0.55
−0.62
−
−
−0.7
−250−
−2.5−
450600900
Vdc
Vdc
nAdc
mAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
pF
dB
NF
NF
1
2
−
−
0.5
−
10
2.0
−
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2
BC560C
2.0
1.5
1.0
0.8
0.6
0.4
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
400
300
200
100
-0.5 -1.0 -2.0-5.0 -10-20-50 -100 -200
-0.2
, COLLECTOR CURRENT (mAdc)
I
C
Figure 1. Normalized DC Current Gain
80
60
40
30
20
VCE = -10 V
T
= 25°C
A
VCE = -10 V
T
= 25°C
A
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
V, VOLTAGE (VOLTS)
-0.3
-0.2
-0.1
0
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
TA = 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = -10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
-0.2-0.1-0.5 -1.0 -2.0-5.0 -10 -20-50 -100
I
, COLLECTOR CURRENT (mAdc)
C
Figure 2. “Saturation” and “On” Voltages
C
ib
C
ob
TA = 25°C
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
f
-0.7 -1.0-2.0-5.0-10-7.0-20-50
-0.5
, COLLECTOR CURRENT (mAdc)
I
C
Figure 3. Current−Gain — Bandwidth Product
170
160
150
140
130
, BASE SPREADING RESISTANCE (OHMS)
b
r
120
1.0
-0.4 -0.6 -1.0-2.0-4.0-10-20-40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
VCE = -10 V
f = 1.0 kHz
TA = 25°C
I
, COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
-10-0.1-0.2-0.5-1.0-2.0-5.0
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3
BC560C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MINMAXMIN MAX
A 0.175 0.2054.455.20
B 0.170 0.2104.325.33
C 0.125 0.1653.184.19
D 0.016 0.021 0.407 0.533
G 0.045 0.0551.151.39
H 0.095 0.1052.422.66
J0.015 0.0200.390.50
K 0.500--- 12.70---
L 0.250---6.35---
N 0.080 0.1052.042.66
P--- 0.100---2.54
R0.115---2.93---
V 0.135---3.43---
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MINMAX
A4.455.20
B4.325.33
C3.184.19
D0.400.54
G2.402.80
J0.390.50
K 12.70---
N2.042.66
P1.504.00
R2.93---
V3.43---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC560C/D
4
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