ON Semiconductor BC560C-D Service Manual

BC560C
Low Noise Transistors
PNP Silicon
Features
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CollectorBase Voltage V
EmitterBase Voltage V
Collector Current Continuous I
Total Power Dissipation @ TA = 25°C Derate above T
Total Power Dissipation @ TA = 25°C Derate above T
Operating and Storage Junction Temperature Range
= 25°C
A
= 25°C
A
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, JunctiontoCase
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
45 Vdc
50 Vdc
5.0 Vdc
100 mAdc
625
5.0
1.5 12
55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 Rev. 3
1 Publication Order Number:
BC56
0C
AYWW G
G
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC560CG TO92
(PbFree)
BC560CZL1G TO92
(PbFree)
5000 Units / Bulk
2000 / Ammo Pack
BC560C/D
BC560C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
= 10 mAdc, IB = 0)
C
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterBase Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 30 Vdc, IE = 0)
CB
(VCB = 30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(V
= 4.0 Vdc, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc)
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = (Note 1) (IC = 100 mAdc, IB = 5.0 mAdc, (Note 2)
Base Emitter Saturation Voltage
(I
= 100 mAdc, IB = 5.0 mAdc)
C
BaseEmitter On Voltage
= 10 mAdc, VCE = 5.0 Vdc)
(I
C
= 100 mAdc, VCE = 5.0 Vdc)
(I
C
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
C
CollectorBase Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
SmallSignal Current Gain
(I
= 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
C
Noise Figure
= 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(I
C
= 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz)
(I
C
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
h
FE
T
cbo
fe
45
50
5.0 Vdc
15
5.0
15
100 380
270 500
0.075
0.3
0.25
800
0.25
0.6
1.1
0.55
0.52
0.55
0.62
0.7
250
2.5
450 600 900
Vdc
Vdc
nAdc mAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
pF
dB NF NF
1 2
0.5
10
2.0
http://onsemi.com
2
BC560C
2.0
1.5
1.0
0.8
0.6
0.4
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
400 300
200
100
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
-0.2 , COLLECTOR CURRENT (mAdc)
I
C
Figure 1. Normalized DC Current Gain
80 60
40 30
20
VCE = -10 V T
= 25°C
A
VCE = -10 V T
= 25°C
A
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
V, VOLTAGE (VOLTS)
-0.3
-0.2
-0.1
0
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
TA = 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = -10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
-0.2-0.1 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 I
, COLLECTOR CURRENT (mAdc)
C
Figure 2. “Saturation” and “On” Voltages
C
ib
C
ob
TA = 25°C
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
T
f
-0.7 -1.0 -2.0 -5.0 -10-7.0 -20 -50
-0.5 , COLLECTOR CURRENT (mAdc)
I
C
Figure 3. Current−Gain — Bandwidth Product
170
160
150
140
130
, BASE SPREADING RESISTANCE (OHMS)
b
r
120
1.0
-0.4 -0.6 -1.0 -2.0 -4.0 -10 -20 -40 VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
VCE = -10 V f = 1.0 kHz TA = 25°C
I
, COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
-10-0.1 -0.2 -0.5 -1.0 -2.0 -5.0
http://onsemi.com
3
BC560C
PACKAGE DIMENSIONS
TO92 (TO−226)
CASE 2911
ISSUE AM
SEATING PLANE
R
T
SEATING PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80
J 0.39 0.50 K 12.70 --- N 2.04 2.66 P 1.50 4.00 R 2.93 --- V 3.43 ---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−57733850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local Sales Representative
BC560C/D
4
Loading...