ON Semiconductor BC560C-D Service Manual
BC560C
Low Noise Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above T
Total Power Dissipation @ TA = 25°C
Derate above T
Operating and Storage Junction
Temperature Range
= 25°C
A
= 25°C
A
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
−45 Vdc
−50 Vdc
−5.0 Vdc
−100 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 3
1 Publication Order Number:
BC56
0C
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC560CG TO−92
(Pb−Free)
BC560CZL1G TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Ammo Pack
BC560C/D
BC560C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= −10 mAdc, IB = 0)
C
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
= −10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= −30 Vdc, IE = 0)
CB
(VCB = −30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(V
= −4.0 Vdc, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = (Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc, (Note 2)
Base −Emitter Saturation Voltage
(I
= −100 mAdc, IB = −5.0 mAdc)
C
Base−Emitter On Voltage
= −10 mAdc, VCE = −5.0 Vdc)
(I
C
= −100 mAdc, VCE = −5.0 Vdc)
(I
C
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
C
Collector−Base Capacitance
(V
= −10 Vdc, IE = 0, f = 1.0 MHz)
CB
Small−Signal Current Gain
(I
= −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)
C
Noise Figure
= −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(I
C
= −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz)
(I
C
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
h
FE
T
cbo
fe
−45 − −
−50 − −
−5.0 − − Vdc
−
−
−
−
−15
−5.0
− − −15
100
380
−
−
−
270
500
−0.075
−0.3
−0.25
−
800
−0.25
−0.6
−
− −1.1 −
−
−
−0.55
−0.52
−0.55
−0.62
−
−
−0.7
− 250 −
− 2.5 −
450 600 900
Vdc
Vdc
nAdc
mAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
pF
dB
NF
NF
1
2
−
−
0.5
−
10
2.0
−
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