ON Semiconductor BC337, BC337−16, BC337−25, BC337−40, BC338−25 Technical data

查询BC337-16RL1供应商

BC337, BC337−16,
BC337−25, BC337−40,
BC338−25

Amplifier Transistors

NPN Silicon

http://onsemi.com

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol BC337 BC338 Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Device Dissipation

@ TA = 25°C
Derate above 25°C

Total Device Dissipation

@ TC = 25°C
Derate above 25°C

Operating and Storage Junction

Temperature Range

CEO
CBO
EBO

P

P

TJ, T

C

D

D

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

Thermal Resistance,

Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

R



JA

R



JC

45 25 Vdc
50 30 Vdc

5.0 Vdc

800 mAdc

625

5.0

1.5

−55 to +150 °C

stg

200 °C/W

83.3 °C/W

mW

mW/°C

W

mW/°C

12

COLLECTOR

1

2

BASE

3

EMITTER

MARKING
DIAGRAM

BC33
xxxx
YWW

TO−92 (TO−226)

CASE 29

xxxx = Specific Device Code
Y = Year
WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 4

1 Publication Order Number:

BC337/D

BC337, BC337−16, BC337−25, BC337−40, BC338−25

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) BC337

BC338

Collector−Emitter Breakdown Voltage
(IC = 100 A, IE = 0) BC337

BC338

Emitter−Base Breakdown Voltage
(I

= 10 A, IC = 0)

E

Collector Cutoff Current
(VCB = 30 V, IE = 0) BC337
(V

= 20 V, IE = 0) BC338

CB

Collector Cutoff Current
(VCE = 45 V, VBE = 0) BC337
(V

= 25 V, VBE = 0) BC338

CE

Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS

DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC337

BC337−16

BC337−25/BC338−25

BC337−40

(I

= 300 mA, VCE = 1.0 V)

C

Base−Emitter On Voltage
(I

= 300 mA, VCE = 1.0 V)

C

Collector−Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)

Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

Symbol Min Typ Max Unit

V

(BR)CE

V

(BR)CE

V

(BR)EB

I

CBO

I

CES

I

EBO

h

V

BE(on)

V

CE(sat)

C

O

S

O

FE

f

45
25

50
30

−

−

−

−

−

−

−

−

5.0 − − Vdc

−

−

−

−

−

−

−

−

100
100

100
100

− − 100 nAdc

100
100
160
250

60

−

−

−

−

−

630
250
400
630

−

− − 1.2 Vdc

− − 0.7 Vdc

ob

T

− 15 − pF

− 210 − MHz

Vdc

Vdc

nAdc

nAdc

−

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

THERMAL RESISTANCE

0.03

0.02

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

D = 0.5

0.2

0.05

0.02

0.1

0.01

SINGLE PULSE

SINGLE PULSE

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2



(t) = (t) 

JC



JC



JA



JA

JC

= 100°C/W MAX
(t) = r(t) 

JA

= 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

− TC = P

J(pk)

(pk) JC

0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)

Figure 1. Thermal Response

http://onsemi.com

2

1

(t)