ON Semiconductor BC327, BC327−16, BC327−25, BC327−40 Technical data
查询BC327-016G供应商
BC327, BC327−16,
BC327−25, BC327−40
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage V
Collector −Base Voltage V
Collector −Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Junction
Temperature Range
CEO
CES
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R
q
JA
R
q
JC
−45 Vdc
−50 Vdc
−5.0 Vdc
−800 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
BULK PACK TAPE & REEL
1
2
3
BENT LEADSTRAIGHT LEAD
AMMO PACK
MARKING DIAGRAM
BC
xx
AYWW G
G
TO−92
CASE 29
STYLE 17
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 4
1 Publication Order Number:
BCxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
BC327/D
BC327, BC327−16, BC327−25, BC327−40
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
= −10 mA, IB = 0)
(I
C
Collector −Emitter Breakdown Voltage
(IC = −100 mA, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −10 mA, IC = 0)
Collector Cutoff Current
(VCB = −30 V, IE = 0)
Collector Cutoff Current
(VCE = −45 V, VBE = 0)
Emitter Cutoff Current
(VEB = −4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC327
BC327−16
BC327−25
BC327−40
(IC = −300 mA, VCE = −1.0 V)
Base−Emitter On Voltage
(IC = −300 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = −10 V, IE = 0, f = 1.0 MHz)
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
Symbol Min Ty p Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
V
BE(on)
V
CE(sat)
C
f
FE
−45 − −
−50 − −
−5.0 − − Vdc
− − −100
− − −100
− − −100 nAdc
100
100
160
250
40
−
−
−
−
−
630
250
400
630
−
− − −1.2 Vdc
− − −0.7 Vdc
ob
T
− 11 − pF
− 260 − MHz
Vdc
Vdc
nAdc
nAdc
−
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
THERMAL RESISTANCE
0.03
0.02
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.05
0.02
D = 0.5
0.2
0.1
0.01
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
qJC(t) = (t) q
qJC = 100°C/W MAX
qJA(t) = r(t) q
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
2
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
JC
− TC = P
JA
1
(pk) qJC
t, TIME (SECONDS)
Figure 1. Thermal Response
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2
(t)
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