ON Semiconductor BC307-D Service Manual
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
BC307/D
BC307B
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
−45 Vdc
Collector − Base Voltage V
CBO
−50 Vdc
Emitter − Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
125 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
http://onsemi.com
BC307BRL1G TO−92
(Pb−Free)
2000 / Tape & Ree
l
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD801 1/D.
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC30
7BRL1
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC307B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0)
V
(BR)CEO
−45 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −100 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − − Vdc
Collector−Emitter Leakage Current
(V
CES
= −50 V, V
BE
= 0)
(V
CES
= −50 V, V
BE
= 0) T
A
= 125°C
I
CES
−
−
−0.2
−0.2
−15
−4.0
nAdc
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc)
h
FE
−
200
−
150
290
180
−
460
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −10 mAdc, I
B
= see Note 1)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−
−0.10
−0.30
−0.25
−0.3
−0.6
−
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−
−
−0.7
−1.0
−
−
Vdc
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
V
BE(on)
−0.55 −0.62 −0.7 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
− 280 − MHz
Common Base Capacitance
(V
CB
= −10 Vdc, I
C
= 0, f = 1.0 MHz)
C
cbo
− − 6.0 pF
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz)
NF − 2.0 10 dB
1. I
C
= −10 mAdc on the constant base current characteristic, which yields the point I
C
= −1 1 mAdc, V
CE
= −1.0 V.
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