ON Semiconductor BC307-D Service Manual
BC307B
l
†
s
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
−45 Vdc
−50 Vdc
−5.0 Vdc
−100 mAdc
350
2.8
1.0
8.0
−55 to +150 °C
357 °C/W
125 °C/W
mW
mW/°C
W
mW/°C
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC30
7BRL1
AYWWG
G
TO−92
CASE 29
STYLE 17
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BC307BRL1G TO−92
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1 Publication Order Number:
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.
(Pb−Free)
2000 / Tape & Ree
†
BC307/D
BC307B
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
= −2.0 mAdc, IB = 0)
(I
C
Emitter−Base Breakdown Voltage
= −100 mAdc, IC = 0)
(I
E
Collector−Emitter Leakage Current
(V
= −50 V, VBE = 0)
CES
(V
= −50 V, VBE = 0) TA = 125°C
CES
V
(BR)CEO
V
(BR)EBO
I
CES
−45 − − Vdc
−5.0 − − Vdc
−
−
−0.2
−0.2
ON CHARACTERISTICS
DC Current Gain
(I
= −10 mAdc, VCE = −5.0 Vdc)
C
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(IC = −10 mAdc, IB = see Note 1)
= −100 mAdc, IB = −5.0 mAdc)
(I
C
Base−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(I
= −2.0 mAdc, VCE = −5.0 Vdc)
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
−
200
−
−
−
−
−
−
150
290
180
−0.10
−0.30
−0.25
−0.7
−1.0
−0.55 −0.62 −0.7 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
= −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
(I
C
Common Base Capacitance
(V
= −10 Vdc, IC = 0, f = 1.0 MHz)
CB
Noise Figure
= −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(I
C
f
T
C
cbo
NF − 2.0 10 dB
− 280 − MHz
− − 6.0 pF
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −1 1 mAdc, VCE = −1.0 V.
−15
−4.0
−
460
−
−0.3
−0.6
−
−
−
nAdc
mA
−
Vdc
Vdc
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2
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