ON Semiconductor BAV99LT3, BAV99LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward Current
(averaged over any 20 ms period)
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 A
(1)
R
F
FM(surge)
RRM
I
F(AV)
FRM
I
FSM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR–5 Board,
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T
(1)
TA = 25°C
(2)
TA = 25°C
DEVICE MARKING
BAV99LT1 = A7
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
70 Vdc
215 mAdc
500 mAdc
70 V
715 mA
450 mA
2.0
1.0
0.5
Order this document
by BAV99LT1/D
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
ANODE
1
3
CATHODE/ANODE
A
P
D
R
q
JA
P
D
R
q
JA
stg
225
1.8
556 °C/W
300
2.4
417 °C/W
–65 to +150 °C
CATHODE
2
mW
mW/°C
mW
mW/°C
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BAV99LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (VR = 70 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, i
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) V
= 100 µA) V
(BR)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
= 1.0 mAdc) (Figure 1) RL = 100
R(REC)
W
(BR)
I
R
C
D
V
F
t
rr
FR
70 — Vdc
—
—
—
— 1.5 pF
—
—
—
—
— 6.0 ns
— 1.75 V
2.5
30
50
715
855
1000
1250
m
Adc
mVdc
+10 V
50
GENERATOR
820
Ω
Ω
OUTPUT
PULSE
0.1 µF
2 k
I
100
F
µ
H
DUT
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
0.1
OSCILLOSCOPE
rr
µ
F
50 Ω INPUT
SAMPLING
V
R
is equal to 10 mA.
R(peak)
t
t
r
p
10%
90%
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
I
t
F
t
rr
i
I
R
(IF = IR = 10 mA; measured
R(REC)
OUTPUT PULSE
at i
R(REC)
t
= 1 mA
= 1 mA)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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