ON Semiconductor BAV74LT3, BAV74LT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage V
R
50 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 5.0 µAdc)
V
(BR)
50 — Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
I
R
—
—
100
0.1
µAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
C
D
— 2.0 pF
Forward Voltage
(IF = 100 mAdc)
V
F
— 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, I
R(REC)
= 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω)
t
rr
— 4.0 ns
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BAV74LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
Motorola, Inc. 1997
3
CATHODE
ANODE
1
2
ANODE
BAV74LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
TA = –40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
I
R
, REVERSE CURRENT (
µ
A)
Curves Applicable to Each Anode
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