ON Semiconductor BAS16TT1 Datasheet
BAS16TT1
Preferred Device
Advance Information
Silicon Switching Diode
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MAXIMUM RATINGS (T
Rating Symbol Max Unit
Continuous Reverse Voltage V
Recurrent Peak Forward Current I
Peak Forward Surge Current
Pulse Width = 10 ms
= 25°C)
A
R
F
I
FM(surge)
75 V
200 mA
500 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Power Dissipation,
TA = 25°C
Operating and Storage Junction
T emperature Range
Thermal Resistance,
Junction to Ambient
(1) Device mounted on FR–4 glass epoxy printed circuit board using the
minimum recommended footpad.
(1)
P
TJ, T
R
D
stg
θ
JA
150 mW
–55 to
+150
833 °C/W
°C
3
CATHODE
3
1
CASE 463
SOT–416/SC–75
STYLE 2
DEVICE MARKING
A6
1
ANODE
2
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev . 0
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
BAS16TT1 SOT–416
Preferred devices are recommended choices for future use
and best overall value.
3000 / Tape & Reel
BAS16TT1/D
BAS16TT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Forward Voltage
(I
= 1.0 mA)
F
(I
= 10 mA)
F
(I
= 50 mA)
F
(I
= 150 mA)
F
Reverse Current
= 75 V)
(V
R
(V
= 75 V, TJ = 150°C)
R
(V
= 25 V, TJ = 150°C)
R
Capacitance
(V
= 0, f = 1.0 MHz)
R
Reverse Recovery Time
(I
= IR = 10 mA, RL = 50 Ω) (Figure 1)
F
Stored Charge
(I
= 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
F
Forward Recovery Voltage
(I
= 10 mA, tr = 20 ns) (Figure 3)
F
= 25°C unless otherwise noted)
A
V
F
I
R
C
D
t
rr
—
—
—
—
—
—
—
715
866
1000
1250
1.0
50
30
— 2.0 pF
— 6.0 ns
mV
QS — 45 PC
V
FR
— 1.75 V
µA
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2
BAS16TT1
1
ns MAX
500 Ω
10%
t
t
t
if
rr
DUTY CYCLE = 2%
90%
V
F
I
rr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
DUT BAW62
500 Ω
D1 243 pF 100 KΩ
10%
20 ns MAX
V
C
V
CM
t
Qa
VCM+
C
DUT
50 Ω
OSCILLOSCOPE
R ≥ 10 MΩ
C ≤ 7 pF
DUTY CYCLE = 2%
90%
V
f
t
400 ns
Figure 2. Recovery Charge Equivalent T est Circuit
120 ns
V
90%
10%
t
2 ns MAX
V
1 KΩ 450 Ω
V
fr
50 ΩDUT
DUTY CYCLE = 2%
Figure 3. Forward Recovery V oltage Equivalent Test Circuit
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3
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