ON Semiconductor 2N5190, 2N5191, 2N5192 Service Manual
2N5190, 2N5191, 2N5192
s
Brochure, BRD801 1/D.
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage 2N5190
2N5191
2N5192
Collector−Base Voltage 2N5190
2N5191
2N5192
Emitter−Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
V
CEO
V
CBO
EBO
P
TJ, T
R
C
B
D
–65 to +150 °C
stg
q
JC
40
60
80
40
60
80
5.0 Vdc
4.0 Adc
1.0 Adc
40
320
3.12 °C/W
Vdc
Vdc
W
mW/°C
http://onsemi.com
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
TO−225AA
CASE 77
STYLE 1
3
2
1
MARKING DIAGRAM
YWW
2
N519xG
Y = Year
WW = Work Week
2N519x = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
2N5190 TO−225AA 500 Units/Box
2N5190G TO−225AA
2N5191 TO−225AA 500 Units/Box
2N5191G TO−225AA
2N5192 TO−225AA
2N5192G TO−225AA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
x = 0, 1, or 2
†
500 Units/Box
(Pb−Free)
500 Units/Box
(Pb−Free)
500 Units/Box
500 Units/Box
(Pb−Free)
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 12
1 Publication Order Number:
2N5191/D
2N5190, 2N5191, 2N5192
ELECTRICAL CHARACTERISTICS* (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0) 2N5190
Collector Cutoff Current
(V
= 40 Vdc, IB = 0) 2N5190
CE
(VCE = 60 Vdc, IB = 0) 2N5191
(VCE = 80 Vdc, IB = 0) 2N5192
Collector Cutoff Current
(VCE = 40 Vdc, V
(V
= 60 Vdc, V
CE
= 80 Vdc, V
(V
CE
= 40 Vdc, V
(V
CE
= 60 Vdc, V
(V
CE
= 80 Vdc, V
(V
CE
= 1.5 Vdc) 2N5190
EB(off)
= 1.5 Vdc) 2N5191
EB(off)
= 1.5 Vdc) 2N5192
EB(off)
= 1.5 Vdc, TC = 125_C) 2N5190
EB(off)
= 1.5 Vdc, TC = 125_C) 2N5191
EB(off)
= 1.5 Vdc, TC = 125_C) 2N5192
EB(off)
Collector Cutoff Current
(V
= 40 Vdc, IE = 0) 2N5190
CB
(VCB = 60 Vdc, IE = 0) 2N5191
(VCB = 80 Vdc, IE = 0) 2N5192
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
= 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191
C
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190/2N5191
Collector−Emitter Saturation Voltage
(I
= 1.5 Adc, IB = 0.15 Adc)
C
= 4.0 Adc, IB = 1.0 Adc)
(I
C
Base−Emitter On Voltage
(I
= 1.5 Adc, VCE = 2.0 Vdc)
C
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2N5191
2N5192
2N5192
2N5192
Symbol Min Max Unit
V
CEO(sus)
I
CEO
I
CEX
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
40
60
80
−
−
−
−
−
−
−
−
−
−
−
−
1.0
1.0
1.0
0.1
0.1
0.1
2.0
2.0
2.0
0.1
0.1
0.1
−
Vdc
−
−
mAdc
mAdc
mAdc
− 1.0 mAdc
25
20
10
7.0
−
−
100
80
−
−
0.6
1.4
Vdc
− 1.2 Vdc
2.0 − MHz
−
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