ON Semiconductor 2N5190, 2N5191, 2N5192 Service Manual

2N5190, 2N5191, 2N5192

s

Brochure, BRD801 1/D.

Silicon NPN Power
Transistors

Silicon NPN power transistors are for use in power amplifier and
switching circuits, — excellent safe area limits. Complement to PNP
2N5194, 2N5195.

Features

• ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125 in.

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage 2N5190

2N5191
2N5192

Collector−Base Voltage 2N5190

2N5191

2N5192
Emitter−Base Voltage V
Collector Current I
Base Current I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

V

CEO

V

CBO

EBO

P

TJ, T

R

C
B

D

–65 to +150 °C

stg

q

JC

40
60
80

40
60
80

5.0 Vdc

4.0 Adc

1.0 Adc
40

320

3.12 °C/W

Vdc

Vdc

W

mW/°C

http://onsemi.com

4.0 AMPERES
NPN SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS − 40 WATTS

TO−225AA

CASE 77
STYLE 1

3

2

1

MARKING DIAGRAM

YWW
2
N519xG

Y = Year
WW = Work Week
2N519x = Device Code

G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

2N5190 TO−225AA 500 Units/Box
2N5190G TO−225AA

2N5191 TO−225AA 500 Units/Box
2N5191G TO−225AA

2N5192 TO−225AA
2N5192G TO−225AA

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification

x = 0, 1, or 2

†

500 Units/Box

(Pb−Free)

500 Units/Box

(Pb−Free)

500 Units/Box
500 Units/Box

(Pb−Free)

© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 12

1 Publication Order Number:

2N5191/D

2N5190, 2N5191, 2N5192

ELECTRICAL CHARACTERISTICS* (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0) 2N5190

Collector Cutoff Current

(V

= 40 Vdc, IB = 0) 2N5190

CE

(VCE = 60 Vdc, IB = 0) 2N5191
(VCE = 80 Vdc, IB = 0) 2N5192

Collector Cutoff Current

(VCE = 40 Vdc, V
(V

= 60 Vdc, V

CE

= 80 Vdc, V

(V

CE

= 40 Vdc, V

(V

CE

= 60 Vdc, V

(V

CE

= 80 Vdc, V

(V

CE

= 1.5 Vdc) 2N5190

EB(off)

= 1.5 Vdc) 2N5191

EB(off)

= 1.5 Vdc) 2N5192

EB(off)

= 1.5 Vdc, TC = 125_C) 2N5190

EB(off)

= 1.5 Vdc, TC = 125_C) 2N5191

EB(off)

= 1.5 Vdc, TC = 125_C) 2N5192

EB(off)

Collector Cutoff Current

(V

= 40 Vdc, IE = 0) 2N5190

CB

(VCB = 60 Vdc, IE = 0) 2N5191
(VCB = 80 Vdc, IE = 0) 2N5192

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

C

(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

Collector−Emitter Saturation Voltage

(I

= 1.5 Adc, IB = 0.15 Adc)

C

= 4.0 Adc, IB = 1.0 Adc)

(I

C

Base−Emitter On Voltage

(I

= 1.5 Adc, VCE = 2.0 Vdc)

C

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

*JEDEC Registered Data.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2N5191
2N5192

2N5192
2N5192

Symbol Min Max Unit

V

CEO(sus)

I

CEO

I

CEX

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

T

40
60
80

−

−

−

−

−

−

−

−

−

−

−

−

1.0

1.0

1.0

0.1

0.1

0.1

2.0

2.0

2.0

0.1

0.1

0.1

−

Vdc

−

−

mAdc

mAdc

mAdc

− 1.0 mAdc

25
20
10

7.0

−

−

100

80

−

−

0.6

1.4

Vdc

− 1.2 Vdc

2.0 − MHz

−

http://onsemi.com

2

2N5190, 2N5191, 2N5192

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0.1

0.004

2.0

1.6

1.2

TJ = 150°C

0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0

IC = 10 mA

25°C

TJ = 25°C

−55 °C

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

100 mA 1.0 A 3.0 A

VCE = 2.0 V
V

= 10 V

CE

2.0 3.0

0.8

0.4

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

0

0.05

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500

2.0

TJ = 25°C

1.6

1.2

0.8

0.4

0.005

0

V

@ IC/IB = 10

BE(sat)

V

@ IC/IB = 10

CE(sat)

0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0

I

C

0.1 0.5 3.0

, COLLECTOR CURRENT (AMP)

VBE @ VCE = 2.0 V

Figure 3. “On” Voltages

5.0 7.0 20 30 50 70 100 200 300

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

+2.5

+2.0

+1.5

+1.0

+0.5

0

−0.5

−1.0

−1.5

−2.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

−2.5

0.005 0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0

*APPLIES FOR IC/IB ≤

*qV for V

Figure 4. Temperature Coefficients

h

@V

FE

CE

TJ = −65°C to +150°C

CE(sat)

qV for V

BE

IC, COLLECTOR CURRENT (AMP)

2

+2.0V

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3

2N5190, 2N5191, 2N5192

M

0

3

10

2

10

1

10

0

10

−1

10

− 2

10

− 3

10

−0.4

APPROX

+11 V

V

V

EB(off)

APPROX

+11 V

VCE = 30 V

TJ = 150°C

100°C

REVERSE

FORWARD

25°C

I

CES

−0.3 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cut−Off Region

V

t

1

100 < t

t

≤ 7.0 ns

< 500 ms

2

< 15 ns

3

CC

V

in

Cjd<<C

R

C

R

B

eb

−4.0 V

RB and RC varied
to obtain desired
current levels

TURN−ON PULSE

0

in

V

in

t

1

t

3

SCOPE

7

10

IC = 10 x I

CES

CES

CES

VALUES

6

10

IC ≈ I

5

10

CES

IC = 2 x I

4

10

3

10

(TYPICAL I

OBTAINED FROM FIGURE 5)

, EXTERNAL BASE−EMITTER RESISTANCE (OH

2

10

BE

R

40 60 80 100 120 140 16

20

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Effects of Base−Emitter Resistance

300

200

100

70

CAPACITANCE (pF)

50

VCE = 30 V

TJ = +25°C

C

eb

C

cb

t

2

TURN−OFF PULSE

DUTY CYCLE ≈ 2.0%
APPROX −9.0 V

Figure 7. Switching Time Equivalent Test Circuit

2.0

1.0

0.7

0.5

0.3

0.2

tr @ VCC = 30 V

tr @ VCC = 10 V

IC/IB = 10
T

= 25°C

J

0.1

0.07

0.05

td @ V

EB(off)

= 2.0 V

0.03

0.02

0.05

0.07 0.1 0.2 0.3 1.0 2.0 4.0

0.7 3.0

0.5

IC, COLLECTOR CURRENT (AMP)

Figure 9. T urn−On Time

30

0.2 0.3 0.5 1.0 3.0 5.0 20

0.1

, REVERSE VOLTAGE (VOLTS)

V

R

2.0 10 30

Figure 8. Capacitance

2.0

1.0

0.7

tf @ VCC = 30 V

0.5

0.3

0.2

t, TIME (s)μ

0.1

0.07

0.05

0.03

0.02

0.05

0.07 0.1 0.2 0.3 1.0 2.0 4.0

ts′

tf @ VCC = 10 V

0.7 3.0

0.5

IC, COLLECTOR CURRENT (AMP)

Figure 10. T urn−Off Time

IB1 = I

B2

IC/IB = 10

′ = ts − 1/8 t

t

s

TJ = 25°C

40

f

http://onsemi.com

4

2N5190, 2N5191, 2N5192

0

10

5.0

TJ = 150°C

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

1.0

SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT T
BONDING WIRE LIMIT

CURVES APPLY BELOW RATED V

2.0 5.0 10 20 50 10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 11. Rating and Thermal Data

Active−Region Safe Operating Area

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.1

0.07

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02
THERMAL RESISTANCE (NORMALIZED)

0.01

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

0.02 0.03

There are two limitations on the power handling ability of

5.0ms

100ms

1.0ms

a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable

dc

operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 11 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse

= 25°C

C

CEO

2N5191

2N5192

0.01

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 1000500
t, TIME OR PULSE WIDTH (ms)

limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.

q

= 3.12°C/W  2N5190−92

JC(max)

− V

C

CE

J(pk)

Figure 12. Thermal Response

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

t

P

A train of periodical power pulses can be represented by

the model shown in Figure A. Using the model and the

P

P

P

P

device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.

To find q

(t), multiply the value obtained from Figure 12

JC

by the steady state value q

t

1

1/f

t

1

f −

1

t

P

P

Figure A

DUTY CYCLE, D = t

PEAK PULSE POWER = P

Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t

= 0.1 ms, tp = 0.5 ms. (D = 0.2).

1

Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t

, D) is 0.27.

1

The peak rise in function temperature is therefore:

DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C

JC

.

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5

2N5190, 2N5191, 2N5192

PACKAGE DIMENSIONS

TO−225AA

CASE 77−09

ISSUE Z

−B−

−A−

K

F

M

U

Q

132

H

V

G

0.25 (0.010) B

S

D

2 PL

M

0.25 (0.010) B

A

C

J

R

M

M

A

M

M

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63

M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N5191/D

6