ON Semiconductor 2N5088, 2N5089 Service Manual
2N5088, 2N5089
s
Brochure, BRD8011/D.
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
3 COLLECTOR
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage
2N5088
2N5089
Collector − Base Voltage
2N5088
2N5089
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
30
25
35
30
3.0 Vdc
50 mAdc
625
5.0
1.5
12
Vdc
Vdc
mW
mW/°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
is measured with the device soldered into a typical printed circuit board.
q
JA
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
2
BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
1
2
3
STRAIGHT LEAD
BULK PACK
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
508x
AYWW G
G
x = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
ORDERING INFORMATION
Device Package Shipping
2N5088G TO−92
2N2088RLRAG TO−92
2N5089G
2N2089RLRE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
1 Publication Order Number:
(Pb−Free)
(Pb−Free)
TO−92
(Pb−Free)
TO−92 2000/Tape & Reel
5000 Units/Bulk
2000/Tape & Reel
5000 Units/Bulk
†
2N5088/D
2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage (Note 2)
(I
= 1.0 mAdc, IB = 0) 2N5088
C
Collector− Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) 2N5088
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) 2N5088
(VCB = 15 Vdc, IE = 0) 2N5089
Emitter Cutoff Current
(V
= 3.0 Vdc, IC = 0)
EB(off)
(V
= 4.5 Vdc, IC = 0)
EB(off)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N5088
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2) 2N5088
Collector− Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base− Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N5088
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5088
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5089
2N5089
2N5089
2N5089
2N5089
2N5089
2N5089
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
C
C
h
NF
30
25
−
−
Vdc
Vdc
35
30
−
−
nAdc
−
−
50
50
nAdc
−
−
50
100
−
300
400
350
450
300
400
900
1200
−
−
−
−
− 0.5 Vdc
− 0.8 Vdc
T
cb
eb
fe
50 − MHz
− 4.0 pF
− 10 pF
350
450
1400
1800
−
dB
−
−
3.0
2.0
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
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