ON Semiconductor 2N5087-D Service Manual

2N5087

s

Preferred Device

Amplifier Transistor

PNP Silicon

Features

• Pb−Free Packages are Available*

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3 COLLECTOR

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

TJ, T

CEO
CBO
EBO

C

P

D

P

D

stg

50 Vdc
50 Vdc

3.0 Vdc
50 mAdc

625

5.0

1.5
12

−55 to +150 °C

mW

mW/°C

W

mW/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

q

JA

q

JC

200 °C/W

83.3 °C/W

TO−92
CASE 29
STYLE 1

2

BASE

1 EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

2N

5087

AYWWG

G

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 4

1 Publication Order Number:

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

2N5087 TO−92 5000 Units / Bulk
2N5087G TO−92

(Pb−Free)

2N5087RLRAG TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

5000 Units / Bulk

2000/Tape & Reel

†

2N5087/D

2N5087

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

Collector−Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)

Collector−Emitter Saturation Voltage

Base−Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

(IC = 1.0 mAdc, IB = 0)

(IC = 100 mAdc, IE = 0)

(VCB = 35 Vdc, IE = 0)

(VEB = 3.0 Vdc, IC = 0)

(IC = 10 mAdc, IB = 1.0 mAdc)

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

V

CE(sat)

V

BE(on)

C

h

NF

50 −

Vdc

Vdc

50 −

nAdc

− 50
nAdc

− 50

FE

250
250
250

800

−

−

−

Vdc

− 0.3

Vdc

− 0.85

f

T

cb

fe

40 −

− 4.0

250 900

MHz

pF

−

dB

−

−

2.0

2.0

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2

2N5087

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

10

7.0

5.0

3.0

1.0 mA

, NOISE VOLTAGE (nV)

2.0

n

e

1.0
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

IC = 10 mA

30 mA

100 mA

300 mA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

R

≈ 0

S

Figure 1. Noise Voltage

1.0M
500k

200k
100k

50k

20k
10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

S

500

R

200
100

0.5 dB

1.0 dB

10

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

IC, COLLECTOR CURRENT (mA)

BANDWIDTH = 1.0 Hz

2.0 dB

3.0 dB

5.0 dB

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

, NOISE CURRENT (pA)

n

I

0.3

0.2

0.1
10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

IC = 1.0 mA

300 mA

100 mA

30 mA

10 mA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

RS ≈∞

Figure 2. Noise Current

1.0M
500k

200k
100k

50k

20k
10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

S

500

R

200

100

0.5 dB

IC, COLLECTOR CURRENT (mA)

BANDWIDTH = 1.0 Hz

1.0 dB

2.0 dB

3.0 dB

5.0 dB

1.0M
500k

200k
100k

50k

20k
10k

5.0k

2.0k

1.0k

, SOURCE RESISTANCE (OHMS)

S

500

R

200

100

Figure 3. Narrow Band, 100 Hz

10 Hz to 15.7 kHz

0.5 dB

20 30 50 70 100 200 300 500 700 1.0k

10

IC, COLLECTOR CURRENT (mA)

Figure 5. Wideband

1.0 dB

2.0 dB

3.0 dB

5.0 dB

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Figure 4. Narrow Band, 1.0 kHz

Noise Figure is Defined as:

2

2

2

e

) 4KTRS) I

n

NF + 20 log

= Noise Voltage of the T ransistor referred to the input. (Figure 3)

e

n

= Noise Current of the Transistor referred to the input. (Figure 4)

I

n

= Boltzman’s Constant (1.38 x 10

K

= Temperature of the Source Resistance (°K)

T

= Source Resistance (Ohms)

R

S

3

10

ƪ

4KTR

S

1ń2

R

n

S

ƫ

−23

j/°K)