2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Trigger Current − 200 A Maximum
• Low Reverse and Forward Blocking Current − 50 A Maximum,
TC = 110°C
• Low Holding Current − 5 mA Maximum
• Passivated Surface for Reliability and Uniformity
• Device Marking: Device Type, e.g., 2N5060, Date Code
• Pb−Free Packages are Available*
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SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 − 200 V
G
A
1
2
3
TO−92
CASE 29
STYLE 10
K
MARKING
DIAGRAM
2N
50xx
YWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 7
1 Publication Order Number:
50xx Specific Device Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Cathode
Gate
Anode
2N5060/D
2N5060 Series
MAXIMUM RATINGS (T
Peak Repetitive Off−State Voltage (Note 1)
(T
= 40 to 110°C, Sine Wave,
J
50 to 60 Hz, Gate Open) 2N5060
On-State Current RMS (180° Conduction Angles; TC = 80°C) I
*Average On-State Current
= 25°C unless otherwise noted)
J
Rating
2N5061
2N5062
2N5064
Symbol Value Unit
V
V
DRM,
RRM
V
30
60
100
200
T(RMS)
I
T(AV)
0.8 A
A
(180° Conduction Angles)
= 67°C)
(T
C
(T
= 102°C)
C
*Peak Non-repetitive Surge Current,
T
= 25°C
A
I
TSM
0.51
0.255
10 A
(1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
*Average On-State Current
I
T(AV)
A
(180° Conduction Angles)
= 67°C)
(T
C
(T
= 102°C)
C
*Forward Peak Gate Power (Pulse Width 1.0 sec; TA = 25°C) P
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms) P
*Forward Peak Gate Current (Pulse Width 1.0 sec; TA = 25°C) I
*Reverse Peak Gate Voltage (Pulse Width 1.0 sec; TA = 25°C) V
*Operating Junction Temperature Range T
*Storage Temperature Range T
GM
G(AV)
GM
RGM
J
stg
0.51
0.255
0.1 W
0.01 W
1.0 A
5.0 V
−40 to +110 °C
−40 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
and V
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
RRM
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case (Note 2) R
Thermal Resistance, Junction−to−Ambient R
JC
JA
75 °C/W
200 °C/W
*Lead Solder Temperature (Lead Length 1/16″ from case, 10 s Max) − +230* °C
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
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2
2N5060 Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(V
AK
= Rated V
DRM
or V
)T
RRM
C
T
C
= 25°C
= 110°C
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(I
= 1.2 A peak @ TA = 25°C)
TM
Gate Trigger Current (Continuous DC) (Note 5)
*(V
= 7.0 Vdc, RL = 100 )T
AK
C
T
C
= 25°C
= −40°C
Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C
*(V
= 7.0 Vdc, RL = 100 )T
AK
= −40°C
C
*Gate Non−Trigger Voltage
(V
= Rated V
AK
, RL = 100 )TC = 110°C
DRM
Holding Current (Note 5) TC = 25°C
*(V
= 7.0 Vdc, initiating current = 20 mA) TC = −40°C
AK
Turn-On Time
Delay Time
Rise Time
(I
= 1.0 mA, VD = Rated V
GT
DRM
,
Forward Current = 1.0 A, di/dt = 6.0 A/s
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 s,
0.1% Duty Cycle, di/dt = 6.0 A/s,
dv/dt = 20 V/s, I
= 1 mA) 2N5060, 2N5061
GT
2N5062, 2N5064
Symbol Min Typ Max Unit
I
, I
DRM
RRM
V
TM
I
GT
V
GT
V
GD
−
−
−
10
−
50
− − 1.7 V
−
−
−
−
−
200
−
350
−
0.8
−
1.2
0.1 − −
I
H
t
d
t
r
t
q
−
−
−
10
30
5.010mA
−
−
−
−
−
−
3.0
−
0.2
−
−
A
A
A
V
V
s
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated V
, Exponential)
DRM
3. RGK = 1000 is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle 1%.
current is not included in measurement.
5. R
GK
*Indicates JEDEC Registered Data.
Voltage Current Characteristic of SCR
Symbol Parameter
V
I
DRM
V
I
RRM
V
I
H
DRM
RRM
TM
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
I
RRM
Reverse Avalanche Region
Anode −
dv/dt − 30 − V/s
on state
at V
RRM
Reverse Blocking Region
(off state)
+ Current
V
TM
I
H
Forward Blocking Region
(off state)
I
DRM
Anode +
at V
DRM
+ Voltage
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3
°
130
120
110
100
90
80
70
60
50
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
C
0 0.1 0.2 0.3 0.4
T
α = 30°
I
, AVERAGE ON-STATE CURRENT (AMP)
T(AV)
α = CONDUCTION ANGLE
60°
Figure 1. Maximum Case T emperature Figure 2. Maximum Ambient T emperature
CURRENT DERATING
CASE MEASUREMENT
POINT − CENTER OF
FLAT PORTION
120°
90°
CURRENT DERATING
2N5060 Series
a
dc
180°
0.5
130
110
°
90
70
TEMPERATURE ( C)
, MAXIMUM ALLOWABLE AMBIENT
50
A
T
30
0 0.1 0.2 0.3 0.4
α = CONDUCTION ANGLE
α = 30° 60°
I
, AVERAGE ON-STATE CURRENT (AMP)
T(AV)
90°
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
dc
120°
180°
α
, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.07
T
i
0.05
0.03
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
T
= 110°C
J
25°C
10
7.0
5.0
3.0
2.0
, PEAK SURGE CURRENT (AMP)
TSM
I
1.0
1.0 2.0 3.0 5.0 7.0 10 20 50 70 100
NUMBER OF CYCLES
30
Figure 4. Maximum Non−Repetitive Surge Current
0.8
α = CONDUCTION ANGLE
0.6
0.4
a
α = 30°
60°
90°
120°
180°
dc
0.02
0.01
0 0.5 1.0 1.5 2.0
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 3. Typical Forward Voltage
DISSIPATION (WATTS)
, MAXIMUM AVERAGE POWER
0.2
(AV)
P
2.5
0
0 0.2 0.5
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4
0.1 0.4
, AVERAGE ON-STATE CURRENT (AMP)
I
T(AV)
0.3
Figure 5. Power Dissipation
1.0
0.5
0.2
0.1
0.05
0.02
2N5060 Series
0.01
r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED
0.8
0.7
0.6
0.5
0.4
, GATE TRIGGER VOLTAGE (VOLTS)
G
V
0.3
Figure 7. Typical Gate Trigger Voltage
0.02 0.2 20105.02.01.00.050.010.002 0.005 0.5
, JUNCTION TEMPERATURE (°C)
T
J
0.1
t, TIME (SECONDS)
Figure 6. Thermal Response
TYPICAL CHARACTERISTICS
VAK = 7.0 V
R
= 100
L
= 1.0 k
R
GK
500−75 −50 −25 25 10075 110
200
100
50
20
10
5.0
2N5060-61
2.0
1.0
0.5
, GATE TRIGGER CURRENT (NORMALIZED)
GT
I
0.2
VAK = 7.0 V
R
= 100
L
2N5062-64
500−75 −50 −25 25 10075
T
, JUNCTION TEMPERATURE (°C)
J
Figure 8. Typical Gate Trigger Current
110
4.0
3.0
2.0
1.0
0.8
0.6
, HOLDING CURRENT (NORMALIZED)
H
I
0.4
VAK = 7.0 V
R
= 100
L
= 1.0 k
R
GK
2N5060,61
2N5062-64
500−75 −50 −25
25 10075 110
, JUNCTION TEMPERATURE (°C)
T
J
Figure 9. Typical Holding Current
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5
2N5060 Series
ORDERING INFORMATION
Device Package Shipping
2N5060 TO−92 5,000 Units / Box
2N5060RLRA TO−92 2,000 / Tape & Reel
2N5060RLRAG TO−92
(Pb−Free)
2N5060RLRM TO−92 2,000 / Ammo Pack
2N5061 TO−92 5,000 Units / Box
2N5061G TO−92
(Pb−Free)
2N5061RLRA TO−92 2,000 / Tape & Reel
2N5061RLRAG TO−92
(Pb−Free)
2N5061RLRM TO−92 2,000 / Ammo Pack
2N5062 TO−92 5,000 Units / Box
2N5062G TO−92
(Pb−Free)
2N5062RLRA TO−92 2,000 / Tape & Reel
2N5062RLRAG TO−92
(Pb−Free)
2N5064 TO−92 5,000 Units / Box
2N5064RLRA TO−92 2,000 / Tape & Reel
2N5064RLRM TO−92 2,000 / Ammo Pack
2N5064RLRMG TO−92
(Pb−Free)
2N5060RL1 TO−92 2,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2,000 / Tape & Reel
5,000 Units / Box
2,000 / Tape & Reel
5,000 Units / Box
2,000 / Tape & Reel
2,000 / Ammo Pack
†
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6
2N5060 Series
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
SEATING
PLANE
A
B
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
MILLIMETERSINCHES
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7
2N5060 Series
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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2N5060/D
8
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