ON Semiconductor 2N5060 Technical data

2N5060 Series

Preferred Device

Sensitive Gate
Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.

Features

• Sensitive Gate Trigger Current − 200 A Maximum

• Low Reverse and Forward Blocking Current − 50 A Maximum,

TC = 110°C

• Low Holding Current − 5 mA Maximum

• Passivated Surface for Reliability and Uniformity

• Device Marking: Device Type, e.g., 2N5060, Date Code

• Pb−Free Packages are Available*

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SILICON CONTROLLED

RECTIFIERS

0.8 A RMS, 30 − 200 V

G

A

1

2

3

TO−92

CASE 29

STYLE 10

K

MARKING

DIAGRAM

2N
50xx
YWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2005

January, 2005 − Rev. 7

1 Publication Order Number:

50xx Specific Device Code
Y = Year
WW = Work Week

PIN ASSIGNMENT

1
2
3

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

Cathode

Gate

Anode

2N5060/D

2N5060 Series

MAXIMUM RATINGS (T

Peak Repetitive Off−State Voltage (Note 1)

(T

= 40 to 110°C, Sine Wave,

J

50 to 60 Hz, Gate Open) 2N5060

On-State Current RMS (180° Conduction Angles; TC = 80°C) I
*Average On-State Current

= 25°C unless otherwise noted)

J

Rating

2N5061
2N5062
2N5064

Symbol Value Unit

V

V

DRM,

RRM

V

30

60
100
200

T(RMS)

I

T(AV)

0.8 A
A

(180° Conduction Angles)

= 67°C)

(T

C

(T

= 102°C)

C

*Peak Non-repetitive Surge Current,

T

= 25°C

A

I

TSM

0.51

0.255
10 A

(1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s
*Average On-State Current

I

T(AV)

A

(180° Conduction Angles)

= 67°C)

(T

C

(T

= 102°C)

C

*Forward Peak Gate Power (Pulse Width  1.0 sec; TA = 25°C) P
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms) P
*Forward Peak Gate Current (Pulse Width  1.0 sec; TA = 25°C) I
*Reverse Peak Gate Voltage (Pulse Width  1.0 sec; TA = 25°C) V
*Operating Junction Temperature Range T
*Storage Temperature Range T

GM

G(AV)

GM
RGM

J

stg

0.51

0.255

0.1 W

0.01 W

1.0 A

5.0 V

−40 to +110 °C

−40 to +150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

1. V

and V

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

RRM

source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction−to−Case (Note 2) R
Thermal Resistance, Junction−to−Ambient R



JC



JA

75 °C/W

200 °C/W

*Lead Solder Temperature (Lead Length  1/16″ from case, 10 s Max) − +230* °C

2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.

*Indicates JEDEC Registered Data.

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2

2N5060 Series

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current (Note 3)

(V

AK

= Rated V

DRM

or V

)T

RRM

C

T

C

= 25°C
= 110°C

ON CHARACTERISTICS

*Peak Forward On−State Voltage (Note 4)

(I

= 1.2 A peak @ TA = 25°C)

TM

Gate Trigger Current (Continuous DC) (Note 5)

*(V

= 7.0 Vdc, RL = 100 )T

AK

C

T

C

= 25°C
= −40°C

Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C

*(V

= 7.0 Vdc, RL = 100 )T

AK

= −40°C

C

*Gate Non−Trigger Voltage

(V

= Rated V

AK

, RL = 100 )TC = 110°C

DRM

Holding Current (Note 5) TC = 25°C

*(V

= 7.0 Vdc, initiating current = 20 mA) TC = −40°C

AK

Turn-On Time

Delay Time
Rise Time
(I

= 1.0 mA, VD = Rated V

GT

DRM

,

Forward Current = 1.0 A, di/dt = 6.0 A/s

Turn-Off Time

(Forward Current = 1.0 A pulse,
Pulse Width = 50 s,

0.1% Duty Cycle, di/dt = 6.0 A/s,
dv/dt = 20 V/s, I

= 1 mA) 2N5060, 2N5061

GT

2N5062, 2N5064

Symbol Min Typ Max Unit

I

, I

DRM

RRM

V

TM

I

GT

V

GT

V

GD

−

−

−

10

−

50

− − 1.7 V

−

−

−

−

−

200

−

350

−

0.8

−

1.2

0.1 − −

I

H

t

d

t

r

t

q

−

−

−

10
30

5.010mA

−

−

−

−

−

−

3.0

−

0.2

−

−

A
A

A

V

V

s

s

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(Rated V

, Exponential)

DRM

3. RGK = 1000  is included in measurement.

4. Forward current applied for 1 ms maximum duration, duty cycle  1%.

current is not included in measurement.

5. R

GK

*Indicates JEDEC Registered Data.

Voltage Current Characteristic of SCR

Symbol Parameter

V
I

DRM

V
I

RRM

V
I

H

DRM

RRM

TM

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current

I

RRM

Reverse Avalanche Region

Anode −

dv/dt − 30 − V/s

on state

at V

RRM

Reverse Blocking Region

(off state)

+ Current

V

TM

I

H

Forward Blocking Region

(off state)

I

DRM

Anode +

at V

DRM

+ Voltage

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3