ON Semiconductor 2N5038 Datasheet

Motorola Bipolar Power Transistor Device Data

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. . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in industrial and commercial applications.

• High Speed — tf = 0.5 µs (Max)

• High Current — I

C(max)

= 30 Amps

• Low Saturation — V

CE(sat)

= 2.5 V (Max) @ IC = 20 Amps

*MAXIMUM RATINGS

Rating

Symbol

2N5038

2N5039

ÎÎÎÎ

Unit

Collector–Base Voltage

CBO

150

120

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

CEV

150

120

ÎÎÎÎ

Vdc

Emitter–Base Voltage

EBO

ÎÎÎÎ

Vdc

Collector Current — Continuous

Peak (1)

20 30

ÎÎÎÎ

Adc

Base Current — Continuous

ÎÎÎÎ

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

140

0.8

ÎÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +200

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θJC

ОООООООО

1.25

ÎÎÎÎ

C/W

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%.

Figure 1. Switching Time Test Circuit

+11 V 10

Ω

–5 V

1N4933

2.5

IC = 12 AMPS IB1 = IB2 = 1.2 AMPS

–9 V

2N5038

+30 V

PW = 20

DUTY CYCLE = 1%

IC = 10 AMPS IB1 = IB2 = 1.0 AMPS

2N5039

Preferred devices are Motorola recommended choices for future use and best overall value.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N5038/D

 Motorola, Inc. 1995

 

*Motorola Preferred Device

20 AMPERE

NPN SILICON

POWER TRANSISTORS

75 and 90 VOLTS

140 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

 

Motorola Bipolar Power Transistor Device Data

*ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0) 2N5038

2N5039

ÎÎÎÎ

CEO(sus)

90 75

— —

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 140 Vdc, V

BE(off)

= 1.5 V) 2N5038

(VCE = 110 Vdc, V

BE(off)

= 1.5 V) 2N5039

(VCE = 100 Vdc, V

BE(off)

= 1.5 Vdc, TC = 150_C) 2N5038

(VCE = 85 Vdc, V

BE(off)

= 1.5 Vdc, TC = 150_C) 2N5039

ÎÎÎÎ

CEX

— — — —

50 50 10 10

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0) 2N5038

2N5039

(VEB = 7 Vdc, IC = 0) Both

ÎÎÎÎ

EBO

— — —

5 15 50

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 12 Adc, VCE = 5 Vdc) 2N5038 (IC = 10 Adc, VCE = 5 Vdc) 2N5039

ÎÎÎÎ

20 20

100 100

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎ

CE(sat)

—

2.5

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 5 Adc)

ÎÎÎÎ

BE(sat)

—

3.3

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common–Emitter Small–Signal Short–Circuit

Forward Current Transfer Ratio (IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)

ÎÎÎÎ

|hfe|

—

ÎÎÎ

—

SWITCHING CHARACTERISTICS

RESISTIVE LOAD Rise Time

(VCC = 30 Vdc)

ÎÎÎÎ

—

0.5

ÎÎÎ

µs

Storage Time

(IC = 12 Adc, IB1 = IB2 = 1.2 Adc) 2N5038

ÎÎÎÎ

—

1.5

ÎÎÎ

µs

Fall Time

(IC = 10 Adc, IB1 = IB2 = 1 Adc) 2N5039

ÎÎÎÎ

—

0.5

ÎÎÎ

µs

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300, µs, Duty Cycle v 2%.

100

Figure 2. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 2

0.1 1 10 100

BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

, COLLECTOR CURRENT (AMPS)

50 20

0.5

0.2

2 3 5 7 20 30 50

TC = 25°C

2N5039 2N5038

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

Second breakdown pulse limits are valid for duty cycles to 10%. At high case temperatures, thermal limitations may reduce the power that can be handled to values less than the limitations imposed by second breakdown.

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