ON Semiconductor 2N4920, 2N4919, 2N4918 Datasheet
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ON Semiconductor
2N4918
Medium-Power Plastic PNP
Silicon Transistors
...designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
• Low Saturation Voltage —
V
CE(sat)
• Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25C
• Excellent Safe Operating Area
• Gain Specified to I
• Complement to NPN 2N4921, 2N4922, 2N4923
*MAXIMUM RATINGS
ООООООООООООООООООООО
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous (1)
ООООООООО
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25C
ООООООООО
Operating & Storage Junction
Temperature Range
= 0.6 Vdc (Max) @ IC = 1.0 Amp
= 1.0 Amp
C
Ratings
Symbol
V
CEO
V
CB
V
EB
IC*
Î
I
B
P
D
Î
TJ, T
stg
ООООООО
ООООООО
2N4918
40
40
2N4919
60
60
5.0
1.0
3.0
1.0
30
0.24
–65 to +150
2N4920
80
80
Unit
Vdc
Vdc
Vdc
Adc
Î
Adc
Watts
W/C
Î
C
thru
2N4920
*ON Semiconductor Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
STYLE 1:
3
2
1
TO–225AA TYPE
PIN 1. EMITTER
CASE 77–09
*
2. COLLECTOR
3. BASE
ООООООООООООООООООООО
THERMAL CHARACTERISTICS (2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
θ
JC
Max
4.16
Unit
C/W
*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1 Publication Order Number:
April, 2002 – Rev. 10
2N4918/D
2N4918 thru 2N4920
40
30
20
10
, POWER DISSIPATION (WATTS)
D
P
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
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2
2N4918 thru 2N4920
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ELECTRICAL CHARACTERISTICS (T
= 25C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0) 2N4918
ОООООООООООООООООООО
ОООООООООООООООООООО
2N4919
2N4920
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0) 2N4918
ОООООООООООООООООООО
(VCE = 30 Vdc, IB = 0) 2N4919
ОООООООООООООООООООО
(VCE = 40 Vdc, IB = 0) 2N4920
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = Rated V
(VCE = Rated V
ОООООООООООООООООООО
CEO
CEO
, V
, V
= 1.5 Vdc)
BE(off)
= 1.5 Vdc, TC = 125C
BE(off)
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
Emitter Cutoff Current
ОООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 1.0 Vdc)
ОООООООООООООООООООО
(IC = 500 mAdc, VCE = 1.0 Vdc)
ОООООООООООООООООООО
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
ОООООООООООООООООООО
Base–Emitter Saturation Voltage (1)
(IC = 1.0 Adc, IB = 0.1 Adc)
Base–Emitter On Voltage (1)
ОООООООООООООООООООО
(IC = 1.0 Adc, VCE = 1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
(1) Pulse Test: PW 300 µs, Duty Cycle 2.0%
Symbol
V
CEO(sus)
ÎÎÎ
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CEX
ÎÎÎ
ÎÎÎ
I
CBO
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(sat)
V
BE(on)
ÎÎÎ
f
T
C
ob
h
fe
Min
40
Î
60
Î
80
—
Î
—
Î
—
Î
—
—
Î
—
—
Î
40
Î
30
Î
10
—
Î
—
—
Î
3.0
—
25
Max
—
ÎÎ
—
ÎÎ
—
ÎÎ
0.5
0.5
ÎÎ
0.5
ÎÎ
0.1
0.5
ÎÎ
0.1
1.0
ÎÎ
—
ÎÎ
150
ÎÎ
—
0.6
ÎÎ
1.3
1.3
ÎÎ
—
100
—
Unit
Vdc
Î
Î
mAdc
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mAdc
Î
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mAdc
mAdc
Î
—
Î
Î
Vdc
Î
Vdc
Vdc
Î
MHz
pF
—
V
BE(off)
0
V
in
V
CC
APPROX
-11 V
t
1
V
in
Cjd<<C
APPROX 9.0 V
0V
t1 < 15 ns
100 < t
t3 < 15 ns
t
DUTY CYCLE ≈ 2.0%
3
< 500 µs
2
in
APPROX
-11 V
t
2
TURN-OFF PULSE
Figure 2. Switching Time Equivalent Test Circuit
R
C
R
B
eb
+4.0 V
RB and R
varied to
obtain desired
current levels
5.0
3.0
2.0
SCOPE
1.0
0.7
0.5
t, TIME (s)µ
0.3
C
0.2
0.1
0.07
0.05
10
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3
VCC = 30 V
IC/IB = 10, UNLESS NOTED
IC/IB = 20
VCC = 30 V
t
d
VCC = 60 V
t
r
V
BE(off)
= 2.0 V
VCC = 30 V
V
= 0
BE(off)
20 30 50 70 100 200 700 1000
300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn–On Time
T
= 25°C
J
T
= 150°C
J
VCC = 60 V
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