ON Semiconductor 2N4410 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
80 Vdc
Collector–Base Voltage V
CBO
120 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
250 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction to Case R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
80 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
V
(BR)CEX
120 — Vdc
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
V
(BR)CBO
120 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
I
CBO
—
—
0.01
1.0
µAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
I
EBO
— 0.1 µAdc
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Order this document
by 2N4410/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
2N4410
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
h
FE
60
60
—
400
—
Collector–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
V
CE(sat)
— 0.2 Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
V
BE(sat)
— 0.8 Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
V
BE(on)
— 0.8 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
f
T
60 300 MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
C
cb
— 12 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
C
eb
— 50 pF
2. fT = |hfe| • f
test
.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
–55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0
2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1
10
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
10 mA
30 mA
100 mA
5.0
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