ON Semiconductor 2N4123, 2N4124 Service Manual
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector− Emitter Voltage
2N4123
2N4124
Collector− Base Voltage
2N4123
2N4124
Emitter− Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
q
JA
q
JC
30
25
40
30
5.0 Vdc
200 mAdc
625
5.0
1.5
12
200 °C/W
83.3 °C/W
Vdc
Vdc
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 1
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COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
2N
412x
AYWW G
G
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 4
1 Publication Order Number:
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
2N4123RLRM TO−92 2000 / Tape & Ammo
2N4124G TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5000 Units / Bulk
†
2N4123/D
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0) 2N4123
Collector− Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) 2N4123
Emitter− Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123
(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123
Collector− Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current− Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123
2N4124
2N4124
2N4124
2N4124
2N4124
2N4124
2N4124
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat )
V
BE(sat)
f
C
C
h
|hfe|
FE
ibo
30
25
−
−
Vdc
Vdc
40
30
−
−
Vdc
5.0 −
nAdc
− 50
nAdc
− 50
−
50
120
25
60
150
360
−
−
Vdc
− 0.3
Vdc
− 0.95
T
250
300
−
−
MHz
pF
− 8.0
cb
fe
− 4.0
50
120
200
480
pF
−
−
2.5
3.0
−
−
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
2N4124
NF
50
120
−
−
200
480
dB
6.0
5.0
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