ON MBRS130LT3 Schematic [ru]
MBRS130LT3
s
)
Preferred Device
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Ba rri er principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, T
• Small Compact Surface Mountable Package with J−Bend Leads
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Pb−Free Package is Available
= 25°C)
J
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 120°C
TL = 110°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Condit i ons
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance,
Junction−to−Lead (TL = 25°C)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
V
RRM
V
RWM
V
I
F(AV)
I
FSM
R
R
−65 to +125 °C
J
q
JL
30 V
A
1.0
2.0
40 A
12 °C/W
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
1BL3G
G
1BL3 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location
ORDERING INFORMATION
Device Package Shipping
MBRS130LT3 SMB 2500/Tape & Reel
MBRS130LT3G SMB
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
2500/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 6
1 Publication Order Number:
MBRS130LT3/D
ELECTRICAL CHARACTERISTICS
10
I
, INSTANTANEOUS FORWARD CURRENT
I
, IREVERSE CURRENT (mA)
7
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 2.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
TJ = 100°C
MBRS130LT3
10
V
F
I
R
0.395
0.445
1.0
10
V
mA
1
(A)
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
F
VF, INSTANTANEOUS VOLTAGE (V)
25°C
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100
10
1.0
0.1
0.01
R
0.001
0 3 6 9 12 15 18 21 24 27 30
TJ = 100°C
25°C
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Leakage Current
1
CURRENT (A)
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.
, MAXIMUM INSTANTANEOUS FORWARD
F
I
, IREVERSE CURRENT (mA)
0.01
R
I
0.001
VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)
100
10
1.0
0.1
0 3 6 9 12 15 18 21 24 27 30
TJ = 100°C
25°C
TJ = 100°C
25°C
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Maximum Reverse Leakage
Curent
http://onsemi.com
2
Loading...