OMNIREL OM200F120CMC Datasheet
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com
12/9/98 Rev.03 1
ELECTRICAL CHARACTERISTICS: OM200F120CMC (Tc= 25°°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, VCE=0V VCES 1200 V
Zero Gate Voltage Drain Current, VGE=0, VCE =1200V ICES 10
µA
Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V IGES 100
µA
ON CHARACTERISTICS
Gate Threshold Voltage, VCE=VGE, IC=6mA VGE(TH) 4.5 5.5 6.5 V
Collector Emitter Saturation Voltage, VGE=15V, Ic=200A VCE(SAT) 2.5 3.0 V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance VCE=5V, IC=200A gfs 50 69 S
Input Capacitance VGE=0 Cies 17 nF
Output Capacitance VCE=25V Coes 5 nF
Rev. Transfer Capacitance f=1.0MHz Cres 2 nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time t(on) 175
nS
Rise Time VCC= 600V, IC=200A tr 140 nS
Turn-on Losses Eon 21 mJ
VGE=+15/-10V, RG=5.1Ω
Turn-off Delay Time
L=100µH
td(off) 720
nS
Fall Time tf 120 nS
Turn-off Losses Eoff 14 mJ
DIODE CHARACTERISTICS
Maximum Forward Voltage
IF=200A, Tj=25°C
VF 2.0 2.8 V
Tj=125°C
1.8
VR=600V, Tj=25°C
Qrr 10
µC
Reverse Recovery
IF=200A, Tj=125°C
15
Characteristics
dI/dt=-1500A/µS Tj=25°C
Irr 75 A
Tj=125°C
95
Tj=25°C
trr 100 nS
Tj=125°C
150
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT) RthJC 0.07
°C/W
Thermal Resistance, Junction to Case (Per Diode) RthJC 0.11
°C/W
Maximum Junction Temperature TjMAX 150
°C
Isolation Voltage Vis
RMS
2500 V
Screw Torque Mounting - 15 20 in-lb
Screw Torque (M6) Terminals 10 12 in-lb
Screw Torque (M3) Terminals - 6 8 in-lb
Module Weight - 320 Grams
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com
12/9/98 Rev.03 2
OM200F120CMC
IGBT Collector Current vs. Collector-emitter Voltage
Tj=125°C
0
100
200
300
400
0 2 4 6 8 10 12
Vce(V)
Ic(A)
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Vge=7V
Vge=5V
IGBT Collector Current vs. Collector-emitter Voltage
Tj=25°C
0
100
200
300
400
0 2 4 6 8 10 12
Vce(V)
Ic(A)
Vge=15V
Vge=13V
Vge=11V
Vge=9V
Vge=7V
IGBT Collector Current vs. Collector-emitter Voltage
Tj=- 55°C
0
100
200
300
400
0 2 4 6 8 10 12
Vce(V)
Ic(A)
Vge=13V
Vge=15V
Vge=11V
Vge=9V
Vge=7V
Switching energy vs Temperature
Vce =600V,Ic=200A
0
10
20
30
40
50
0 25 50 75 100 125 150
T(°C)
Energyf (mJ)
Eoff
Eon
Switching energy vs Gate Resistor(Rg)
Vce =600V,Ic=200A, Tj=125°C
0
10
20
30
40
50
0 5 10 15 20 25
Rg(Ohms)
Energy (mJ)
Eoff
Eon
Switching energy vs Collector current (Ic)
Vce =600V,Tj=25°C
0
10
20
30
40
50
0 25 50 75 100 125 150 175 200
Ic(A)
Energyf (mJ)
Eoff
Eon
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