OKI MSM62X42B Datasheet

¡ Semiconductor MSM62X42B

¡ Semiconductor

MSM62X42B

REAL TIME CLOCK IC WITH BUILT-IN CRYSTAL

DESCRIPTION

The MSM62X42B is a bus-connection Microcomputer peripheral IC of a Real Time Clock with built-in crystal in the perpetual calendar which can be read and written from a second unit. The interface between this IC and a microcomputer uses 4 data buses, 4 address buses, 3 control buses and 2 chip selects and carries out setting up, amending and reading time. ALE input is available for 8048 system, 8051 system or 8085 system and is used for other microcomputers if this input is fixed at "H".

FEATURES

• 32.768kHz built-in crystal oscillator

(2 ranks of ±10PPM and ±50PPM --DIP) (2 ranks of ±20PPM and ±50PPM --SOP)

• Real time clock of second, minute, date, month, year and day of week

• Interface corresponding to microcomputer bus

• 30-second compensation controlled by software

• Periodical interrupt function (or periodical waveform output) for alarm

The clock function provides seconds, minutes, hours, day of week, date, month, year, 12/24 hour selectable, automatic leap year in the Christian Era and 30-second compensation controlled by software. The periodical interrupt function (or periodical waveform output) and the STOP/START function of the clock are also provided. The device is a silicon gate CMOS and the current consumption is low. The built-in crystal oscillator is 32.768 kHz and battery backup operation is considered.

• STOP/START function for clock

• 12/24 hour selectable

• AEL input for 8048 system, 8051 system or 8085 system (when a microcomputer does not provide the ALE output, fix the AEL input at "H".)

• Low current consumption for CMOS device

• Low STANDBY voltage and small STANDBY current

• 18-pin plastic DIP(DIP18-P-300)

• 24-pin plastic SOP

PIN CONFIGURATION

MSM62X42BRS

(TOP View) 18 Lead Plastic DIP

1

STD.P

2

CS

0

ALE

3

4

A

0

5

A

1

6

A

2

A

7

3

8

RD D

910

GND

Note: The actual type name indicates the abbreviated one, M62X42B.

MSM62X42BGS-1K

(TOP View) 24 Lead Plastic SOP

1

18

V

DD

17

(VDD)

16

)

(V

DD

15

CS

1

14

D

0

13

D

1

D

12

2

11

3

WR

STD.P

2

CS

0

3

NC

4

ALE

5

A0

6

NC

7

A

1

8

NC

9

A

2

10

A

3

11

RD

12

GND WR

NC : NO CONNECTION (unused pins)

24

V

DD

(VDD)

23

(V

)

DD

22

21

NC

20

CS

1

19

0

D

18

NC

17

NC

16

D

1

15

D

2

14

D

3

13

41

RANK

¡ SemiconductorMSM62X42B

M62X42B

JAPAN xxxxA

Lot no. Stability A or B

EXTERNAL DIMENSION

1.27 0.35

24 13

A: 10PPM B: 50PPM

16.3 MAX

M62X42B

xxxxS

Stability S or B

±

S: 20PPM

±

B: 50PPM

± ±

Lot no.

(UNIT : mm)

0.2

1.0

42

8.0MAX

12.2MAX

0.3MAX

10

2.58

~

0

1

12

MAX

¡ Semiconductor MSM62X42B

FUNCTION BLOCK DIAGRAM

CS

ALE

CS

D D D D

WR RD

A A A A

3

2

1

0

3

2

1

0

32.768kHz

0

1

X'tal OSC

&

T E

COUNTER

RESET

STOP

bit

G A T E

G A

G A T E & L A T C H

D E C O D E R

1Hz

30 sec ADJ bit

S

1

~

C

F

HOLD

bit

BUSY bit

30 sec ADJ bit

S

1S10

D

1D10

MI1MI

10

MO1MO

10

C

D

C

E

* S1 ~ W ~ Y10 are time counter register.

~ CF are control register.

* C

D

24/12 bit

H1H

Y1Y

10

C

F

W

64Hz

1 sec carry

1 min carry

1 hour carry

V

DD

STD.P

43

REGISTER TABLE

¡ SemiconductorMSM62X42B

Address

Input

0

1

2

3

4

5

6

7

8

9

A

B

C

D

S

SI

mi

h

PM/

AM

d

*

mo

*

y

w

2

4

40

4

40

4

Data

4

D

S

mi

h

d

mo

y

w

Count

value

D

1

0

0 to 9

S

2

1

0 to 5

S

20

10

0 to 9

mi

2

1

0 to 5

mi

20

10

h

d

mo

MO

0 to 9

h

1

0 to 2

10

or 0 to 1

0 to 9

d

1

0 to 3

10

0 to 9

1

0 to 1

10

0 to 9

y

1

0 to 9

y

10

0 to 6

w

1

h

2

20

d

2

20

2

*

y

2

20

2

Description

1-second digit register

10-second digit register

1-minute digit register

10-minute digit register

1-hour digit register

PM/AM, 10-hour digit register

1-day digit register

10-day digit register

1-month digit register

10-month digit register

1-year digit register

10-year digit register

Week register

A

3

2

0

1

0

1

0

1

0

1

r

0

1

0

1

0

1

0

1

Register

A

1

0

Name

0

S

0

1

S

1

0

MI

1

MI

0

1

H

1

0

D

1

D

0

MO

0

1

MO

1

0

Y

1

Y

0

D

3

S

1

10

H

i

10

1

10

1

10

W

8

*

mi

1

8

*

h

8

*

d

8

*

mo

1

10

8

*

y

8

y

80

*

D

1

0

1

E

1

0

F

1

0 = "L" level, 1 = "H" level REST = RESET PM/AM = 1/0 ITRPT/STND = INTERRUPT/STANDARD

Notes:

1) The writing of bit * is at discretion, but it is handled as "0" in the internal. In addition, it is unconditionally held at "0" during a read.

2) The writings of "1" to IRQ FLAG bit, and "0" and "1" to BUSY bit are at discretion, but they are not carried out. The reading can be done. The writing of "0" to the IRQ FLAG bit is carried out.

3) The bits except bit * and the BUSY bit can fully be read and written. However, the writing to the IRQ FLAG is effective for "0" only.

4) PM/AM bit is 1 at PM and 0 at AM.

44

30 sec.

C

D

C

E

C

F

ADJ

t

1

TEST

IRQ

FLAG

t

0

24/12

BUSY

ITRPT

/STND

STOP

HOLD

MASK

REST

—

r

¡ Semiconductor MSM62X42B

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter Symbol Conditions Rating Unit

Power supply voltage

Input voltage V

I

Output voltage Vo

Storage temperature

Soldering conditions (lead)

Operating Conditions

Parameter Symbol Conditions Rating Unit

Power supply voltage

Time Recording Supply Voltage

Crystal Frequency

Operating Temperature

Note:

Time Recording Supply Voltage: Power supply voltage to guarantee a crystal oscillator and time recording

Frequency Accuracy

Item Conditions Rating Unit

V

DD

Ta = 25°

T

STG

T

SOL

V

DD

V

CLK

f

(XT)

T

OP

—

– 0.3 to 7

-03 to VDD +0.3

–55 to +85

Temp.:under 260°C Time :within 10 seconds

4.5 to 5.5

2.0 to 5.5

32.768

–40 to +85

V

°C

V

kHz

°C

Frequency stability

Temperature Characteristics

OCS starting time

Frequency Drift

Voltage characteristics

Rank A : 18pin DIP only

*

Rank S : 24pin SOP only Rank B : 18pin DIP, 24pin SOP

Rank A

Rank S

Rank B

Ta = 25°C

VDD = 5V

–10 to +70°C (25°C standard) –40 to +85°C (

´´

At 4.5V, let "t" make "0"

Ta=25°C, V

DD

= 5V

First year

Ta=25°C V

= 4.5~5.5V

DD

± 10

± 20

PPM

± 50

+10/ –120

)

+10/ –220

MAX 1

± 5

PPM

Sec.

PPM/year

PPM/V

45

D.C. Characteristics

(V

DD

Parameter Symbol Conditions Applicable TerminalUnit

Min.

Typ.

¡ SemiconductorMSM62X42B

= 5V ± 10%, Ta = –40 to +85°C)

ax

"H" Input voltage (1)

"L" Input voltage (1)

Input leak current (1)

Input leak current (2)

"L" output voltage (1)

"H" output voltage

"L" output voltage (2)

OFF leak current

Input capacitance (1)

Input capacitance (2)

Current consumption (1)

Current consumption (2)

"H" input voltage (2)

"L" input voltage (2)

V

IH1

V

IL1

I

LK1

I

LK2

V

OL1

V

OH

V

OL2

I

OFFLK

C11

C12

I

DD1

I

DD2

V

1H2

V

1L2

V1 = VDD/0V

IOL = 2.5mA

IOH = 400µ A

IOL = 2.5mA

VI = VDD/0V

Input frequency 1MHz

f(xt) =

32.768

V

DD

= 5V

kHz

~

CS1

~

V

=2~5.5V

DD

= 2V

0V

V

4/5V

2.2

—

2.4

—

0.8

—

1/–1

—

10/–10

—

0.4

—

0.4

All input terminals

V

except CS

Input terminals other than D0 ~D

µA

D0 ~ D

V

D0 ~ D

V

1

3

STD. P

—

10

µA

5

—

5

—

30

—

1.8

—

DD

—

1/5V

DD

Input terminals other than D

PF

D0 ~D

V

µA

DD

CS1

V

3

to D

0

3

46

¡ Semiconductor MSM62X42B

Switching Characteristics

WRITE mode (ALE = VDD)

(V

= 5V ± 10%, Ta = –40 to +85°C)

DD

Parameter Symbol Conditions Min. Unit

Max.

CS1 Set up Time

CS1 Hold Time

Address Stable Before WRITE

Address Stable After WRITE

WRITE Pulse Width

Data Set up Time

Data Hold Time

RD/WR Recovery Time

CS

1

A0~A

3

CS

0

WR

D0~D

3

(INPUT)

t

C1S

t

C1H

t

AW

t

WA

—

1000

20

10

—

ns

t

WW

t

DS

t

DH

t

RCV

V

IH2

t

C1S

V

IH1

V

IL1

t

Aw

V

IH1

—

t

ww

V

IL1

t

DS

V

IH1VIH1

V

IL1VIL1

IL1

120

100

10

60

t

wA

V

IH1

t

RCV

t

DH

—

V

IH2

t

C1H

V

IH1

V

IL1

V

IH1

V V

IH1 IL1

= 2.2V = 0.8V

V

=

4

/5

V

IH2

V

DD

1

/5

V

=

DD

IL2

47

WRITE mode (with use of ALE)

Parameter Symbol Conditions Min. Unit

¡ SemiconductorMSM62X42B

(V

= 5V ± 10%, Ta = –40 to +80°C)

DD

Max.

CS1 Set up Time

Address Set up Time

Address Hold Time

ALE Pulse Width

ALE Before WRITE

WRITE Pulse Width

ALE After WRITE

Data Set up Time

Data Hold Time

CS1 Hold Time

RD/WR Recovery Time

CS

1

A0~A

3

CS

0

ALE

WR

D

0~D3

(Input)

t

C1S

t

AS

t

AH

t

AW

t

ALW

t

WW

t

WAL

t

DS

t

DH

t

C1H

t

RCV

V

IH2

t

C1S

t

AS

AH

V

IH1

V

IL1

t AW

V

IH1

V

IH1

V

IL1

IH1

V

IL1

t

ALW

V

—

t

WW

IH1

V

IL1

t

DS

V

IH1

V

IL1

1000

25

40

10

120

20

100

10

1000

60

V

IH2

t

C1H

t

WAL

V

IH1

V

IL1

t

RCV

DH

V

IH1

V

IL1

—

ns

—

V

IH1

48

V V

IH1 IL1

= 2.2V = 0.8V

V

=

4

/5

V

IH2

V

IL2

DD

1

/5

V

=

DD

¡ Semiconductor MSM62X42B

READ mode (ALE = VDD)

(V

= 5V ± 10%, Ta = –40 to +85°C)

DD

Parameter Symbol Conditions Min. Unit

Max.

CS1 Set up Time

CS1 Hold Time

Address Stable Before READ

Address Stable After READ

RD to Data

Data Hold

RD/WR Recovery Time

CS

1

A0~A

3

CS

0

RD

D0~D

3

(Output)

t

C1S

t

C1H

t

AR

t

RA

t

RD

t

DR

t

RCV

V

IH2

t

C1S

t

AR

V

IH1

V

IL1

V

IH1

V

t

IL1

RD

—

CL = 150 pF

—

V

IL1

V

OH

V

OH

V

OL

1000

20

0

—

0

60

t

C1H

t

RA

V

IH1

t

RCV

t

DR

—

ns

120

—

V

IH2

V

IH1

" Z "

V

IH1 IL1

= 2.2V = 0.8V

V

=

4

/5

V

IH2

1

/5

V

=

V

IL2

VOH = 2.2V

DD DD

V

= 0.8V

OL

49