NXP Semiconductors UM10525 User Manual

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UM10525
120 V 20 W CFL demo board using the UBA2212
Rev. 1 — 19 April 2012 User manual
Document information
Info Content Keywords UBA2212, demo board, CFL, boost, 120 V (AC), 20 W Abstract This document is a user manual for the UBA2212 120 V, 20 W demo
board
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User manual Rev. 1 — 19 April 2012 2 of 21
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120 V 20 W CFL demo board using the UBA2212
Revision history
Rev Date Description
v.1 20120419 first issue
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120 V 20 W CFL demo board using the UBA2212
1. Introduction
The UBA2212 series is a family of high voltage monolithic integrated circuits for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. It is derived from the UBA2211 IC and modified to drive a 120 V (AC) application. The UBA2212 contains a boost feature, which boosts the lamp current for a certain time after ignition. This feature results in faster CFL warm-up and more light after ignition.
Run-up time is one of the key requirements for CFL. Normally, it is measured from the time lamp was powered until 80 % of light output is reached. Run-up time is long if a high temperature amalgam burner is used or a lamp is ignited in cold environment. The UBA2212 is designed to meet the needs of these situations in both indoor and outdoor applications.
In addition to the boost feature, the UBA2212 has the following features:
Fixed frequency preheat with an adjustable preheat time
RMS current control
Saturation Current Protection (SCP)
OverTemperature Protection (OTP)
Capacitive Mode Protection (CMP)
This user manual is intended to describe a 120 V, 20 W application demo board using the UBA2212CT. See the UBA2212 data sheet for the functional description of this IC.
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2. Safety Warning
The demo board is powered by AC mains voltage. Avoid touching the board when power is applied. An isolated housing is obligatory when used in uncontrolled, non-laboratory environments. Always provide galvanic isolation of the mains phase using a variable transformer. The following symbols identify isolated and non-isolated devices.
WARNING Lethal voltage and fire ignition hazard
The non-insulated high voltages that are present when operating this product, constitute a risk of electric shock, personal injury, death and/or ignition of fire.
This product is intended for evaluation purposes only. It shall be operated in a designated test area by personnel qualified according to local requirements and labor laws to work with non-insulated mains voltages and high-voltage circuits. This product shall never be operated unattended.
a. Isolated b. Non-isolated
Fig 1. Isolated and non-isolated symbols
019aab173
019aab174
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120 V 20 W CFL demo board using the UBA2212
3. Specifications
Table 1. Demo board specification
Parameter State Value Comment
AC line input voltage - 96 V (AC) to 144 V (AC) board optimized for 120 V (AC), 60 Hz. Lamp voltage (V
lamp
) steady 100 V measured at 120 V (AC) mains; GE T3 Spiral 20 W
burner used; Table 2 on page 10
Lamp current (I
lamp
)170mA
Operating frequency (f
osc
)
45 kHz
Power Factor >0.58 Preheat current (I
ph
) preheat 150 mA constant preheat current at 96 V (AC) to 144 V (AC);
Table 2 on page 10
Preheat time (tph)0.8s Lamp current (I
lamp
) boost 255 mA measured at 120 V (AC) mains; see Figure 5 on page 8
and Table 2 on page 10
boost time (t
bst
)40s
transition time from boost to burn (t
t(bst-burn)
)
2s
Fig 2. Photographs of a 20 W CFL Application with a UBA2212
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120 V 20 W CFL demo board using the UBA2212
4. Schematic and functional description
4.1 Functional description
The bridge rectifier (D1 to D4) rectifies the AC input power. The bulk storage capacitor C
BUF
filters the rectified DC voltage. Power inductor L
FILT
and capacitor C
BUF
form an LC
filter, which attenuates conducted differential mode EMI noise. Fusible resistor R
fuse
provides protection against overcurrent failure. During start-up, the internal current source connected to HV pin provides power. Once
capacitor C
DVDT
is charged, it provides the dV/dt supply for normal operation. Capacitor
C
FS
provides the high-side floating supply output and Capacitor C
VDD
is used for VDD
bypass. C5 and inductor L2 primary winding (N1) form an LC tank translating power into the
burner. The L2 secondary windings N2 and N3 preheat the burner filaments. If preheat is not required in the application, leave off secondary windings and short the filaments. C8 is DC blocking capacitor. R
CSI
is used for burner current sensing during boost and RMS
states. R
osc
and C
osc
determine the nominal oscillating frequency based on the Built-in 555-timer
function. The input to the SW pin generates the V
SW
signal which determines the preheat
time. Capacitor C
CB
sets the boost time.
4.2 Timing
The UBA2212 based 20 W demo board provides all the fu nctio ns ne eded for co rr ect CFL operation. These functions include preheat, ignition, boost and on-state operation.
Several protection features safeguard the correct operation of the CFL and controller IC. The typical system timing is shown in Figure 4
.
Fig 3. Typical UBA2212 Circuit for compact fluorescent lamp application
001aan371
R
fuse
D3
C
BUF
C5 C8
C7
C6
L2
R
CSI
C
DVDT
C
osc
C
CB
C
VDD
R
osc
C
SW
C
FS
L
FILT
D2
D4D1
U1
OUT
114
FS
SGND
213
SGND
HV
312
SENSE
PGND
411
SGND
DVDT
510
CSI
V
DD
69
CB
RC
78
SW
CFL
AC input
L_N
L_L
UBA2212
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120 V 20 W CFL demo board using the UBA2212
In preheat, current ISW charges capacitor CSW generate the preheat timing (tph). Capacitor C
CB
connected to pin CB is connected to the boost timer inpu t to con tr ol th e
boost time. After preheat, the C
CB
voltage sweeps up and down at the boost timing (t
bst
).
The boost ends after 25 C
CB
sweeping cycles.
The transition from the boost state to the burn state is triggered when the boost timer indicates the end of the boost state. During the boost to burn tra ns i tion , th e bo os t transition timer is active. The timer defines transition time which is also realized using capacitor C
CB
on CB pin.
When the RMS current control circuit leaves the system operating at the normal lamp current, it enters the burn state. In this state, a feedback loop controls the V
SW
voltage on pin SW. This feature makes the lamp current independent mains or lamp voltage variations.
Fig 4. Timing sequence of the system
001aan302
preheat
V
CB
V
SW
VCO input
burn
time (s)
ignition and boost
transition
V
lamp
f
osc(nom)
... ...
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120 V 20 W CFL demo board using the UBA2212
5. Measurement results
Using a typical 20 W lamp, the measurements show that the boost effect is visible to the human eye when the light is powered up. The same situation is not visible when the same lamp is used without boost feature.
Figure 4
shows the states after power- on. The pr eheat, ignition, boost, transition and burn states are clearly visible. The preheat and transition states are also zoomed in greater detail.
(1) I
lamp
signal. (2) SW signal timing for preheat. (3) CB signal timing for boost and transition. (4) Half-bridge voltage.
Fig 5. Time sequence for a boost state lamp
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120 V 20 W CFL demo board using the UBA2212
(1) I
lamp
signal. (2) SW signal timing for preheat. (3) CB signal timing for boost and transition. (4) Half-bridge voltage.
Fig 6. Time sequence for a boost lamp with a zoom function applied to the preheat state
(1) I
lamp
signal. (2) SW signal timing for preheat. (3) CB signal timing for boost and transition (4) Half-bridge voltage.
Fig 7. Time sequence for a boost lamp with a zoom func tio n applied to the preheat to
RMS transition
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The boost feature provides a fast run-up time. However when a hot lamp is powered, the lamp does not need boost or only a short boost time. The UBA2212 sets a boost overtemperature (T
j(end)bst
) to allow for the reduced boost time. The IC detects its die temperature and ends the boost state when the temper atur e trigger po int is r eached. The lamp then enters the burn transition.
When a lamp burns for a long time, is switched off and then after a short delay switched on again. The end of boost is reached after only 6 s of boost. In Figure 5
, SW counted
only 5 cycles. Normally SW sweeps through 25 cycles when OTP is not triggered.
Table 2. Electrical parameters 12 W boost lamp (UBA2212BT N1B)
Boost ratio = 1.49; boost time = 38.5 s (25 cycles); transition time = 2 s.
State V
IN
(V)
P
in
(W)
PF V
lamp
(V)
I
Iamp
(mA)
I
hb
(mA)
P
lamp
(W)
f
osc
(kHz)
T
ph
(s)
I
ph
(mA)
Normal 120 21.3 0.589 107 169 366 18.1 44.3 0.76 150 Boost - 23.1 - 80.5 252 470 20.3 39.7 - -
(1) I
lamp
signal. (2) SW signal timing for preheat. (3) Half-bridge voltage. (4) CB signal timing for boost and transition.
Fig 8. Boost with OTP triggered
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5.1 Boost lamp with high lamp voltage
During boost state, lamps consume mor e power. As a result, the half-bridge valley voltage value is pulled low. In addition, CM or hard switching occurs especially when a high lamp voltage with used with a low mains input.
The UBA2212 detects switched operation prevent stress on MOSFETs using the internal active Zero-Voltage Switching (ZVS) control circuit.
When capacitive mode is detected, the internal current source discharge s the internal capacitor. Consequently, the SW voltage is lower and the RMS circuit controlled boost frequency increases until the system is at the zero-voltage switching border.
Figure 6
shows the Capacitive Mode (CM) protection response in the boost state.
The ratio of boost lamp current to RMS lamp cur rent (I
bst
: I
RMS
) is lower because of CMP.
If a significant boost effect is needed, the system parameters need adjusted. A bigger lamp capacitor, for example, reduces the need for CM and LC tank to be adjusted to supply a larger power gain. However, the larger power gain is at the cost of a higher half-bridge current which leads to low-power efficiency and a narrow RMS operation range.
(1) I
lamp
signal. (2) RC signal. (3) Half-bridge signal.
Fig 9. CMP activated in boost state
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5.2 RMS control in boost and steady states
When ignition frequency is reached, the lamp ignites. VSW increases to a given voltage to set the lamp current at the level defined by the internal boost reference and resistor R
CSI
.
The calculation is shown in Equation 1
:
(1)
When the RMS current control circuit leaves the system operating at the normal lamp current, it enters the steady state. In this state, the voltage on pin CB is fixed and a feedback loop controls the voltage on pin SW . This featur e enables the lamp current to be independent of the mains or lamp voltage. The lamp current calculation is shown in
Equation 2
:
(2)
Therefore, the boost-burn ratio can be found as shown in Equation 3
:
(3)
5.3 Overtemperature protection
OTP is active in all states except boost. When the die temperature reaches the OTP activation threshold (T
th(act)otp
), the oscillator is stopped and the power switches (LSPT/HSPT) are set to the start-up state. When the oscillator is stopped, the DVDT supply no longer generates the supply current I
DVDT
. Voltage VDD gradually decreases
and the start-up state is entered. OTP is reset when the temperature < T
th(rel)otp
.
During boost state, the threshold of temperature is T
j(end)bst
which is lower than T
th(otp)
.
When the die temperature has reached T
j(end)bst
, the boost state ends, the IC enters
steady state and OTP is enabled.
Boost I
lamp
V
ref bst
R
CSI
------------------ -
=
Burn I
lamp
V
ref burn
R
CSI
---------------------- -
=
Boost to burn ratio
V
ref bst
V
ref burn
---------------------- -
=
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5.4 Saturation Current protection
A critical parameter in the design of the lamp inductor is its saturation current. When the momentary inductor exceeds its saturation current, th e inductance drops significantly. This drop causes the inductor current and the current flowing through the LSPT and HSPT power switches to increase rapidly. The increase can cause the current to exceed the half-bridge power transistors maximum ratings.
Saturation of the lamp inductor is likely to occur in cost-effective and miniaturized CFLs. The UBA2212 family internally monitors the power transistor current. When the current exceeds the momentary rating of the internal half-bridge power transistors, the conduction time is reduced. In addition, the frequency increases slowly by discharging C
SW
. This function causes the system to balance at the edge of the current rating of the power switches.
Figure 11
shows the Saturation Current Protection (SCP) in real application which uses an easily saturated inductor . SCP enables the burn er to ignite despite the i nductor sa tura ting effect. When the same parameters are used with an IC without SCP, the IC failed during the ignition.
(1) VDD signal. (2) I
lamp
signal. (3) Half-bridge voltage. (4) CB signal timing for boost and transition.
Fig 10. OTP function activated in boost state
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5.5 Capacitive mode protection
The UBA2212 detects hard switching operations to prevent stress on MOSFETs using the internal Zero-Voltage Switching (ZVS) control circuit. In preheat stage, when CMP is detected, discharge of capacitor C
CB
occurs by a current source which is a function of the hard switching level. The frequency increases very slowly until hard switching is no longer detected. Once CMP is no longer active, the system increases to the preheating frequency as defined preheat current.
In boost and burn state, V
SW
determines the operating frequency. Under normal conditions, the RMS current control circuit is used. During CMP, the CMP circuit controls the frequency.
The CMP circuit controls capacitor C
SW
when capacitive mode is detected. A current source (which is also dependent on the hard switching voltage level) discharges Capacitor C
SW
. The operating frequency f
osc
, increases until CMP is no longer detected.
See Figure 12
.
(1) Half-bridge voltage. (2) I
lamp
signal.
(3) RC signal.
Fig 11. IC operation with saturated inductor at ignition
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120 V 20 W CFL demo board using the UBA2212
Fig 12. CMP in the burn state
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120 V 20 W CFL demo board using the UBA2212
6. Schematic and Bill Of Materials (BOM)
The components used are illustrated in Figure 3 and Figure 13.
Table 3
describes the components required for 120 V reference board application.
Fig 13. Application diagram
001aan371
R
fuse
D3
C
BUF
C5 C8
C7
C6
L2
R
CSI
C
DVDT
C
osc
C
CB
C
VDD
R
osc
C
SW
C
FS
L
FILT
D2
D4D1
U1
OUT
114
FS
SGND
213
SGND
HV
312
SENSE
PGND
411
SGND
DVDT
510
CSI
V
DD
69
CB
RC
78
SW
CFL
A
C input
L_N
L_L
UBA2212
Table 3. Bill of materials
Number Reference Typical value Quantity
1R
fuse
10 ; 1 W - no value for fuse resistor 1 2 D1, D2, D3, D4 diode, 1 A; 1000 V; 1N4007 4 3C
BUF
electrolytic capacitor; 33 F; 250 V; 105 C1 4L
FILT
inductor; 3 mH; 0.5 A 1 5C
DVDT
ceramic capacitor; 330 pF; 500 V; 1206 1 6C
FS
ceramic capacitor; 22 nF; 50 V; 0805 1 7C
CB
ceramic capacitor; 220 nF; 50 V; 0805 1 8C
SW
ceramic capacitor; 68 nF; 50 V; 0805 1 9C
osc
ceramic capacitor; 220 pF; 50 V; 0805 1 10 C
VDD
ceramic capacitor; 100 nF; 50 V; 0805 1 11 R
osc
chip resistor; 100 k; 5 %; 0805 1 12 C6; C7 film capacitor; 82 nF; 100 V 2 13 C5 film capacitor; 6.8 nF; 1 kV 1 14 C8 film capacitor; 8.2 nF; 400 V 1 15 R
CSI
chip resistor; 1.8 ; 1 %; 0.25 W 1
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120 V 20 W CFL demo board using the UBA2212
7. PCB layout
Figure 14 shows the layout of the PCB.
8. Alternative CFL examples
Some other lamps were measured in the lab, including 8 W, 12 W, 15 W , 20 W. Two boost lamps using UBA2212BT are listed Table 4
with their LC tank, start up-to-burn scope
picture and related electrical parameters.
16 L2 PC40-EE16; 1.5 mH; 1 A; N = 180:6:6 ;
diameter 0.23 mm
1
18 U1 UBA2212CT; SO14 1 19 Burner burner; T3 Spiral 20 W 1
Table 3. Bill of materials
…continued
Number Reference Typical value Quantity
Fig 14. PCB layout
Table 4. Electrical parameters 12 W boost lamp (UBA2212BT N1B)
Boost ratio = 1.54.; C
BUF
= 22 F, 250 V; L2 = 1.7 mH, 2 ; C5 (res) = 6 nF, 1 kV;
C6 and C7 = 100 nF, 100 V; C8 (DC) = 10 nF, 400 V; R
CSI
= 2.2 , 1 W
State V
IN
(V)
P
in
(W)
PF V
lamp
(V)
I
Iamp
(mA)
I
hb
(mA)
P
lamp
(W)
f
osc
(kHz)
t
ph
(s)
Normal 120 11.3 0.59 75 127 248 9.5 48.3 0.8 Boost - 16.1 - 67 196 338 13.1 40.34 -
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Fig 15. 12 W Baishi CFL
Table 5. Electrical parameters 12 W boost lamp (UBA2212BT N1B)
Boost ratio = 1.56.; C
BUF
= 22 F, 250 V; L2 = 1.75 mH, 2 ; C5 (res) = 7.4 nF, 1 kV;
C6 and C7 = 100 nF, 100 V; C8 (DC) = 15 nF, 400 V; R
CSI
= 2.7 , 1 W
State V
IN
(V)
P
in
(W)
PF V
lamp
(V)
I
Iamp
(mA)
I
hb
(mA)
P
lamp
(W)
f
osc
(kHz)
t
ph
(s)
Normal 120 13.7 0.6 113.3 102 302 11.6 47.38 0.8 Boost - 17.7 - 95 159 309 15.1 39.16 -
Fig 16. 15 W GE CFL
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9. References
[1] UBA2212 — Half-bridge power IC family for CFL lamps data sheet.
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10. Legal information
10.1 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
10.2 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable fo r any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semico nductors’ aggregate and cumulative liabili ty towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the cust omer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semi conductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their supplie rs be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for l oss of busi ness, busi ness interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoin g limitations, e xclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.
10.3 Trademarks
Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.
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For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 April 2012
Document identifier: UM10525
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
11. Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Safety Warning. . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Schematic and function al d escription. . . . . . . 6
4.1 Functional description. . . . . . . . . . . . . . . . . . . . 6
4.2 Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Measurement results. . . . . . . . . . . . . . . . . . . . . 8
5.1 Boost lamp with high lamp voltage. . . . . . . . . 11
5.2 RMS control in boost and steady states. . . . . 12
5.3 Overtemperature protection . . . . . . . . . . . . . . 12
5.4 Saturation Current protection . . . . . . . . . . . . . 13
5.5 Capacitive mode protection . . . . . . . . . . . . . . 14
6 Schematic and Bill Of Materials (BOM) . . . . . 16
7 PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
8 Alternative CFL examples. . . . . . . . . . . . . . . . 17
9 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
10.1 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
10.2 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
10.3 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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