NXP Semiconductors TEA1995T DATA SHEET

TEA1995T

GreenChip dual synchronous rectifier controller

Rev. 3 — 5 December 2017 Product data sheet

1 General description

The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR) controller ICs for switched mode power supplies. It incorporates an adaptive gate drive method for maximum efficiency at any load.

The TEA1995T is a dedicated controller IC for synchronous rectification on the secondary side of resonant converters. It has two driver stages for driving the SR MOSFETs, which rectify the outputs of the central tap secondary transformer windings. The two gate driver stages have their own sensing inputs and operate independently.

The TEA1995T can also be used in multi-output flyback converters with the SR MOSFET placed at the low side.

The TEA1995T is fabricated in a Silicon-On-Insulator (SOI) process.

2 Features and benefits

2.1 Efficiency features

• Adaptive gate drive for maximum efficiency at any load

• Supply current in energy save operation below 200 μA

2.2 Application features

• Wide supply voltage range from 4.5 V to 38 V

• Dual synchronous rectification for LLC resonant in SO8 package

• Synchronous rectification for multi-output flyback converters

• Supports 5 V operation with logic level SR MOSFETs

• Differential inputs for sensing the drain and source voltages of each SR MOSFET

2.3 Control features

• SR control without minimum on-time

• Adaptive gate drive for fast turn-off at the end of conduction

• UnderVoltage LockOut (UVLO) protection with active gate pull-down

NXP Semiconductors

GreenChip dual synchronous rectifier controller

TEA1995T

3 Applications

The TEA1995T is intended for resonant power supplies. In such applications, it can drive two external synchronous rectifier MOSFETs for the rectification of the voltages on the two secondary windings of the transformer. These MOSFETs replace diodes. It can be used in all power supplies requiring high efficiency:

• Adapters

• Power supplies for desktop PC and all-in-one PC

• Power supplies for television

• Power supplies for servers

4 Ordering information

Table 1. Ordering information

Type number Package

Name Description Version

TEA1995T/1 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

5 Marking

Table 2. Marking

Type number Marking code

TEA1995T/1 TEA1995

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aaa-016986

V AND I

REFERENCE

5 V

REGULATOR

DRIVER SUPPLY

11 V

enable

UNDER VOLTAGE LOCKOUT

ENERGY SAVE

CONTROL

TURN ON

off regulation

on regulation

turn-on

DSA

SSA

DSB

SSB

GDA

VCC

SWITCH OFF

+150 mV-50 mV-55 mV-400 mV

LOGICIC

TURN ON

off regulation

on regulation

turn-on

GDB

GND

SWITCH OFF

+150 mV-50 mV-55 mV-400 mV

6 Block diagram

TEA1995T

GreenChip dual synchronous rectifier controller

Figure 1. TEA1995T block diagram

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GDB GDA

GND V

DSB DSA

SSB SSA

aaa-016990

7 Pinning information

7.1 Pinning

Figure 2. TEA1995T pin configuration

7.2 Pin description

Table 3. Pin description

Symbol Pin Description

GDB 1 gate drive output MOSFET B

GND 2 ground

DSB 3 drain sense input for synchronous timing MOSFET B

SSB 4 source sense input MOSFET B

SSA 5 source sense input MOSFET A

DSA 6 drain sense input for synchronous timing MOSFET A

GDA 8 gate drive output MOSFET A

TEA1995T

GreenChip dual synchronous rectifier controller

7 supply voltage

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aaa-016991

DSA

GDA

SSA

DSB

GDB

SSB

GND

prim1

prim2

sec1

PRIMARY

SIDE

CONTROLLER

out

IC1

sec2

out

8 Functional description

8.1 Introduction

The TEA1995T is a controller IC for synchronous rectification. It is perfectly suited to be used in resonant applications. It can drive two synchronous rectifier MOSFETs on the secondary side of the central tap transformer winding. Figure 3 shows a typical configuration.

TEA1995T

GreenChip dual synchronous rectifier controller

Figure 3. TEA1995T typical configuration

8.2 Start-up and undervoltage lockout (VCC pin)

When the voltage on the VCC pin exceeds V activates the SR circuitry. When the voltage drops to below V UVLO state. The SR MOSFET gate driver outputs are actively kept low. For proper operation, the VCC pin must be decoupled with an extra capacitor (not only with C between the VCC pin and the GND pin. To reduce inductance effects because of high gate driver currents, the extra capacitor must be connected as close as possible to the IC.

start

8.3 Drain sense (DSA and DSB pins)

The drain sense pins are input pins capable of handling input voltages up to 100 V. At positive drain sense voltages, the gate driver is in off-mode with pulled-down gate driver pins (pins GDA or GDB). At negative drain sense voltages, the IC enables the SR through sensing the drain source differential voltage.

, the IC leaves the UVLO state and

, the IC reenters the

stop

out

)

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8.4 Synchronous Rectification (SR; DSA, SSA, DSB, and SSB pins)

The IC senses the voltage difference between the drain sense (pins DSA and DSB) and the source sense (pins SSA and SSB) connections. The drain source differential voltage of the SR MOSFET is used to drive the gate of the SR MOSFET.

TEA1995T

GreenChip dual synchronous rectifier controller

When this absolute voltage difference is higher than V

, the corresponding gate

act(drv)

driver output turns on the external SR MOSFET. When the external SR MOSFET is switched on, the absolute voltage difference between the drain and the source sense connections drops to below V

. The regulation phase follows the turn-on phase.

act(drv)

In the regulation phase, the IC regulates the difference between the drain and the source sense inputs to an absolute level (V V until the V

, the gate driver output increases the gate voltage of the external SR MOSFET

reg(drv)

level is reached. The SR MOSFET does not switch off at low currents.

reg(drv)

). When the absolute difference is higher than

reg(drv)

The IC operates without minimum on-time.

When the absolute difference is lower than V

deact(drv)

, the gate driver output decreases the gate voltage of the external SR MOSFET. The voltage waveform on the gate of the SR MOSFET follows the waveform of the current through the SR MOSFET. When the current through the external SR MOSFET reaches zero, the SR MOSFET is quickly switched off.

After the SR MOSFET switch-off, the drain voltage increases. For a drain voltage above V

, a low ohmic gate pull-down of R

swoff

keeps the gate of the SR MOSFET switched

pd(G)

off.

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aaa-018615

0 V

0 A

threshold

SR switch

low current

high current

secondary

current

drain sense-

source sense

voltage

gate

driver

act(drv)

d(act)(drv)

reg(drv)

TEA1995T

GreenChip dual synchronous rectifier controller

Figure 4. Synchronous rectification signals

8.5 Gate driver (GDA and GDB pins)

The gate driver circuit charges the gate of the external SR MOSFET during the rising part of the current. The driver circuit discharges the gate during the falling part of the current. The gate driver has a source capability of typically I I

. The source and sink capability allow a fast turn-on and a fast turn-off of the external

sink

SR MOSFET.

The maximum driver output voltage is limited to V all MOSFET brands to the minimum on-state resistance.

G(max)

In applications where the IC is supplied with 5 V, the maximum output voltage of the driver is limited to 5 V. Logic level SR MOSFETs can be used.

During start-up conditions (VCC < V

) and UVLO, the driver output voltage is actively

start

pulled low.

and a sink capability of typically

source

. This high output voltage drives

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8.6 Source sense connection (SSA and SSB pins)

The IC is equipped with additional source sense pins (SSA and SSB). These pins are used for the measurement of the SR MOSFET drain-to-source voltage. The source sense input must be connected as close as possible to the source pin of the external SR MOSFET. It minimizes errors caused by voltage difference on PCB tracks because of parasitic inductance in combination with large dI/dt values.

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GreenChip dual synchronous rectifier controller

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9 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Voltages

sense(D)A

sense(D)B

sense(S)A

sense(S)B

GDA

GDB

General

tot

max

stg

ElectroStatic Discharge (ESD)

ESD

TEA1995T

GreenChip dual synchronous rectifier controller

supply voltage −0.4 +38 V

drain sense voltage A DC −0.8 +100 V

drain sense voltage B DC −0.8 +100 V

source sense voltage A DC −0.4 +0.4 V

source sense voltage B DC −0.4 +0.4 V

voltage on pin GDA DC

voltage on pin GDB DC

total power dissipation - 0.5 W

maximum frequency if not limited by P

tot

storage temperature −55 +150 °C

junction temperature −40 +150 °C

electrostatic discharge

Human Body Model (HBM)

voltage

Charged Device Model (CDM)

[1]

−0.4 +13.0 V

[1]

−0.4 +13.0 V

- 500 kHz

[2]

- 2000 V

[3]

- 500 V

[1] [1] These pins are output pins that are forced by the IC (see Table 6) [2] [2] Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. [3] [3] Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor.

10 Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

th(j-c)

Product data sheet Rev. 3 — 5 December 2017

thermal resistance from junction to ambient

thermal resistance from junction to case

JEDEC test board 140 K/W

JEDEC test board 90 K/W

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NXP Semiconductors

TEA1995T

GreenChip dual synchronous rectifier controller

11 Characteristics

Table 6. Characteristics

= 25 °C; VCC = 12 V; C

amb

GDA/CGDB

voltages are measured with respect to ground (pin 2). Currents are positive when flowing into the IC, unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Supply voltage management (pin VCC)

start

stop

CC(oper)

act(es)

start voltage 4.35 4.55 4.75 V

stop voltage 4.0 4.2 4.4 V

operating supply current

energy save mode activation time 85 110 135 μs

Synchronous rectification sense input (pins DSA, SSA, DSB, and SSB)

act(drv)

reg(drv)

swoff

d(act)(drv)

d(deact)(drv)

driver activation voltage V

driver regulation voltage V

switch-off voltage V

driver activation delay time V

driver deactivation delay time V

Gate driver (pins GDA and GDB)

source

sink

pd(G)

source current

sink current

gate pull-down resistance in off-state; V

= 10 nF (capacitors between GDA and GND and between GDB and GND). All

energy-save 140 160 180 μAI

normal operation (without gate

0.9 1.1 1.3 mA

charge)

sense(S)A/Vsense(S)B

= 0 V −450 −400 −350 mV

= 0 V −60 −55 −50 mV

= 0 V 90 150 200 mV

= 0 V;

- 80 - ns normal operation; time from step on V

−0.5 V) to rising of V

DSA/VDSB

GDA/VGDB

(2 V to

at 10 %

of end value

sense(S)A/Vsense(S)B

= 0 V;

- 40 - ns normal operation; time from step on V to 2 V) to falling of V

DSA/VDSB

GDA/VGDB

(−0.5 V

at 90 %

of begin value

peak current at

- −0.4 - AI VCC = 5 V;VDS = −0.5 V; VG = 0 V

peak current at

- −1.0 - A VCC = 12 V;VDS = −0.5 V; VG = 0 V

regulation current at

- 90 - mA VCC = 5 V;VDS = 0 V; VG = 5 V

regulation current at

- 100 - mA VCC = 12 V;VDS = 0 V; VG = 10 V

peak current at VCC = 5 V;

- 0.6 - A VDS = 4 V;VG = 4 V

peak current at VCC = 12 V;VDS = 4 V;

- 1.0 - A VG = 4 V

= 30 mA; VCC = 12 V

GDB

DSA/VDSB

= 4 V; I

GDA

3.2 4 5 Ω

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NXP Semiconductors

aaa-016991

DSA

GDA

SSA

DSB

GDB

SSB

GND

prim1

prim2

sec1

PRIMARY

SIDE

CONTROLLER

out

IC1

sec2

out

TEA1995T

GreenChip dual synchronous rectifier controller

Symbol Parameter Conditions Min Typ Max Unit

G(max)

maximum gate voltage

GDA/VGDB

at VCC = 5 V 4.9 4.95 5.0 V

at VCC = 12 V 10.5 10.75 11.0 V

at VCC = 15 V to 38 V 11 12 13 V

12 Application information

A resonant switched mode power supply with the TEA1995T consists of a primary side half-bridge, a transformer, a resonant capacitor, and an output stage. To obtain low conduction loss rectification, SR MOSFETs are used in the output stage. The TEA1995T controls these SR MOSFETs.

The gate drive voltage for the SR switch is derived from the voltage difference between the corresponding drain sense and source sense pins.

Special attention must be paid to the connection of the drain sense and source sense pins. The voltages measured on these pins are used for gate drive voltage. Wrong measurement results in a less efficient gate drive because the gate voltage is either too low or too high. The connections to these pins must not interfere with the power wiring. The power wiring conducts currents with high dI/dt values. It can easily cause measurement errors resulting from induced voltages due to parasitic inductances. The separate source-sense pins enable the direct sensing of the source voltage of the external MOSFETs. Using the current carrying power ground tracks is not allowed.

12.1 Application diagram resonant application

Figure 5. Typical resonant application with TEA1995T

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aaa-016995

DSA

GDA

SSA

DSB

GDB

SSB

GND

prim

sec1

PRIMARY

SIDE

CONTROLLER

out1

out2

IC1

sec2

out1

out2

12.2 Application diagram multi-output flyback application

Figure 6. Multi-output flyback application with TEA1995T

TEA1995T

GreenChip dual synchronous rectifier controller

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NXP Semiconductors

UNIT

max.

A1A2A

c D

(1)E(2)

(1)

e H

L L

Q Zywv θ

REFERENCES

OUTLINE VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8

1.27

6.2

5.8

1.05

0.7

0.6

0.7

0.3

8 0

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

w M

detail X

v M

(A )

pin 1 index

076E03 MS-012

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15

0.05

0.244

0.228

0.028

0.024

0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

99-12-27 03-02-18

13 Package outline

TEA1995T

GreenChip dual synchronous rectifier controller

Figure 7. Package outline SOT96-1 (SO8)

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NXP Semiconductors

14 Abbreviations

Table 7. Abbreviations

Acronym Description

CDM Charged Device Model

ESD ElectroStatic Discharge

HBM Human Body Model

MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor

SOI Silicon-On-Insulator

SR Synchronous Rectification

UVLO UnderVoltage LockOut

TEA1995T

GreenChip dual synchronous rectifier controller

Product data sheet Rev. 3 — 5 December 2017

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GreenChip dual synchronous rectifier controller

TEA1995T

15 Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

TEA1995T v.3 20171205 Product data sheet - TEA1995T v.2

Modifications: • Section 10 "Thermal characteristics" has been updated.

TEA1995T v.2 20161130 Product data sheet - TEA1995T v.1

TEA1995T v.1 20150730 Product data sheet - -

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NXP Semiconductors

16 Legal information

16.1 Data sheet status

TEA1995T

GreenChip dual synchronous rectifier controller

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple

devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

16.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

[3]

Definition

development.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Product data sheet Rev. 3 — 5 December 2017

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NXP Semiconductors

TEA1995T

GreenChip dual synchronous rectifier controller

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own

risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

16.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

GreenChip — is a trademark of NXP B.V.

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NXP Semiconductors

1 General description ............................................ 1

2 Features and benefits ......................................... 1

2.1 Efficiency features ............................................. 1

2.2 Application features ........................................... 1

2.3 Control features ................................................. 1

3 Applications .........................................................2

4 Ordering information .......................................... 2

5 Marking .................................................................2

6 Block diagram ..................................................... 3

7 Pinning information ............................................ 4

7.1 Pinning ...............................................................4

7.2 Pin description ................................................... 4

8 Functional description ........................................5

8.1 Introduction ........................................................ 5

8.2 Start-up and undervoltage lockout (VCC pin) .... 5

8.3 Drain sense (DSA and DSB pins) ..................... 5

8.4 Synchronous Rectification (SR; DSA, SSA,

DSB, and SSB pins) ..........................................6

8.5 Gate driver (GDA and GDB pins) ......................7

8.6 Source sense connection (SSA and SSB

pins) ................................................................... 8

9 Limiting values .................................................... 9

10 Thermal characteristics ......................................9

11 Characteristics .................................................. 10

12 Application information ....................................11

12.1 Application diagram resonant application ........ 11

12.2 Application diagram multi-output flyback

application ........................................................12

13 Package outline .................................................13

14 Abbreviations .................................................... 14

15 Revision history ................................................ 15

16 Legal information .............................................. 16

TEA1995T

GreenChip dual synchronous rectifier controller

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 December 2017

Document identifier: TEA1995T

NXP Semiconductors TEA1995T DATA SHEET

Specifications and Main Features

Frequently Asked Questions

User Manual

1 General description

2 Features and benefits

2.1 Efficiency features

2.2 Application features

2.3 Control features

3 Applications

4 Ordering information

5 Marking

6 Block diagram

7 Pinning information

7.1 Pinning

7.2 Pin description

8 Functional description

8.1 Introduction

8.2 Start-up and undervoltage lockout (VCC pin)

8.3 Drain sense (DSA and DSB pins)

8.4 Synchronous Rectification (SR; DSA, SSA, DSB, and SSB pins)

8.5 Gate driver (GDA and GDB pins)

8.6 Source sense connection (SSA and SSB pins)

9 Limiting values

10 Thermal characteristics

11 Characteristics

12 Application information

12.1 Application diagram resonant application

12.2 Application diagram multi-output flyback application

13 Package outline

14 Abbreviations

15 Revision history

16 Legal information

Contents