NXP Semiconductors SA58670A User Manual

SA58670A

2.1 W/channel stereo class-D audio amplifier

Rev. 02 — 23 October 2008 Product data sheet

1. General description

The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).

The SA58670A features independent shutdown controls for each channel. The gain may
be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity
to noise and RF rectification is increased by high PSRR and differential circuit topology.
Fast start-up time and small package makes it an ideal choice for both cellular handsets
and PDAs.

The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 Ω. It
delivers 2.1 W/channel at 5.0 V into 4 Ω. The maximum power efficiency is excellent at
70 % to 74 % into 4 Ω and 84 % to 88 % into 8 Ω. The SA58670A provides thermal and
short-circuit shutdown protection.

2. Features

n Output power:

n Supply voltage: 2.5 V to 5.5 V
n Independent shutdown control for each channel
n Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB
n High SVRR: −77 dB at 217 Hz
n Fast start-up time: 3.5 ms
n Low supply current
n Low shutdown current
n Short-circuit and thermal protection
n Space savings with 4 mm × 4 mm HVQFN20 package
n Low junction to ambient thermal resistance of 24 K/W with exposed DAP

3. Applications

n Wireless and cellular handset and PDA
n Portable DVD player
n USB speaker
n Notebook PC
n Portable radio and gaming

u 2.1 W/channel into 4 Ω at 5.0 V
u 1.4 W/channel into 8 Ω at 5.0 V
u 720 mW/channel into 8 Ω at 3.6 V

NXP Semiconductors

n Educational toy

4. Ordering information

Table 1. Ordering information

Type number Package

SA58670ABS HVQFN20 plastic thermal enhanced very thin quad flat package;

5. Block diagram

SA58670A

2.1 W/channel stereo class-D audio amplifier

Name Description Version

SOT917-1

no leads; 20 terminals; body 4 × 4 × 0.85 mm

right input

left input

INRP
INRN

n.c.

INLP

INLN

G0
G1

SDR

SDL

Refer to Table 6 for gain selection.

Fig 1. Block diagram

SA58670A

16
17

6, 10

20
19

15
1
8

300 kΩ

7

300 kΩ

GAIN

ADJUST

GAIN

ADJUST

BIAS

CIRCUITRY

PWM

INTERNAL

OSCILLATOR

PWM

SHORT-CIRCUIT

PROTECTION

H-

BRIDGE

H-

BRIDGE

3, 13 PVDD

1411OUTRP

GND

2
5

9 AVDD

4, 12

18

002aad663

OUTRN

OUTLP
OUTLN

PGND
AGND

V

DD

V

DD

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 2 of 24

NXP Semiconductors

6. Pinning information

6.1 Pinning

SA58670A

2.1 W/channel stereo class-D audio amplifier

terminal 1

index area

G1 G0

OUTLP OUTRP

PVDD PVDD

PGND

OUTLN

(1) Exposed Die Attach Paddle (DAP).

INLP

INLN

AGND

INRN

2019181716

115
214
313

SA58670ABS

412

(1)

DAP

511

6

7

8

9

n.c.

SDL

SDR

Transparent top view

AVDD

Fig 2. Pin configuration for HVQFN20

6.2 Pin description

Table 2. Pin description

Symbol Pin Description

G1 1 gain select input 1
OUTLP 2 left channel positive output
PVDD 3 power supply voltage (level same as AVDD)
PGND 4 power ground
OUTLN 5 left channel negative output
n.c. 6 not connected
SDL 7 left channel shutdown input (active LOW)
SDR 8 right channel shutdown input (active LOW)
AVDD 9 analog supply voltage (level same as PVDD)
n.c. 10 not connected
OUTRN 11 right channel negative output
PGND 12 power ground
PVDD 13 power supply voltage (level same as AVDD)
OUTRP 14 right channel positive output
G0 15 gain select input 0
INRP 16 right channel positive input
INRN 17 right channel negative input
AGND 18 analog ground

INRP

10

n.c.

PGND
OUTRN

002aad664

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 3 of 24

NXP Semiconductors

SA58670A

2.1 W/channel stereo class-D audio amplifier

Table 2. Pin description

Symbol Pin Description

INLN 19 left channel negative input
INLP 20 left channel positive input

- (DAP) exposed die attach paddle; connect to ground plane heat spreader

7. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DD

V

I

P power dissipation derating factor 41.6 mW/K

T

amb

T

j

T

stg

V

esd

…continued

[1]

supply voltage Active mode −0.3 +6.0 V

Shutdown mode −0.3 +7.0 V

input voltage pin SDL GND V

SDR GND V

pin
other pins −0.3 V

=25°C - 5.2 W

T

amb

=75°C - 3.12 W

T

amb

=85°C - 2.7 W

T

amb

DD
DD
DD

V
V

+ 0.3 V

ambient temperature operating in free air −40 +85 °C
junction temperature operating −40 +150 °C
storage temperature −65 +85 °C
electrostatic discharge

voltage

human body model ±2000 - V
machine model ±200 - V

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

GND is the voltage ground on pins PGND and pin AGND.

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 4 of 24

NXP Semiconductors

8. Static characteristics

SA58670A

2.1 W/channel stereo class-D audio amplifier

Table 4. Static characteristics

T

=25°C; unless otherwise specified

amb

[1]

.

Symbol Parameter Conditions Min Typ Max Unit

V

DD

I

DD

I

DD(sd)

PSRR power supply rejection ratio V
V

i(cm)

CMRR common mode rejection ratio inputs are shorted together;

V

IH

V

IL

I

IH

I

IL

f

sw

G

v(cl)

supply voltage operating 2.5 - 5.5 V
supply current VDD= 2.5 V; no load - 4 6 mA

= 3.6 V; no load - 5 7.5 mA

V

DD

= 5.5 V; no load - 6 9 mA

V

DD

shutdown mode supply current no input signal;

V

SDR=VSDL

= 2.5 V to 5.5 V - −75 −55 dB

DD

= GND

- 10 1000 nA

common-mode input voltage 0.5 - VDD− 0.8 V

- −69 −50 dB

= 2.5 V to 5.5 V

V

DD

HIGH-level input voltage VDD= 2.5 V to 5.5 V;

pins

SDL, SDR, G0, G1

LOW-level input voltage VDD= 2.5 V to 5.5 V;

pins

SDL, SDR, G0, G1

HIGH-level input current VDD= 5.5 V; VI=V

DD

1.3 - V

DD

0 - 0.35 V

--50 µA

V

LOW-level input current VDD= 5.5 V; VI=0V --5 µA
switching frequency VDD= 2.5 V to 5.5 V 250 300 350 kHz
closed-loop voltage gain VG0 = VG1 = 0.35 V 5.5 6 6.5 dB

= VDD; VG1 = 0.35 V 11.5 12 12.5 dB

V

G0

= 0.35 V; VG1 = V

V

G0

= VG1 = V

V

G0

DD

DD

17.5 18 18.5 dB

23.5 24 24.5 dB

Pins OUTLP, OUTLN, OUTRP and OUTRN

R

DSon

|V

O(offset)

Z

o(sd)

drain-source on-state resistance VDD= 2.5 V - 700 - mΩ

= 3.6 V - 570 - mΩ

V

DD

= 5.5 V - 500 - mΩ

V

DD

| output offset voltage measureddifferentially;inputs

shutdown mode output impedance V

AC grounded; G
V

= 2.5 V to 5.5 V

DD

= V

SDR

= 0.35 V - 2 - kΩ

SDL

v(cl)

= 6 dB;

- 5 10 mV

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

GND is the ground supply voltage on pins PGND and pin AGND.

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 5 of 24

NXP Semiconductors

9. Dynamic characteristics

SA58670A

2.1 W/channel stereo class-D audio amplifier

Table 5. Dynamic characteristics

T

=25°C; RL=8Ω; unless otherwise specified

amb

[1]

.

Symbol Parameter Conditions Min Typ Max Unit

P

o

THD+N total harmonic

SVRR supply voltage ripple

CMRR common mode rejection

output power per channel; f = 1 kHz; THD+N = 10 %

=8Ω; VDD= 3.6 V - 0.72 - W

R

L

=8Ω; VDD= 5.0 V - 1.4 - W

R

L

=4Ω; VDD= 5.0 V - 2.1 - W

R

L

distortion-plus-noise

rejection

= 5.0 V; G

V

DD

= 0.5 W - 0.11 - %

P

o

= 1.0 W - 0.14 - %

P

o

= 6 dB; f = 217 Hz

G

v(cl)

= 3.6 V - −73 - dB

V

DD

= 5.0 V - −77 - dB

V

DD

= 5.0 V; G

V

DD

= 6 dB; f=1kHz

v(cl)

= 6 dB; f = 217 Hz - −69 - dB

v(cl)

ratio

Z

i

t

d(sd-startup)

input impedance G

delay time from

= 6 dB - 28.1 - kΩ

v(cl)

= 12 dB - 17.3 - kΩ

G

v(cl)

= 18 dB - 9.8 - kΩ

G

v(cl)

= 24 dB - 5.2 - kΩ

G

v(cl)

VDD= 3.6 V - 3.5 - ms

shutdown to start-up

V

n(o)

output noise voltage VDD= 3.6 V; f = 20 Hz to 20 kHz;

inputs are AC grounded

no weighting - 35 - µV
A weighting - 27 - µV

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 6 of 24

NXP Semiconductors

10. Typical performance curves

SA58670A

2.1 W/channel stereo class-D audio amplifier

10

THD+N

(%)

10

10

a. G

10

THD+N

(%)

10

10

−1

−2

10

−1

2

1

10

v(cl)

2

1

−5

=24dB

001aah484

(1)

(2) (3)

−4

10

−3

10

−2

10

−1

(1)

(2) (3)

Po (W)

10110

001aah485

−2

10

b. G

10

−5

v(cl)

= 6 dB.

−4

10

−3

10

−2

10

−1

Po (W)

10110

fi= 1 kHz.
(1) VDD= 2.5 V.
(2) VDD= 3.6 V.
(3) VDD= 5.0 V.

Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL=8Ω

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 7 of 24

NXP Semiconductors

SA58670A

2.1 W/channel stereo class-D audio amplifier

10

THD+N

(%)

10

10

a. G

10

THD+N

(%)

10

2

10

1

−1

−2

10

2

10

1

−1

−5

v(cl)

=24dB.

001aah486

(1)

(2) (3)

−4

10

−3

10

−2

10

−1

(1)

Po (W)

(2) (3)

10110

001aah487

−2

10

b. G

10

−5

v(cl)

= 6 dB.

−4

10

−3

10

−2

10

−1

Po (W)

10110

fi= 1 kHz.
(1) VDD= 2.5 V.
(2) VDD= 3.6 V.
(3) VDD= 5.0 V.

Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL=4Ω

SA58670A_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 23 October 2008 8 of 24